43 research outputs found

    Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me<sub>2</sub>M{tfacnac}] [M = Al, Ga, In; Htfacnac = F<sub>3</sub>CC(OH)CHC(CH<sub>3</sub>)NCH<sub>2</sub>CH<sub>2</sub>OCH<sub>3</sub>]

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    A family of group 13 metal dimethyl complexes of the general form [Me2M{ MeC(O)CHC(NCH2CH2OMe)CF3}] (M = Al (2), Ga (3) or In (4)) have been synthesised by reaction of the isolated free ligand (1) with the corresponding trimethyl-metal reagents. The isolated complexes (2-4) were characterised by elemental analysis, NMR spectroscopy, and the molecular structures of the complexes were determined by single crystal X-ray diffraction which reveals the compounds to be monomeric 5 coordinate complexes with coordination of the pendent ether bearing lariat in the solid state. Thermogravimetric analysis showed complexes 2-4 all to have residual masses, at 200 °C, of 2.4% or less well below the value for the respective metal oxides, and vapour pressure measurements show the indium complex (4) to be an order of magnitude less volatile (0.09 Torr at 80 oC) than the Al (2) or Ga (3) derivatives despite being isoleptic systems. Complexes 2-4 have all been investigated for their utility in the LP-MOCVD growth of the respective metal oxides in the absence of additional oxidant at 400 °C on silicon substrates

    Validation of the NG-18 equations for thick walled pipelines

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    The applicability of the flow stress dependent NG-18 equations to thick wall pipelines such as those used to transport dense phase carbon dioxide (CO2) is demonstrated. A comparison between the components of the NG-18 equations and BS 7910 shows that the factor MT for though-wall defects and MP for part-wall defects in the NG-18 equations are very close to the reference stress solutions in BS 7910 Annex P, which are applicable to thick wall pipe. Thus, by inference, the flow stress dependent form of the NG-18 equations is also applicable to thick wall pipe. A further comparison with experimental failure data for thick wall pipes shows that the flow stress dependent NG-18 equations are applicable to wall thicknesses of up to 47.2 mm when the full-size equivalent upper shelf Charpy V-notch impact energy is at least 50 J. The results suggest that in principle, the flow stress dependent NG-18 equations may be used as limit state functions in models to calculate the failure frequency due to third party external interference, for high toughness, thick wall pipelines such as those required for dense phase CO2 pipelines

    Can Limit State Design be used to Design a Pipeline Above 80% SMYS?’, OMAE

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    ABSTRACT This paper contains the results of a preliminary study, undertaken by C-FER and Andrew Palmer and Associates, for BP Exploration, to demonstrate the feasibility of utilizing limit states design procedures for the design of large diameter, onshore pipelines in remote areas. The objective of the study was to determine if a higher design factor can be justified than that currently specified for such a region; specifically if an increase in the basic design factor, F, from approximately 0.72 to 0.85 could be justified, thereby allowing the pipeline wall thickness to be reduced and a substantial weight saving to be achieved. The work included reliability analyses for three limit state failure scenarios: burst of undamaged pipelines, burst of corroded pipelines and burst of pipelines containing dents and gouges. Results presented show: (1) the calculated probability of rupture for a new pipe (i.e., with no damage, corrosion or other forms of deterioration); (2) the probabilities of failure for pipes containing corrosion or dent/gouge defects; and (3) the effects of a higher design pressure for each limit states scenario. The paper discusses the results, comments on the feasibility of justifying higher design factors and discusses the importance of an appropriate pipeline maintenance management system for monitoring and controlling structural integrity for the full life of a pipeline

    Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:F

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    A novel family of zinc bis beta-ketoiminate complexes 2b-2h have been synthesized by reaction of the isolated free ligands (1a-h) with dimethylzinc. The isolated zinc complexes were characterized by elemental analysis, NMR spectroscopy, and in the case of 2b-d and 2f-h, the molecular structures of the complexes were determined by single crystal X-ray diffraction which reveals the compounds to be pseudo-octahedral 6-coordinate, monomeric homoleptic complexes in the solid state. TG analysis showed complexes 2b-f all to have residual masses at 400 °C of 10% or less, well below the value for ZnO and thus indicative of volatility. Of these systems 2b [Zn{MeC(O)CHC(NCH2CH2OMe)CF3}2] has been investigated for its utility in the AP-MOCVD growth of F –doped ZnO (ZnO:F) in the absence of additional oxidant at 400 °C on glass and silicon substrates

    Tailoring precursors for deposition:synthesis structure and thermal studies of cyclopentadienyl copper(I) isocyanide complexes

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    We report here the synthesis and characterization of a family of copper­(I) metal precursors based around cyclopentadienyl and isocyanide ligands. The molecular structures of several cyclopentadienylcopper­(I) isocyanide complexes have been unambiguously determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted the isopropyl isocyanide complex [(η<sup>5</sup>-C<sub>5</sub>H<sub>5</sub>)­Cu­(CN<sup>i</sup>Pr)] (<b>2a</b>) and the <i>tert</i>-butyl isocyanide complex [(η<sup>5</sup>-C<sub>5</sub>H<sub>5</sub>)­Cu­(CN<sup>t</sup>Bu)] (<b>2b</b>) as possible copper metal chemical vapor deposition (CVD) precursors. Further modification of the precursors with variation of the substituents on the cyclopentadienyl ligand system (varying between H, Me, Et, and <sup>i</sup>Pr) has allowed the affect that these changes would have on features such as stability, volatility, and decomposition to be investigated. As part of this study, the vapor pressures of the complexes <b>2b</b>, [(η<sup>5</sup>-MeC<sub>5</sub>H<sub>4</sub>)­Cu­(CN<sup>t</sup>Bu)] (<b>3b</b>), [(η<sup>5</sup>-EtC<sub>5</sub>H<sub>4</sub>)­Cu­(CN<sup>t</sup>Bu)] (<b>4b</b>), and [(η<sup>5</sup>-<sup>i</sup>PrC<sub>5</sub>H<sub>4</sub>)­Cu­(CN<sup>t</sup>Bu)] (<b>5b</b>) over a 40–65 °C temperature range have been determined. Low-pressure chemical vapor deposition (LP-CVD) was employed using precursors <b>2a</b> and <b>2b</b> to synthesize thin films of metallic copper on silicon, gold, and platinum substrates under a H<sub>2</sub> atmosphere. Analysis of the thin films deposited onto both silicon and gold substrates at substrate temperatures of 180 and 300 °C by scanning electron microscopy and atomic force microscopy reveals temperature-dependent growth features: Films grown at 300 °C are continuous and pinhole-free, whereas films grown at 180 °C consist of highly crystalline nanoparticles. In contrast, deposition onto platinum substrates at 180 °C shows a high degree of surface coverage with the formation of high-density, continuous, and pinhole-free thin films. Powder X-ray diffraction and X-ray photoelectron spectroscopy (XPS) both show the films to be high-purity metallic copper

    1,8-Bis(silylamido)naphthalene complexes of magnesium and zinc synthesized through alkane elimination reactions

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    The reactions between magnesium or zinc alkyls and 1,8-bis(triorganosilyl)diaminonaphthalenes afford the 1,8-bis(triorganosilyl)diamidonaphthalene complexes with elimination of alkanes. The reaction between 1,8-C10H6(NSiMePh2H)2 and one or two equivalents of MgnBu2 affords two complexes with differing coordination environments for the magnesium; the reaction between 1,8-C10H6(NSiMePh2H)2 and MgnBu2 in a 1:1 ratio affords 1,8-C10H6(NSiMePh2)2{Mg(THF)2} (1), which features a single magnesium centre bridging both ligand nitrogen donors, whilst treatment of 1,8-C10H6(NSiR3H)2 (R3 = MePh2, iPr3) with two equivalents of MgnBu2 affords the bimetallic complexes 1,8-C10H6(NSiR3)2{nBuMg(THF)}2 (R3 = MePh2 2, R3 = iPr3 3), which feature four-membered Mg2N2 rings. Similarly, 1,8-C10H6(NSiiPr3)2{MeMg(THF)}2 (4) and 1,8-C10H6(NSiMePh2)2{ZnMe}2 (5) are formed through reactions with the proligands and two equivalents of MMe2 (M = Mg, Zn). The reaction between 1,8-C10H6(NSiMePh2H)2 and two equivalents of MeMgX affords the bimetallic complexes 1,8-C10H6(NSiMePh2)2(XMgOEt2)2 (X = Br 6; X = I 7). Very small amounts of [1,8-C10H6(NSiMePh2)2{IMg(OEt2)}]2 (8), formed through the coupling of two diamidonaphthalene ligands at the 4-position with concomitant dearomatisation of one of the naphthyl arene rings, were also isolated from a solution of 7
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