27 research outputs found
Hydride Vapor Phase Epitaxy of Freestanding GaN Films
๋ณธ ๋
ผ๋ฌธ์์๋ III-V์กฑ ํํฉ๋ฌผ ๋ฐ๋์ฒด์ธ GaN ๋ฌผ์ง์ ZnO๋ฅผ template ์ธต์ ์ด์ฉํ์ฌ Sapphire ๊ธฐํ ์์ ์ฑ์ฅํ์๊ณ ๊ตฌ์กฐ์ , ๊ดํ์ ์กฐ์ฌ๋ฅผ ํตํ์ฌ ๊ณ ํ์ง์ Freestanding(FS)-GaN ๊ธฐํ์ ์ ์์ ๋ํ ๊ฐ๋ฅ์ฑ์ ๊ณ ์ฐฐํ์๋ค. ์ด ๋
ผ๋ฌธ์ ๋ชฉ์ ์ ์ข
๋์ ์ฌ์ฉํด ์ค๋ ๊ธฐํ ์ ๊ฑฐ ๋ฐฉ๋ฒ์ ๋ฌธ์ ์ ๋ค์ ์ํด ๊ณ ํ์ง์ ์ฑ์ฅ์ด ์ ํ์ด ๋์ด์จ ๊ฒ์ ๋ํ์ฌ GaN ๊ธฐํ์ ZnO๋ฅผ sacrificial ์ธต์ผ๋ก ์ฌ์ฉ, ์ฑ์ฅ ์กฐ๊ฑด์ ์ต์ ํ์ ๋ฐ๋ฅธ FS-GaN ๊ธฐํ์ ์๋ก์ด ์ฑ์ฅ ๊ฐ๋ฅ์ฑ์ ๋ณด์ฌ์ค์ ์๋ค. ๋ณธ ๋
ผ๋ฌธ์ ์ด 6 ์ฅ์ผ๋ก ๊ตฌ์ฑ๋์ด ์์ผ๋ฉฐ ๊ฐ ์ฅ์ ๋ด์ฉ์ ๋ค์๊ณผ ๊ฐ๋ค.
์ 1์ฅ์์๋ ๊ธฐ๋ณธ์ ์ธ GaN ๋ฌผ์ฑ๊ณผ ์ข
๋์ FS-GaN ๊ธฐํ์ ์์ด ๊ฐ์ง๊ณ ์๋ ๋ฌธ์ ์ , ๊ทธ๋ฆฌ๊ณ ๋ค์ํ ์์ฉ๋ถ์ผ์ ๋ํ์ฌ ์ค๋ช
์ ํ์๋ค. ์ 2์ฅ์์๋ ์ ์๋ ์๋ฆฝํ GaN ๊ธฐํ์ ์ฑ์ฅ, ํ๊ฐํ๊ธฐ ์ํด ๋ณธ ์ฐ๊ตฌ์์ ์ฌ์ฉํ ๋ฐฉ๋ฒ์ธ HVPE, SEM, HRXRD ๊ทธ๋ฆฌ๊ณ PL ์ธก์ ์ ๋ํ์ฌ ์ ๋ฆฌ๋ฅผ ํ์๋ค. ์ 3์ฅ์ GaN์ ์ฑ์ฅ์ ์ํ ZnO template ์ธต์ ์ ํฉํ polarity์ ํ์ธ์ ์๋ค. ๋ค๋ฅธ polarity๋ฅผ ๊ฐ์ง๋ ZnO ์์ ์ฑ์ฅ๋ GaN์ ๊ตฌ์กฐ์ ๋ฐ ๊ดํ์ ํน์ฑ์ ๋ํด ๊ณ ์ฐฐ ํ์๋ค. ์ 4์ฅ์์๋ ์ฑ์ฅ์จ๋ ๋ฐ ๊ฐ์ค flow (V/III)์ ๋ณํ๋ฅผ ํตํ์ฌ GaN ์ฑ์ฅ์ ์ ํฉํ ์ฑ์ฅ์กฐ๊ฑด์ ๊ตฌ์กฐ์ ๋ฐ ๊ดํ์ ํน์ฑ ํ๊ฐ๋ฅผ ํตํ์ฌ ํ์ธํ์๋ค. ๊ทธ๋ฆฌ๊ณ ์ 5์ฅ์์ 3์ฅ๊ณผ 4์ฅ์์ ํ์ธ ๋ ZnO์ polarity์ GaN์ ์ฑ์ฅ์กฐ๊ฑด์ ํตํ์ฌ ์๋ฆฝํ GaN ๊ธฐํ์ ํํ์ etching ๋ฐฉ๋ฒ์ ํตํ์ฌ ์ ์ ํ์์ผ๋ฉฐ ๋ง์ง๋ง์ผ๋ก ์ 6์ฅ์์๋ ๋ณธ ๋
ผ๋ฌธ์์ ์ป์ ๊ฒฐ๊ณผ๋ฅผ ์ ๋ฆฌํ์ฌ ๊ฒฐ๋ก ๋ฐ ํฅํ ๊ณผ์ ์ ๋ํด ๊ธฐ์ ํ์๋ค.In this thesis, the growth structural and optical properties of FS-GaN with ZnO template buffer layer have been investigated. The objective of this thesis is to fabricate the high quality FS-GaN substrate by using ZnO sacrificial layer.
In the chapter 1, the fundamental GaN properties, problems in the fabrication of FS-GaN substrate, and many application of the GaN are introduced. In the chapter 2, the principles of hydride vapor phase Epitaxy (HVPE), scanning electron microscopy (SEM), high resolution X-ray diffraction (HR-XRD), and photoluminescence (PL) are explained. In the chapter 3, ZnO polarity was determined for the growth of GaN on ZnO. In the chapter 4, the high quality GaN film growth was achieved by using ZnO sacrificial layer and optimization of growth condition. And in the chapter 5, a new self-separation method by using chemical etching of ZnO template was developed. And the quality of GaN was characterized in terms of structural and luminescence properties. Finally, the results found from this thesis are summarized and concluded in the chapter 6.๋
ผ ๋ฌธ ์ ์ฝ 1
Abstract 3
Figure list 4
Table list 8
Chapter 1. Introduction
1.1) Introduction to III-Nitrides semiconductors
1.1.1) Application of GaN 9
1.1.2) Physical properties of GaN 12
1.1.3) Problems in GaN epitaxy 13
1.1.4) Piezoelectric polarization in GaN 17
1.2) Necessity of Free-standing GaN substrate
1.2.1) History of GaN substrates and problems in fabrication 19
1.2.2) Difficulty in substrate removal techniques by HVPE 22
1.3) Proposal and purpose of this study 28
Reference 31
Chapter 2. Experimental
2.1) growth method
2.1.1) Hydride Vapor Phase Epitaxy 35
2.2) Characterization of measurement method
2.2.1) Scanning Electron Microscopy (SEM) 37
2.2.2) High Resolution X-ray Diffraction (HRXRD)
2.2.2.1) Conventional high resolution X-ray 40
2.2.2.2) scan 42
2.2.3) Photoluminescence (PL) 45
References 50
Chapter 3. Comparison of GaN on Zn-polar/O-polar ZnO
3.1) Introduction 51
3.2) Experimental details 53
3.3) ZnO etching rate of GaN after growth 53
3.4) Surface morphology and Photoluminescence (PL) intensity 54
3.5) Conclusion 55
Reference 56
Chapter 4. Optimization of growth condition for high quality GaN grown on ZnO template
4.1) Introduction 57
4.2) Experiment details 57
4.3) Effect of the growth temperature for GaN on ZnO growth
4.31) ZnO etching rate after GaN growth 58
4.3.2) Surface morphology 59
4.3.3) Evaluation of structural property by HRXRD 60
4.3.4) Room temperature (RT) of PL spectrum 61
4.4) Effect of the V/III ratio for GaN on ZnO growth
4.4.1) ZnO etching rate after GaN growth 62
4.4.2) Surface morphology 63
4.4.3) Evaluation by HRXRD 64
4.4.4) Room temperature (RT) of PL spectrum 65
4.5) Conclusion 66
Reference 67
Chapter 5. Fabrication of Freestanding GaN substrate
5.1) Introduction 68
5.2) Experimental details 69
5.3) Fabrication sequence of the self-separated FS-GaN substrate 69
5.4) Evaluation by HRXRD 70
5.5) Low temperature Photoluminescence (PL) properties 71
5.6) Temperature dependence Photoluminescence (PL) properties 72
5.7) Conclusion 73
References 74
Chapter 6. Summary and conclusion 75
Appendix A 77
๊ฐ์ฌ์ ๊ธ 79
Curriculum vitae 80-2scan (rocking curve) and ᠋
A Rhetorical Analysis of Party Manifestos
ํ์๋
ผ๋ฌธ(์์ฌ) -- ์์ธ๋ํ๊ต๋ํ์ : ๊ตญ์ ๋ํ์ ๊ตญ์ ํ๊ณผ(๊ตญ์ ํ๋ ฅ์ ๊ณต), 2023. 2. ๊นํ๊ท .ODA expenditure for any given democratic donor country is primarily determined by the incumbent political party. In line with common speculation, Thรฉrien (2000, 2002) and Tingley (2009) argue that as a government becomes more right-leaning on the political spectrum, foreign aid effort decreases. Based on the indicated theoretical framework, this article selects the United Kingdom as a case study amongst other two-party democracies to identify distinct patterns of ODA expenditure that arise from the change in the majority party and whether the challenger party displays extra effort on foreign aid policies during the election periods of 1970, 1974, 1979 and 1997. The results from the rhetorical analysis of party manifestos indicate that in the case of the UK, only the left-leaning party leverages ODA policy as a strategic tool in challenging the incumbent party. Furthermore, ODA expenditure increases with the politically left-leaning party (Labour) and decreases when the majority party changes to the political right (Conservative).๊ฒฝ์ ํ๋ ฅ๊ฐ๋ฐ๊ธฐ๊ตฌ(OECD)์ ์๋ฃ์ ์ํ๋ฉด ๊ณต์ ๊ฐ๋ฐ์์กฐ(ODA)๋ ์์กฐ๊ตญ๋ค์ ๊ฒฝ์ ์ํฉ ๋ณ๋์ ํฐ ํ๋ ฅ์ฑ์ ๋ณด์ด๋ ์ ์ผํ ํํ์ ๋์ธ์์กฐ๋ค. ์ผ๋ฐ์ ์ธ ๊ฒฝ์ฐ, ์์กฐ๊ตญ์ ODA ์ง์ถ ๊ด๋ จ ๊ฒฐ์ ์ ๊ฐ ๊ตญ๊ฐ์ ์ฌ๋น ๋๋ ์ฐ์ธ ์ ๋น์ ์ํด ์ดํ๋๋ค. Thรฉrien (2000;2002)๊ณผ Tingley (2009)๋ ์ผ๊ฐ ์ ๋ถ์ ์ ์น์ ์คํํธ๋ผ์ด ์ฐ๊ฒฝํ(๋ณด์ํ)๋จ์ ๋ฐ๋ผ ํด์ธ ์์กฐ ์ง์ถ์ด ๊ฐ์ํ๋ค๊ณ ์ฃผ์ฅํ๋ค. ๋ณธ ๋
ผ๋ฌธ์ ์ด ์ฃผ์ฅ์ ๋ฐํ์ผ๋ก ์๊ตญ์ ์ฌ๋ก์ฐ๊ตฌ๋ฅผ ํตํด: ์ฒซ์งธ, ์ฐ์ธ ์ ๋น์ ๊ต์ฒด๊ฐ ODA ์ง์ถ ์์ค์ ๋ฏธ์น๋ ์ํฅ ๋ถ์๊ณผ; ๋์งธ, ์ ๊ฑฐ ์์ ์์์ ์ผ๋น์ ODA ์ ์ฑ
ํ์ฉ์ฑ์ ๋ถ์ํ๋ค.Abstract 2
1. Introduction 6
1.1 Purpose and Question of Research 6
1.2 Background of Research 7
1.3 Research Framework and Methodology 11
1.4 Limitations 16
2. Literature Review 17
3. Overview of ODA Development in the UK 21
3.1 Early Days of UK Foreign Aid: 1920s-1960s 21
3.2. UK ODA Development: 1960s-2000s 23
3.3. UK ODA Development: 2000s to Today 29
4. Political Parties and ODA Efforts 37
4.1 Labour to Conservative in 1970 and 1979 39
4.2 Conservative to Labour in 1974 and 1997 46
5. Findings and Discussion 55
6. Conclusion 60
Bibliography 62์
Serum Dickkopf-1 in Combined with CA 19-9 as a Biomarker of Intrahepatic Cholangiocarcinoma
Dickkopf-related protein 1 (DKK-1) has a diagnostic and prognostic value in various malignant tumors. We investigated the diagnostic and prognostic performance of DKK-1 in combination with carbohydrate antigen 19-9 (CA 19-9) in cholangiocarcinoma (CCC) patients. Serum DKK-1 levels were measured using enzyme-linked immunosorbent assay. The receiver operating characteristic (ROC) curve, area under ROC (AUROC) analyses, Kaplan-Meier method, and Cox proportional hazard model were used to evaluate the diagnostic and prognostic performance of DKK-1 in combination with CA 19-9. We checked DKK-1 levels in 356 CCC patients and found that DKK-1 was significantly elevated only in 79 intrahepatic CCC (ICC) patients compared to controls (340.5 vs. 249.8 pg/mL, p = 0.002). The optimal cutoff level of DKK-1 used to identify ICC patients was 258.0 pg/mL (AUROC = 0.637, sensitivity = 59.5%, specificity = 56.9%, positive predictive value (PPV) = 40.5%, negative predictive value (NPV) = 74.0%, positive likelihood ratio (LR) = 1.38, and negative LR = 0.71). Using this cutoff, 47 (59.5%) patients were correctly diagnosed with ICC. DKK-1 in combination with CA 19-9 showed a better diagnostic performance (AUROC = 0.793, sensitivity = 74.7%, specificity = 56.3%, PPV = 45.7, NPV = 81.8, positive LR = 1.71, and negative LR = 0.45) than CA 19-9 alone. The low DKK-1 and CA 19-9 expression group had a significantly longer overall survival (OS) than the high expression group (p = 0.006). The higher level of DKK-1 and CA 19-9 was independently associated with shorter OS (hazard ratio = 3.077, 95% confidence interval 1.389-6.819, p = 0.006). The diagnostic and prognostic performance of DKK-1 in combination with CA 19-9 might be better than those of CA 19-9 alone in ICC patients.ope
(An)Analysis of implementation process of New Korean Community-oriented Policing System : mainly focused behavior of street-level police bureaucracy
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ผ๋ฌธ(์์ฌ)--์์ธ๋ํ๊ต ํ์ ๋ํ์ :ํ์ ํ๊ณผ ์ ์ฑ
ํ์ ๊ณต,2005.Maste
(The)Effect of running and muscular resistance training in Circadian Rhythms on Melatonin, Growth hormone, VOโmax, muscular strength, muscular endurance, flexibility, fat mass, and lean body mass
ํ์๋
ผ๋ฌธ(์์ฌ)--์์ธ๋ํ๊ต ๋ํ์ :์ฒด์ก๊ต์ก๊ณผ,2005.Maste
์ด๋์ด ์ผ์ฆ ๋ฐ์๊ณผ ํญ์ฐํ ๋ฐฉ์ด๊ธฐ์ ์ ๋ฏธ์น๋ ์ํฅ
Thesis(doctors) --์์ธ๋ํ๊ต ๋ํ์ :์ฒด์ก๊ต์ก๊ณผ,2008.Docto