Extending systems-on-chip to the third dimension : performance, cost and technological tradeoffs.

Because of the today's market demand for high-performance, high-density portable hand-held applications, electronic system design technology has shifted the focus from 2-D planar SoC single-chip solutions to different alternative options as tiled silicon and single-level embedded modules as well as 3-D integration. Among the various choices, finding an optimal solution for system implementation dealt usually with cost, performance and other technological trade-off analysis at the system conceptual level. It has been identified that the decisions made within the first 20% of the total design cycle time will ultimately result up to 80% of the final product cost. In this paper, we discuss appropriate and realistic metric for performance and cost trade-off analysis both at system conceptual level (up-front in the design phase) and at implementation phase for verification in the three-dimensional integration. In order to validate the methodology, two ubiquitous electronic systems are analyzed under various implementation schemes and discuss the pros and cons of each of them

Two- and Three-dimensional High Performance, Patterned Overlay Multi-chip Module Technology

A two- and three-dimensional multi-chip module technology was developed in response to the continuum in demand for increased performance in electronic systems, as well as the desire to reduce the size, weight, and power of space systems. Though developed to satisfy the needs of military programs, such as the Strategic Defense Initiative Organization, the technology, referred to as High Density Interconnect, can also be advantageously exploited for a wide variety of commercial applications, ranging from computer workstations to instrumentation and microwave telecommunications. The robustness of the technology, as well as its high performance, make this generality in application possible. More encouraging is the possibility of this technology for achieving low cost through high volume usage

Multiport VNA Measurements

This article presents some of the most recent multiport VNA measurement methodologies used to characterize these highspeed digital networks for signal integrity. There will be a discussion of the trends and measurement challenges of high-speed digital systems, followed by a presentation of the multiport VNA measurement system details, calibration, and measurement techniques, as well as some examples of interconnect device measurements. The intent here is to present some general concepts and trends for multiport VNA measurements as applied to computer system board-level interconnect structures, and not to promote any particular brand or produc

Photonic integration enabling new multiplexing concepts in optical board-to-board and rack-to-rack interconnects

New broadband applications are causing the datacenters to proliferate, raising the bar for higher interconnection speeds. So far, optical board-to-board and rack-to-rack interconnects relied primarily on low-cost commodity optical components assembled in a single package. Although this concept proved successful in the first generations of optical-interconnect modules, scalability is a daunting issue as signaling rates extend beyond 25 Gb/s. In this paper we present our work towards the development of two technology platforms for migration beyond Infiniband enhanced data rate (EDR), introducing new concepts in board-to-board and rack-to-rack interconnects. The first platform is developed in the framework of MIRAGE European project and relies on proven VCSEL technology, exploiting the inherent cost, yield, reliability and power consumption advantages of VCSELs. Wavelength multiplexing, PAM-4 modulation and multi-core fiber (MCF) multiplexing are introduced by combining VCSELs with integrated Si and glass photonics as well as BiCMOS electronics. An in-plane MCF-to-SOI interface is demonstrated, allowing coupling from the MCF cores to 340x400 nm Si waveguides. Development of a low-power VCSEL driver with integrated feed-forward equalizer is reported, allowing PAM-4 modulation of a bandwidth-limited VCSEL beyond 25 Gbaud. The second platform, developed within the frames of the European project PHOXTROT, considers the use of modulation formats of increased complexity in the context of optical interconnects. Powered by the evolution of DSP technology and towards an integration path between inter and intra datacenter traffic, this platform investigates optical interconnection system concepts capable to support 16QAM 40GBd data traffic, exploiting the advancements of silicon and polymer technologies

Thermo-mechanical stress measurement and analysis in three dimensional interconnect structures

Three-dimensional (3-D) integration is effective to overcome the wiring limit imposed on device density and performance with continued scaling. The application of TSV (Through-Silicon Via) is essential for 3D IC integration. TSVs are embedded into the silicon substrate to form vertical, electrical connections between stacked IC chips. However, due to the large CTE mismatch between Silicon and Copper, thermal stresses are induced by various thermal histories from the device processing, and they have caused serious concerns regarding the thermal-mechanical reliability. Firstly, a semi-analytic approach is introduced to understand stress distributions in TSV structures. This is followed by application of finite element analysis for more accurate prediction of stress behavior according to the real geometry of the sample. The conventional Raman method is used to measure the linear combination of in-plane stress components near silicon top surface Secondly, the limitation of conventional Raman method is discussed: only certain linear combination of in-plane stress, instead of separate value for each stress components, can be obtained. Two different kinds of innovative Raman measurements have been developed and employed to study the normal stress components separately. Both of them take advantages of different laser polarization profiles to resolve the normal stress components separately based on experimental data. The top-down Raman measurements utilize so called “high NA effect” to obtain additional information, and can resolve all 3 normal stress components. Independent bending beam experiments are used to validate the results from cross-section Raman measurement on the same sample. The correlation between top-down Raman measurement and cross-section Raman measurement are investigated as well. Lastly, as a typical example of 3D IC package, a stack-die memory package is presented. Finite element analysis combined with cross-section Raman measurement and high resolution moiré interferometry were employed to investigate the thermal-mechanical reliability and chip-package interaction of the stack-die memory structure.Physic

Heterogeneous Integration on Silicon-Interconnect Fabric using fine-pitch interconnects (≤10 �m)

Today, the ever-growing data-bandwidth demand is pushing the boundaries of the traditional printed circuit board (PCB) based integration schemes. Moreover, with the apparent saturation of semiconductor scaling, commonly called Moore's law, system scaling warrants a paradigm shift in packaging technologies, assembly techniques, and integration methodologies. In this work, a superior alternative to PCBs called the Silicon-Interconnect Fabric (Si-IF) is investigated. The Si-IF is a silicon-based, package-less, fine-pitch, highly scalable, heterogeneous integration platform for wafer-scale systems. In this technology, unpackaged dielets are assembled on the Si-IF at small inter-dielet spacings (≤100 �m) using fine-pitch (≤10 �m) die-to-substrate interconnects. A novel assembly process using a solder-less direct metal-metal (gold-gold and copper-copper) thermal compression bonding was developed. Using this process, sub-10 �m pitch interconnects with a low specific contact resistance of ≤0.7 Ω-�m2 were successfully demonstrated. Because of the tightly packed Si-IF assembly, the communication links between the neighboring dies are short (≤500 �m) with low loss (≤2 dB), comparable to on-chip connections. Consequently, simple buffers can transfer data between dies using a Simple Universal Parallel intERface for chips (SuperCHIPS) at low latency (<30 ps), low energy per bit (≤0.03 pJ/b), and high data-rates (up to 10 Gbps/link), corresponding to an aggregate bandwidth up to 8 Tbps/mm. The benefits of the SuperCHIPS protocol were experimentally demonstrated to provide 5-90X higher data-bandwidth, 8-30X lower latency, and 5-40X lower energy per bit compared to existing integration schemes. This dissertation addresses the assembly technology and communication protocols of the Si-IF technology

CMOS array design automation techniques

The design considerations and the circuit development for a 4096-bit CMOS SOS ROM chip, the ATL078 are described. Organization of the ATL078 is 512 words by 8 bits. The ROM was designed to be programmable either at the metal mask level or by a directed laser beam after processing. The development of a 4K CMOS SOS ROM fills a void left by available ROM chip types, and makes the design of a totally major high speed system more realizable

Test-Cost Modeling and Optimal Test-Flow Selection of 3D-Stacked ICs

Three-dimensional (3D) integration is an attractive technology platform for next-generation ICs. Despite the benefits offered by 3D integration, test cost remains a major concern, and analysis and tools are needed to understand test flows and minimize test cost.We propose a generic cost model to account for various test costs involved in 3D integration and present a formal representation of the solution space to minimize the overall cost. We present an algorithm based on A*—a best-first search technique—to obtain an optimal solution. An approximation algorithm with provable bounds on optimality is proposed to further reduce the search space. In contrast to prior work, which is based on explicit enumeration of test flows, we adopt a formal optimization approach, which allows us to select an effective test flow by systematically exploring an exponentially large number of candidate test flows. Experimental results highlight the effectiveness of the proposed method. Adopting a formal approach to solving the cost-minimization problem provides useful insights that cannot be derived via selective enumeration of a smaller number of candidate test flows.This research was supported in part by the National Science Foundation under grant no. CCF-1017391, the Semiconductor Research Corporation under contract no. 2118, a grant from Intel Corporation, and a gift from Cisco Systems through the Silicon Valley Community Foundation

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity