8 research outputs found
γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N
Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90–290 K temperature range and 50–2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε’) shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200–290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect
Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes
Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs1−xNx Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current.
At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal.
Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N)
Exposure levels and health risk of PAHs associated with fine and ultrafine aerosols in an urban site in northern Algeria
Size distribution of toxicants in airborne particulates remains insufficiently investigated in Algeria. A 1-year campaign was
performed at Bab Ezzouar, Algiers (Algeria), aimed at characterizing particulates for their physical and chemical features. For
this purpose, scanning electronic microscopy (SEM), Raman spectroscopy (RaS), and GC-MS methodologies were applied. The
samples were collected on daily basis by means of a high-volume sampling (HVS) system equipped with cascade impactor
separating three size fractions, i.e., particles with aerodynamic diameters d < 1.0 μm (PM1), 1.0 μm <d<2.5 μm (PM2.5), and
2.5 μm <d<10 μm (PM10), respectively. The organic fraction was recovered from substrate through solvent extraction in an
ultrasonic bath, separated and purified by column chromatography, then analyzed by gas chromatography coupled with mass
spectrometry (GC-MS). Investigation was focused on polycyclic aromatic hydrocarbons (PAHs) and the concentration ratios
suitable to investigate the source nature. Further information was drawn from SEM and Raman analyses. Total PAH concentrations
ranged broadly throughout the study period (namely, from 4.1 to 59.7 ng m-3 for PM1, from 2.72 to 32.3 ngm-3 for PM2.5
and from3.30 to 32.7 ngm-3 for PM10). Both approaches and principal component analysis (PCA) of data revealed that emission
from vehicles was the most important PAH source, while tobacco smoke provided an additional contribution
Exposure levels and health risk of PAHs associated with fine and ultrafine aerosols in an urban site in northern Algeria
Size distribution of toxicants in airborne particulates remains insufficiently investigated in Algeria. A 1-year campaign was performed at Bab Ezzouar, Algiers (Algeria), aimed at characterizing particulates for their physical and chemical features. For this purpose, scanning electronic microscopy (SEM), Raman spectroscopy (RaS), and GC-MS methodologies were applied. The samples were collected on daily basis by means of a high-volume sampling (HVS) system equipped with cascade impactor separating three size fractions, i.e., particles with aerodynamic diameters d < 1.0 μm (PM1), 1.0 μm 2.5), and 2.5 μm 10), respectively. The organic fraction was recovered from substrate through solvent extraction in an ultrasonic bath, separated and purified by column chromatography, then analyzed by gas chromatography coupled with mass spectrometry (GC-MS). Investigation was focused on polycyclic aromatic hydrocarbons (PAHs) and the concentration ratios suitable to investigate the source nature. Further information was drawn from SEM and Raman analyses. Total PAH concentrations ranged broadly throughout the study period (namely, from 4.1 to 59.7 ng m-3 for PM1, from 2.72 to 32.3 ng m-3 for PM2.5 and from 3.30 to 32.7 ng m-3 for PM10). Both approaches and principal component analysis (PCA) of data revealed that emission from vehicles was the most important PAH source, while tobacco smoke provided an additional contribution
Synchrotron micro-X-ray fluorescence shows sulfur accumulation in the middle cortex of N2-fixing legume nodules
International audienceSulfur (S) and phosphorus (P) are essential elements for plant growth and physiological functioning. Their deficiency can limit N2 fixation and nodule development in nodulated legumes. The location of S within nodule tissues could provide insights into S metabolism and its little-known relationship with N2 fixation. Determinate and indeterminate nodules were inoculated with specific rhizobia and grown hydroaeroponically under sufficient versus deficient P supplies. Cryogenic and freeze-dried thin sections of nodules at the flowering stage were mapped using synchrotron micro-X-ray fluorescence to determine the S distribution within the nodule tissues with a spatial resolution of 2 or 3 μm. A large accumulation of S was found in the middle cortex for both types of nodules. S was also found in all of the other tissues but with a significantly lower signal. In the middle cortex, P deficiency decreased the S maximum fluorescence intensity by 20% and 25% for the determinate and indeterminate nodules, respectively. In addition, Mg and Cl maps were also collected showing that Mg was mostly localized in the middle and inner cortex, forming a Mg-rich ring consisting of several cell layers for the determinate nodules compared with only one cell layer for the indeterminate nodules. Cl was mainly accumulated in the outer cortex. It is concluded that the accumulation of S in the middle cortex is consistent with its involvement in the ionic equilibrium of the nodule, and in the osmotic variation of the inner cortex cell-size, which would regulate nodule permeability to oxygen