5 research outputs found

    Semiconductor-Superlattice Frequency Mixer For Detection of Submillimeter Waves

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    We report on a GaAs/AlAs superlattice frequency mixer for detection of submillimeter waves. The mixer is based on the nonlinear miniband transport giving rise to domains excited under the action of a microwave field. We designed the mixer for broadband operation (300–600 GHz). For studying basic properties, we investigated the mixer as a harmonic mixer in 15th order to detect radiation at a radio frequency (RF) near 300 GHz using local oscillator (LO) radiation of a frequency near 20 GHz. We reached a noise equivalent power (NEP) of about 10 fW/Hz. We also show that the use of the superlattice mixer together with a superlattice frequency multiplier allows to realize a superlattice-based free-space transmission line for submillimeter waves

    X-ray characterization of an Esaki-Tsu superlattice and transport properties

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    We have studied, by x-ray scattering, structural parameters of a short-period GaAs/AlAs superlattice and related the parameters to electric transport properties. Our results, for a superlattice consisting of 100 periods of about ten GaAs and seven AlAs monolayers in turn, indicate that an interface roughness of about 0.3 nm (thickness of one monolayer) may be responsible for a remarkable reduction of the electron mobility for the transport along the superlattice axis

    Design of a Large Orbit Gyrotron with a Permanent Magnet System

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    The paper presents results of numerical analysis and outlines the computer-aided design of a novel high-harmonic gyrotron with a beam of electrons gyrating along axis-encircling trajectories. The electron beam is formed by a novel electron-optical system (EOS) based on an electron gun of diode type with thermionic cathode and gradual reversal of the magnetic field. The results of numerical simulations predict satisfactory performance of the EOS and appropriate beam quality parameters. The tube design allows one to install different cavities optimized for excitation of TE4,1 mode at the fourth harmonic of the cyclotron frequency or TE3,1 mode at the third one. The target parameters of the device are: frequency about 112 GHz; output power near 1 kW and efficiency of several percent
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