Diluted manganese on the bond-centered site in germanium

The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes

Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

We present an experimental lattice location study of Ga atoms in Ge after ion implantation at elevated temperature (250°C). Using extended x-rayabsorption fine structure (EXAFS) experiments and a dedicated sample preparation method, we have studied the lattice location of Ga atoms in Ge with a concentration ranging from 0.5 at. % down to 0.005 at. %. At Ga concentrations ≤0.05 at.%, all Ga dopants are substitutional directly after ion implantation, without the need for post-implantation thermal annealing. At higher Ga concentrations, a reduction in the EXAFS amplitude is observed, indicating that a fraction of the Ga atoms is located in a defective environment. The local strain induced by the Ga atoms in the Ge matrix is independent of the Ga concentration and extends only to the first nearest neighbor Ge shell, where a 1% contraction in bond length has been measured, in agreement with density functional theory calculations.We acknowledge the support from the Research Foundation Flanders, the epi-team from imec, the KU Leuven GOA 09/06 project, the IUAP program P6/42 and the Australian Research Council. S.C. acknowledges support from OCAS NV by an OCAS-endowed chair at Ghent University

Direct evidence for stability of tetrahedral interstitial Er in Si up to 900∘^{\circ}C

Conversion electron emission channeling from the isotope $^{167m}$Er (2.28 s), which is the decay product of radioactive $^{167}$Tm (9.25 d), offers a means of monitoring the lattice sites of Er in single crystals. We have used this method to determine the lattice location of $^{167m}$Er in Si directly following room temperature implantation of $^{167}$Tm, after subsequent annealing steps, and also in situ during annealing up to 900°C. Following the recovery of implantation damage around 600°C, about 90% of Er occupies near-tetrahedral interstitial sites in both FZ and CZ Si. While in FZ Si $^{167m}$Er was found to be stable on these sites even at 900°C, the tetrahedral Er fraction in CZ Si decreased considerably after annealing for 10 min at 800°C and above

Controlling the formation and stability of ultra-thin nickel silicides : an alloying strategy for preventing agglomeration

The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of t(c) = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 degrees C, thinner films form epitaxial NiSi2 films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of "thickness gradients," which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness t(c). The results are discussed in the framework of classical nucleation theory

Recent emission channeling studies in wide band gap semiconductors

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed

Optical energies of AllnN epilayers

Optical energy gaps are measured for high-quality Al1−xInxN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13<x<0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric fiel

Influence of O and C co-implantation on the lattice site of Er in GaN

The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope $^{167m}$Er give direct evidence that the majority (~90%) of Er atoms are located on substitutional Ga sites for all samples. Annealing up to 900 °C does not change these fractions, although it reduces the Er root-mean-square (rms) displacements. The only visible effect of oxygen or carbon doping is a small increase in the rms displacements with respect to the undoped sample

Position-sensitive Si pad detectors for electron emission channeling experiments

Position-sensitive detector systems, initially developed for the detection of X-rays, have been adapted for their use in electron emission channeling experiments. Each detection system consists of a 30.8x30.8 mm$^{2}$ 22x22 -pad Si detector, either of 0.3 mm, 0.5 mm or 1 mm thickness, four 128$-$channel preamplifier chips, a backplane trigger circuit, a sampling analog to digital converter, a digital signal processor, and a personal computer for data display and storage. The operational principle of these detection systems is described, and characteristic features such as energy and position resolution and maximum count rate, which have been determined from tests with conversion electrons and $\beta^-\!$ -particles in the energy range 40--600 keV, are presented