224 research outputs found

    Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

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    We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transition between singlet and a triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin-based Bell inequalities.Comment: 7 pages, 6 figure

    Testing the Elliott-Yafet spin-relaxation mechanism in KC8; a model system of biased graphene

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    Temperature dependent electron spin resonance (ESR) measurements are reported on stage 1 potassium doped graphite, a model system of biased graphene. The ESR linewidth is nearly isotropic and although the g-factor has a sizeable anisotropy, its majority is shown to arise due to macroscopic magnetization. Albeit the homogeneous ESR linewidth shows an unusual, non-linear temperature dependence, it appears to be proportional to the resistivity which is a quadratic function of the temperature. These observations suggests the validity of the Elliott-Yafet relaxation mechanism in KC8 and allows to place KC8 on the empirical Beuneu-Monod plot among ordinary elemental metals.Comment: 6 pages, 4 figures, submitted to Phys. Rev.

    Observation of conduction electron spin resonance in boron doped diamond

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    We observe the electron spin resonance of conduction electrons in boron doped (6400 ppm) superconducting diamond (Tc =3.8 K). We clearly identify the benchmarks of conduction electron spin resonance (CESR): the nearly temperature independent ESR signal intensity and its magnitude which is in good agreement with that expected from the density of states through the Pauli spin-susceptibility. The temperature dependent CESR linewidth weakly increases with increasing temperature which can be understood in the framework of the Elliott-Yafet theory of spin-relaxation. An anomalous and yet unexplained relation is observed between the g-factor, CESR linewidth, and the resistivity using the empirical Elliott-Yafet relation.Comment: 10 pages, 11 figures, submitted to Phys. Rev.

    Processing second-order stochastic dominance models using cutting-plane representations

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    This is the post-print version of the Article. The official published version can be accessed from the links below. Copyright @ 2011 Springer-VerlagSecond-order stochastic dominance (SSD) is widely recognised as an important decision criterion in portfolio selection. Unfortunately, stochastic dominance models are known to be very demanding from a computational point of view. In this paper we consider two classes of models which use SSD as a choice criterion. The first, proposed by Dentcheva and Ruszczyński (J Bank Finance 30:433–451, 2006), uses a SSD constraint, which can be expressed as integrated chance constraints (ICCs). The second, proposed by Roman et al. (Math Program, Ser B 108:541–569, 2006) uses SSD through a multi-objective formulation with CVaR objectives. Cutting plane representations and algorithms were proposed by Klein Haneveld and Van der Vlerk (Comput Manage Sci 3:245–269, 2006) for ICCs, and by Künzi-Bay and Mayer (Comput Manage Sci 3:3–27, 2006) for CVaR minimization. These concepts are taken into consideration to propose representations and solution methods for the above class of SSD based models. We describe a cutting plane based solution algorithm and outline implementation details. A computational study is presented, which demonstrates the effectiveness and the scale-up properties of the solution algorithm, as applied to the SSD model of Roman et al. (Math Program, Ser B 108:541–569, 2006).This study was funded by OTKA, Hungarian National Fund for Scientific Research, project 47340; by Mobile Innovation Centre, Budapest University of Technology, project 2.2; Optirisk Systems, Uxbridge, UK and by BRIEF (Brunel University Research Innovation and Enterprise Fund)

    CVaR minimization by the SRA algorithm

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    Using the risk measure CV aR in �nancial analysis has become more and more popular recently. In this paper we apply CV aR for portfolio optimization. The problem is formulated as a two-stage stochastic programming model, and the SRA algorithm, a recently developed heuristic algorithm, is applied for minimizing CV aR

    Thermally assisted magnetization reversal in the presence of a spin-transfer torque

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    We propose a generalized stochastic Landau-Lifshitz equation and its corresponding Fokker-Planck equation for the magnetization dynamics in the presence of spin transfer torques. Since the spin transfer torque can pump a magnetic energy into the magnetic system, the equilibrium temperature of the magnetic system is ill-defined. We introduce an effective temperature based on a stationary solution of the Fokker-Planck equation. In the limit of high energy barriers, the law of thermal agitation is derived. We find that the N\'{e}el-Brown relaxation formula remains valid as long as we replace the temperature by an effective one that is linearly dependent of the spin torque. We carry out the numerical integration of the stochastic Landau-Lifshitz equation to support our theory. Our results agree with existing experimental data.Comment: 5 figure

    Prediction of Hydrate and Solvate Formation Using Statistical Models

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    Novel, knowledge based models for the prediction of hydrate and solvate formation are introduced, which require only the molecular formula as input. A data set of more than 19 000 organic, nonionic, and nonpolymeric molecules was extracted from the Cambridge Structural Database. Molecules that formed solvates were compared with those that did not using molecular descriptors and statistical methods, which allowed the identification of chemical properties that contribute to solvate formation. The study was conducted for five types of solvates: ethanol, methanol, dichloromethane, chloroform, and water solvates. The identified properties were all related to the size and branching of the molecules and to the hydrogen bonding ability of the molecules. The corresponding molecular descriptors were used to fit logistic regression models to predict the probability of any given molecule to form a solvate. The established models were able to predict the behavior of ∼80% of the data correctly using only two descriptors in the predictive model
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