Breaking the Buildup-time Limit of sensitivity in Avalanche Photodiodes by Dynamic Biasing

Avalanche photodiodes (APDs) are the preferred photodetectors for direct-detection, high data-rate long-haul optical telecommunications. APDs can detect low-level optical signals due to their internal amplification of the photon-generated electrical current, which is attributable to the avalanche of electron and hole impact ionizations. Despite recent advances in APDs aimed at reducing the average avalanche-buildup time, which causes intersymbol interference and compromises receiver sensitivity at high data rates, operable speeds of commercially available APDs have been limited to 10Gbps. We report the first demonstration of a dynamically biased APD that breaks the traditional sensitivity-versus-speed limit by employing a data-synchronous sinusoidal reverse-bias that drastically suppresses the average avalanche-buildup time. Compared with traditional DC biasing, the sensitivity of germanium APDs at 3Gbps is improved by 4.3 dB, which is equivalent to a 3,500-fold reduction in the bit-error rate. The method is APD-type agnostic and it promises to enable operation at rates of 25Gbps and beyond

Multiplication theory for dynamically biased avalanche photodiodes: new limits for gain bandwidth product

Novel theory is developed for the avalanche multiplication process in avalanche photodiodes (APDs) under time-varying reverse-biasing conditions. Integral equations are derived characterizing the statistics of the multiplication factor and the impulse-response function of APDs, as well as their breakdown probability, all under the assumption that the electric field driving the avalanche process is time varying and spatially nonuniform. Numerical calculations generated by the model predict that by using a bit-synchronous sinusoidal biasing scheme to operate the APD in an optical receiver, the pulse-integrated gain-bandwidth product can be improved by a factor of 5 compared to the same APD operating under the conventional static biasing. The bit-synchronized periodic modulation of the electric field in the multiplication region serves to (1) produce large avalanche multiplication factors with suppressed avalanche durations for photons arriving in the early phase of each optical pulse; and (2) generate low avalanche gains and very short avalanche durations for photons arriving in the latter part of each optical pulse. These two factors can work together to reduce intersymbol interference in optical receivers without sacrificing sensitivity

Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single Si nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.Comment: 11 pages, 7 figure

Solar energy conversion through the interaction of plasmons with tunnel junctions. Part A: Solar cell analysis. Part B: Photoconductor analysis

A solar cell utilizing guided optical waves and tunnel junctions was analyzed to determine its feasibility. From this analysis, it appears that the limits imposed upon conventional multiple cell systems also limit this solar cell. Due to this limitation, it appears that the relative simplicity of the conventional multiple cell systems over the solar cell make the conventional multiple cell systems the more promising candidate for improvement. It was discovered that some superlattice structures studied could be incorporated into an infrared photodetector. This photoconductor appears to be promising as a high speed, sensitive (high D sup star sub BLIP) detector in the wavelength range from 15 to over 100 micrometers

Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but few device configurations has been explored for a deterministic control of a space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible - near-infrared, zero-bias and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, with quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this study is the first demonstration of post-fabrication-free two-dimensional material active silicon photonic devices.Comment: NPJ 2D materials and applications (2018

Multiphysics modelling of high-speed optoelectronic devices for silicon photonics platforms

L'abstract è presente nell'allegato / the abstract is in the attachmen

Miniaturized Silicon Photodetectors

Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications

Ge-Photodetectors for Si-Based Optoelectronic Integration

High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3–1.55 μm. Such devices are key components in several applications such as local area networks, board to board, chip to chip and intrachip interconnects. Recent technological achievements in growth of high quality SiGe/Ge films on Si wafers have opened up the possibility of low cost Ge-based photodetectors for near infrared communication bands and high resolution spectral imaging with high quantum efficiencies. In this review article, the recent progress in the development and integration of Ge-photodetectors on Si-based photonics will be comprehensively reviewed, along with remaining technological issues to be overcome and future research trends