The Blue Emission at 2.8 EV in Strontium Titanate: Evidence for a Radiative Transition of Self-Trapped Excitons from Unbound States

The origin of the blue emission in SrTiO3 has been investigated as a function of irradiation fluence, electronic excitation density, and temperature using a range of ion energies and masses. The emission clearly does not show correlation with the concentration of vacancies generated by irradiation but is greatly enhanced under heavy-ion irradiation. The intensity ratio of the 2.8 and 2.5 eV bands is independent of fluence at all temperatures, but it increases with excitation rate. The 2.8 eV emission is proposed to correspond to a transition from conduction band states to the ground state level of the self-trapped exciton center

Recent Advances on Carrier and Exciton Self-Trapping in Strontium Titanate: Understanding the Luminescence Emissions

An up-to-date review on recent results for self-trapping of free electrons and holes, as well as excitons, in strontium titanate (STO), which gives rise to small polarons and self-trapped excitons (STEs) is presented. Special attention is paid to the role of carrier and exciton self-trapping on the luminescence emissions under a variety of excitation sources with special emphasis on experiments with laser pulses and energetic ion-beams. In spite of the extensive research effort, a definitive identification of such localized states, as well as a suitable understanding of their operative light emission mechanisms, has remained lacking or controversial. However, promising advances have been recently achieved and are the objective of the present review. In particular, significant theoretical advances in the understanding of electron and hole self-trapping are discussed. Also, relevant experimental advances in the kinetics of light emission associated with electron-hole recombination have been obtained through time-resolved experiments using picosecond (ps) laser pulses. The luminescence emission mechanisms and the light decay processes from the self-trapped excitons are also reviewed. Recent results suggest that the blue emission at 2.8 eV, often associated with oxygen vacancies, is related to a transition from unbound conduction levels to the ground singlet state of the STE. The stabilization of small electron polarons by oxygen vacancies and its connection with luminescence emission are discussed in detail. Through ion-beam irradiation experiments, it has recently been established that the electrons associated with the vacancy constitute electron polaron states (Ti3+) trapped in the close vicinity of the empty oxygen sites. These experimental results have allowed for the optical identification of the oxygen vacancy center through a red luminescence emission centered at 2.0 eV. Ab-initio calculations have provided strong support for those experimental findings. Finally, the use of Cr-doped STO has offered a way to monitor the interplay between the chromium centers and oxygen vacancies as trapping sites for the electron and hole partners resulting from the electronic excitation

Ion Beam irradiation of copper nitride: electronic vs elastic-collision mechanism

Copper nitride is a metastable material which results very attractive because of their potential to be used in functional device. Cu3 N easily decomposes into Cu and N2 by annealing [1] or irradiation (electron, ions, laser) [2, 3]. Previous studies carried out in N-rich Cu3 N films irradiated with Cu at 42MeV evidence a very efficient sputtering of N whose yield (5×10 3 atom/ion), for a film with a thickness of just 100 nm, suggest that the origin of the sputtering has an electronic nature. This N depletion was observed to be responsible for new phase formation ( Cu2 O) and pure Cu [4

Ionoluminescence on α-quartz: mechanisms and modeling

Ionoluminescence of α - quartz exhibits two dominant emission bands peaking at 1.9 eV. (NBOHCs) and 2.7 eV (STEs. The evolution of the red emission yield does not show a correlation with the concentrations of neither the NBOHC nor with that of other color centers. The blue emission yield closely follows the amorphization kinetics independently measured by RBS/C spectrometry. A simple theoretical model has been proposed; it assumes that the formation and recombination of STEs are the primary event and both, the light emissions and the lattice structural damage are a consequence this phenomenon. The model leads to several simple mathematical equations that can be used to simulate the IL yields and provide a reasonable fit to experimental kinetic data

Refractive index changes in amorphous SiO2 (silica) by swift ion irradiation

The refractive index changes induced by swift ion-beam irradiation in silica have been measured either by spectroscopic ellipsometry or through the effective indices of the optical modes propagating through the irradiated structure. The optical response has been analyzed by considering an effective homogeneous medium to simulate the nanostructured irradiated system consisting of cylindrical tracks, associated to the ion impacts, embedded into a virgin material. The role of both, irradiation fluence and stopping power, has been investigated. Above a certain electronic stopping power threshold (∼2.5 keV/nm), every ion impact creates an axial region around the trajectory with a fixed refractive index (around n = 1.475) corresponding to a certain structural phase that is independent of stopping power. The results have been compared with previous data measured by means of infrared spectroscopy and small-angle X-ray scattering; possible mechanisms and theoretical models are discussed

Amorphization kinectics under swift heavy ion irradiation: a cumulative overlapping-track approach

A simple illustrative physical model is presented to describe the kinetics of damage and amorphization by swiftheavyions (SHI) in LiNbO3. The model considers that every ion impact generates initially a defective region (halo) and a full amorphous core whose relative size depends on the electronic stopping power. Below a given stopping power threshold only a halo is generated. For increasing fluences the amorphized area grows monotonically via overlapping of a fixed number N of halos. In spite of its simplicity the model, which provides analytical solutions, describes many relevant features of the kinetic behaviour. In particular, it predicts approximate Avrami curves with parameters depending on stopping power in qualitative accordance with experiment that turn into Poisson laws well above the threshold valu

On the exciton model for ion-beam damage: The example of TiO2

The non-radiative exciton decay model recently developed to account for swift-ion-beam damage to LiNbO3 is, here, discussed within a general physical perspective, taking previous work on alkali halides as a reference. Some general rules for the validity of excitonic models have been put forward, allowing one to predict the irradiation behaviour of other materials. As a new example of application, some preliminary data on the generation and growth of uniform amorphous layers induced by irradiation with Br at 13 MeV and 25 MeV have been performed on rutile (TiO2). In addition sub-threshold irradiations with Br ions at 9 MeV have been carried out. Defects generation is observed as a result. This effect is explained with the exciton model. Experiments are in the electronic excitation regime and use moderate fluences in the range of 6 × 1012 to 1.5 × 1014 cm−2. The results show similar features to those found for LiNbO3 and are, in principle, consistent with a non-radiative exciton decay model

Comparative study of ion beam-irradiation effects on silica and α-quartz: evidences for excitonic mechanisms

Introduction - SiO 2 •Simple composition and structure; Crystalline and amorphous phases •Adequate for atomistic simulations •Abundant in nature. Relevant for many technologies -Irradiation with swift heavy ions: •They provide EXTREME physical conditions •Very high excitation densities similar to high power lasers •Very high local temperatures •By playing with high energy and heavy mass (SHI) : •One can go from low electronic excitations (collisions regime) to high electronic excitations (electronic regim

Kinetics of amorphization induced by swift heavy ions in α-quartz

The kinetics of amorphization in crystalline SiO2 (α-quartz) under irradiation with swift heavy ions (O+1 at 4 MeV, O+4 at 13 MeV, F+2 at 5 MeV, F+4 at 15 MeV, Cl+3 at 10 MeV, Cl+4 at 20 MeV, Br+5 at 15 and 25 MeV and Br+8 at 40 MeV) has been analyzed in this work with an Avrami-type law and also with a recently developed cumulative approach (track-overlap model). This latter model assumes a track morphology consisting of an amorphous core (area σ) and a surrounding defective halo (area h), both being axially symmetric. The parameters of the two approaches which provide the best fit to the experimental data have been obtained as a function of the electronic stopping power Se. The extrapolation of the σ(Se) dependence yields a threshold value for amorphization, Sth ≈ 2.1 keV/nm; a second threshold is also observed around 4.1 keV/nm. We believe that this double-threshold effect could be related to the appearance of discontinuous tracks in the region between 2.1 and 4.1 keV/nm. For stopping power values around or below the lower threshold, where the ratio h/σ is large, the track-overlap model provides a much better fit than the Avrami function. Therefore, the data show that a right modeling of the amorphization kinetics needs to take into account the contribution of the defective track halo. Finally, a short comparative discussion with the kinetic laws obtained for elastic collision damage is given

Compositional, structural and morphological modifications of N-rich Cu3N films induced by irradiation with Cu at 42 MeV

N-rich Cu3N films were irradiated with Cu at 42 MeV in the fluences range from 4 × 1011 to 1 × 1014 cm−2. The radiation-induced changes in the chemical composition, structural phases, surface morphology and optical properties have been characterized as a function of ion fluence, substrate temperature and angle of incidence of the incoming ion by means of ion-beam analysis (IBA), x-ray diffraction, atomic force microscopy, profilometry and Fourier transform infrared spectroscopy techniques. IBA methods reveal a very efficient sputtering of N whose yield (5 × 103 atom/ion) is almost independent of substrate temperature (RT-300 °C) but slightly depends on the incidence angle of the incoming ion. The Cu content remains essentially constant within the investigated fluence range. All data suggest an electronic mechanism to be responsible for the N depletion. The release of nitrogen and the formation of Cu2O and metallic Cu are discussed on the basis of existing models