39 research outputs found
Strong improvement of the transport characteristics of YBaCuO grain boundaries using ionic liquid gating
For more than 30 years, the remarkable superconducting properties of
REBaCuO (RE = rare earth) compounds
have triggered research studies across the world. Accordingly, significant
progresses have been made both from a basic understanding and a fabrication
processes perspective. Yet, today, the major technological bottleneck towards
the spread of their practical uses remains the exponential decay of their
critical current with grain misorientation in polycrystalline samples. In this
work, we used an ionic liquid to apply extremely high transverse electric
fields to YBaCuO thin films containing
a single well-defined low-angle grain boundary. Our study shows that this
technique is very effective to tune the IV characteristics of these weak-links.
In-magnetic field measurements allow us to discuss the type of the vortices
present at the grain boundary and to unveil a large variation of the local
depairing current density with gating. Comparing our results with the ones
obtained on chemically-doped grain boundaries, we discuss routes to evaluate
the role of local strain in the loss of transparency at cuprates low-angle
grain boundaries. In short, this study offers a new opportunity to discuss
scenarios leading to the reduced transport capabilities of grain boundaries in
cuprates
Large modulation of the Shubnikov-de Haas oscillations by the Rashba interaction at the LaAlO/SrTiO interface
We investigate the 2-dimensional Fermi surface of high-mobility
LaAlO/SrTiO interfaces using Shubnikov-de Haas oscillations. Our
analysis of the oscillation pattern underscores the key role played by the
Rashba spin-orbit interaction brought about by the breaking of inversion
symmetry, as well as the dominant contribution of the heavy /
orbitals on electrical transport. We furthermore bring into light the complex
evolution of the oscillations with the carrier density, which is tuned by the
field effect
Magneto-transport study of top- and back-gated LaAlO/SrTiO heterostructures
We report a detailed analysis of magneto-transport properties of top- and
back-gated LaAlO/SrTiO heterostructures. Efficient modulation in
magneto-resistance, carrier density, and mobility of the two-dimensional
electron liquid present at the interface is achieved by sweeping top and back
gate voltages. Analyzing those changes with respect to the carrier density
tuning, we observe that the back gate strongly modifies the electron mobility
while the top gate mainly varies the carrier density. The evolution of the
spin-orbit interaction is also followed as a function of top and back gating.Comment: 15 pages, 6 figure
Growth-induced electron mobility enhancement at the LaAlO/SrTiO interface
We have studied the electronic properties of the 2D electron liquid present
at the LaAlO/SrTiO interface in series of samples prepared at different
growth temperatures. We observe that interfaces fabricated at 650{\deg}C
exhibit the highest low temperature mobility () and the lowest sheet carrier density (). These samples show metallic behavior and
Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at
higher temperatures (800-900{\deg}C) display carrier densities in the range of
and mobilities of at 4K. Reducing their carrier density by field
effect to lowers their mobilites to
bringing the conductance to the
weak-localization regime
Giant Oscillating Thermopower at Oxide Interfaces
Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is
one of the major open issues in the full comprehension of the charge
confinement phenomenon in oxide heterostructures. Here, we investigate
thermopower to study the electronic structure in LaAlO3/SrTiO3 at low
temperature as a function of gate field. In particular, under large negative
gate voltage, corresponding to the strongly depleted charge density regime,
thermopower displays record-high negative values of the order of 10^4 - 10^5
microV/K, oscillating at regular intervals as a function of the gate voltage.
The huge thermopower magnitude can be attributed to the phonon-drag
contribution, while the oscillations map the progressive depletion and the
Fermi level descent across a dense array of localized states lying at the
bottom of the Ti 3d conduction band. This study is the first direct evidence of
a localized Anderson tail in the two-dimensional (2D) electron liquid at the
LaAlO3/SrTiO3 interface.Comment: Main text: 28 pages and 3 figures; Supplementary information: 29
pages, 5 figures and 1 tabl
Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces
We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces
characterized by mobilities of the order of several thousands cm/Vs. We
observe Shubnikov-de Haas oscillations that indicate a two-dimensional
character of the Fermi surface. The frequency of the oscillations signals a
multiple sub-bands occupation in the quantum well or a multiple valley
configuration. From the temperature dependence of the oscillation amplitude we
extract an effective carrier mass \,. An electric field
applied in the back-gate geometry increases the mobility, the carrier density
and the oscillation frequency.Comment: 4 pages, 4 figure