3,237 research outputs found
Technologies for 3D Heterogeneous Integration
3D-Integration is a promising technology towards higher interconnect
densities and shorter wiring lengths between multiple chip stacks, thus
achieving a very high performance level combined with low power consumption.
This technology also offers the possibility to build up systems with high
complexity just by combining devices of different technologies. For ultra thin
silicon is the base of this integration technology, the fundamental processing
steps will be described, as well as appropriate handling concepts. Three main
concepts for 3D integration have been developed at IZM. The approach with the
greatest flexibility called Inter Chip Via - Solid Liquid Interdiffusion
(ICV-SLID) is introduced. This is a chip-to-wafer stacking technology which
combines the advantages of the Inter Chip Via (ICV) process and the
solid-liquid-interdiffusion technique (SLID) of copper and tin. The fully
modular ICV-SLID concept allows the formation of multiple device stacks. A test
chip was designed and the total process sequence of the ICV-SLID technology for
the realization of a three-layer chip-to-wafer stack was demonstrated. The
proposed wafer-level 3D integration concept has the potential for low cost
fabrication of multi-layer high-performance 3D-SoCs and is well suited as a
replacement for embedded technologies based on monolithic integration. To
address yield issues a wafer-level chip-scale handling is presented as well, to
select known-good dies and work on them with wafer-level process sequences
before joining them to integrated stacks.Comment: Submitted on behalf of EDA Publishing Association
(http://irevues.inist.fr/handle/2042/16838
Sensor/ROIC Integration using Oxide Bonding
We explore the Ziptronix Direct Bond Interconnect technology for the
integration of sensors and readout integrated circuits (ROICs) for high energy
physics. The technology utilizes an oxide bond to form a robust mechanical
connection between layers which serves to assist with the formation of metallic
interlayer connections. We report on testing results of sample sensors bonded
to ROICs and thinned to 100 microns.Comment: Talk given at the 2008 International Linear Collider Workshop (LCWS08
and ILC08), Chicago, Illinois, November 16-20, 2008. 4 pages, 1 figur
R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging
This report reviews current trends in the R&D of semiconductor pixellated
sensors for vertex tracking and radiation imaging. It identifies requirements
of future HEP experiments at colliders, needed technological breakthroughs and
highlights the relation to radiation detection and imaging applications in
other fields of science.Comment: 17 pages, 2 figures, submitted to the European Strategy Preparatory
Grou
A review of advances in pixel detectors for experiments with high rate and radiation
The Large Hadron Collider (LHC) experiments ATLAS and CMS have established
hybrid pixel detectors as the instrument of choice for particle tracking and
vertexing in high rate and radiation environments, as they operate close to the
LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for
which the tracking detectors will be completely replaced, new generations of
pixel detectors are being devised. They have to address enormous challenges in
terms of data throughput and radiation levels, ionizing and non-ionizing, that
harm the sensing and readout parts of pixel detectors alike. Advances in
microelectronics and microprocessing technologies now enable large scale
detector designs with unprecedented performance in measurement precision (space
and time), radiation hard sensors and readout chips, hybridization techniques,
lightweight supports, and fully monolithic approaches to meet these challenges.
This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog.
Phy
Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC
The R&D activity presented is focused on the development of new modules for
the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The
performance after irradiation of n-in-p pixel sensors of different active
thicknesses is studied, together with an investigation of a novel
interconnection technique offered by the Fraunhofer Institute EMFT in Munich,
the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard
solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with
an active thickness of 75 um or 150 um, produced at the MPI Semiconductor
Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated
at VTT, Finland. Hit efficiencies are derived from beam test data for thin
devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge
devices, the charge collection properties of the edge pixels before irradiation
is discussed in detail, with respect to the inner ones, using measurements with
radioactive sources. Beyond the active edge sensors, an additional ingredient
needed to design four side buttable modules is the possibility of moving the
wire bonding area from the chip surface facing the sensor to the backside,
avoiding the implementation of the cantilever extruding beyond the sensor area.
The feasibility of this process is under investigation with the FE-I3 SLID
modules, where Inter Chip Vias are etched, employing an EMFT technology, with a
cross section of 3 um x 10 um, at the positions of the original wire bonding
pads.Comment: Proceedings for Pixel 2012 Conference, submitted to NIM A, 6 page
3D System Integration for high density Interconnects
3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also offers the possibility to build up systems with high complexity by combining devices of different technologies. The fundamental processing steps will be described, as well as appropriate handling concepts and first electrical results of realized 3D-integrated stacks
Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors
The performance of pixel modules built from 75 micrometer thin silicon
sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion
(SLID) interconnection technology is presented. This technology, developed by
the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It
allows for stacking of different interconnected chip and sensor layers without
destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs)
this paves the way for vertical integration. Both technologies are combined in
a pixel module concept which is the basis for the modules discussed in this
paper.
Mechanical and electrical parameters of pixel modules employing both SLID
interconnections and sensors of 75 micrometer thickness are covered. The
mechanical features discussed include the interconnection efficiency, alignment
precision and mechanical strength. The electrical properties comprise the
leakage currents, tuning characteristics, charge collection, cluster sizes and
hit efficiencies. Targeting at a usage at the high luminosity upgrade of the
LHC accelerator called HL-LHC, the results were obtained before and after
irradiation up to fluences of
(1 MeV neutrons).Comment: 16 pages, 22 figure
Packaging technology enabling flexible optical interconnections
This paper reports on the latest trends and results on the integration of optical and opto-electronic devices and interconnections inside flexible carrier materials. Electrical circuits on flexible substrates are a very fast growing segment in electronics, but opto-electronics and optics should be able to follow these upcoming trends. This paper presents the back-thinning and packaging of single opto-electronic devices resulting in highly flexible and reliable packages. Optical waveguides and optical out-of-plane coupling structures are integrated inside the same layer stack, resulting in complete VCSEL-to-PD links with low total optical losses and high resistance to heat cycling and moisture exposure
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