Variability and reliability analysis of carbon nanotube technology in the presence of manufacturing imperfections

In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years later, Kahng and Atalla invented the MOSFET. Since that time, it has become the most widely used type of transistor in Integrated Circuits (ICs) and then the most important device in the electronics industry. Progress in the field for at least the last 40 years has followed an exponential behavior in accordance with Moore¿s Law. That is, in order to achieve higher densities and performance at lower power consumption, MOS devices have been scaled down. But this aggressive scaling down of the physical dimensions of MOSFETs has required the introduction of a wide variety of innovative factors to ensure that they could still be properly manufactured. Transistors have expe- rienced an amazing journey in the last 10 years starting with strained channel CMOS transistors at 90nm, carrying on the introduction of the high-k/metal-gate silicon CMOS transistors at 45nm until the use of the multiple-gate transistor architectures at 22nm and at recently achieved 14nm technology node. But, what technology will be able to produce sub-10nm transistors? Different novel materials and devices are being investigated. As an extension and enhancement to current MOSFETs some promising devices are n-type III-V and p-type Germanium FETs, Nanowire and Tunnel FETs, Graphene FETs and Carbon Nanotube FETs. Also, non-conventional FETs and other charge-based information carrier devices and alternative information processing devices are being studied. This thesis is focused on carbon nanotube technology as a possible option for sub-10nm transistors. In recent years, carbon nanotubes (CNTs) have been attracting considerable attention in the field of nanotechnology. They are considered to be a promising substitute for silicon channel because of their small size, unusual geometry (1D structure), and extraordinary electronic properties, including excellent carrier mobility and quasi-ballistic transport. In the same way, carbon nanotube field-effect transistors (CNFETs) could be potential substitutes for MOSFETs. Ideal CNFETs (meaning all CNTs in the transistor behave as semiconductors, have the same diameter and doping level, and are aligned and well-positioned) are predicted to be 5x faster than silicon CMOS, while consuming the same power. However, nowadays CNFETs are also affected by manufacturing variability, and several significant challenges must be overcome before these benefits can be achieved. Certain CNFET manufacturing imperfections, such as CNT diameter and doping variations, mispositioned and misaligned CNTs, high metal-CNT contact resistance, the presence of metallic CNTs (m-CNTs), and CNT density variations, can affect CNFET performance and reliability and must be addressed. The main objective of this thesis is to analyze the impact of the current CNFET manufacturing challenges on multi-channel CNFET performance from the point of view of variability and reliability and at different levels, device and circuit level. Assuming that CNFETs are not ideal or non-homogeneous because of today CNFET manufacturing imperfections, we propose a methodology of analysis that based on a CNFET ideal compact model is able to simulate heterogeneous or non-ideal CNFETs; that is, transistors with different number of tubes that have different diameters, are not uniformly spaced, have different source/drain doping levels, and, most importantly, are made up not only of semiconducting CNTs but also metallic ones. This method will allow us to analyze how CNT-specific variations affect CNFET device characteristics and parameters and CNFET digital circuit performance. Furthermore, we also derive a CNFET failure model and propose an alternative technique based on fault-tolerant architectures to deal with the presence of m-CNTs, one of the main causes of failure in CNFET circuits

Understanding Quantum Technologies 2022

Understanding Quantum Technologies 2022 is a creative-commons ebook that provides a unique 360 degrees overview of quantum technologies from science and technology to geopolitical and societal issues. It covers quantum physics history, quantum physics 101, gate-based quantum computing, quantum computing engineering (including quantum error corrections and quantum computing energetics), quantum computing hardware (all qubit types, including quantum annealing and quantum simulation paradigms, history, science, research, implementation and vendors), quantum enabling technologies (cryogenics, control electronics, photonics, components fabs, raw materials), quantum computing algorithms, software development tools and use cases, unconventional computing (potential alternatives to quantum and classical computing), quantum telecommunications and cryptography, quantum sensing, quantum technologies around the world, quantum technologies societal impact and even quantum fake sciences. The main audience are computer science engineers, developers and IT specialists as well as quantum scientists and students who want to acquire a global view of how quantum technologies work, and particularly quantum computing. This version is an extensive update to the 2021 edition published in October 2021.Comment: 1132 pages, 920 figures, Letter forma

Microkernel mechanisms for improving the trustworthiness of commodity hardware

The thesis presents microkernel-based software-implemented mechanisms for improving the trustworthiness of computer systems based on commercial off-the-shelf (COTS) hardware that can malfunction when the hardware is impacted by transient hardware faults. The hardware anomalies, if undetected, can cause data corruptions, system crashes, and security vulnerabilities, significantly undermining system dependability. Specifically, we adopt the single event upset (SEU) fault model and address transient CPU or memory faults. We take advantage of the functional correctness and isolation guarantee provided by the formally verified seL4 microkernel and hardware redundancy provided by multicore processors, design the redundant co-execution (RCoE) architecture that replicates a whole software system (including the microkernel) onto different CPU cores, and implement two variants, loosely-coupled redundant co-execution (LC-RCoE) and closely-coupled redundant co-execution (CC-RCoE), for the ARM and x86 architectures. RCoE treats each replica of the software system as a state machine and ensures that the replicas start from the same initial state, observe consistent inputs, perform equivalent state transitions, and thus produce consistent outputs during error-free executions. Compared with other software-based error detection approaches, the distinguishing feature of RCoE is that the microkernel and device drivers are also included in redundant co-execution, significantly extending the sphere of replication (SoR). Based on RCoE, we introduce two kernel mechanisms, fingerprint validation and kernel barrier timeout, detecting fault-induced execution divergences between the replicated systems, with the flexibility of tuning the error detection latency and coverage. The kernel error-masking mechanisms built on RCoE enable downgrading from triple modular redundancy (TMR) to dual modular redundancy (DMR) without service interruption. We run synthetic benchmarks and system benchmarks to evaluate the performance overhead of the approach, observe that the overhead varies based on the characteristics of workloads and the variants (LC-RCoE or CC-RCoE), and conclude that the approach is applicable for real-world applications. The effectiveness of the error detection mechanisms is assessed by conducting fault injection campaigns on real hardware, and the results demonstrate compelling improvement