19 research outputs found
On variability and reliability of poly-Si thin-film transistors
In contrast to conventional bulk-silicon technology, polysilicon (poly-Si) thin-film transistors (TFTs) can be implanted in flexible substrate and can have low process temperature. These attributes make poly-Si TFT technology more attractive for new applications, such as flexible displays, biosensors, and smart clothing. However, due to the random nature of grain boundaries (GBs) in poly-Si film and self-heating enhanced negative bias temperature instability (NBTI), the variability and reliability of poly-Si TFTs are the main obstacles that impede the application of poly-Si TFTs in high-performance circuits. The primary focus of this dissertation is to develop new design methodologies and modeling techniques for facilitating new applications of poly-Si TFT technology. In order to do that, a physical model is first presented to characterize the GB-induced transistor threshold voltage (V th)variations considering not only the number but also the position and orientation of each GB in 3-D space. The fast computation time of the proposed model makes it suitable for evaluation of GB-induced transistor Vthvariation in the early design phase. Furthermore, a self-consistent electro-thermal model that considers the effects of device geometry, substrate material, and stress conditions on NBTI is proposed. With the proposed modeling methodology, the significant impacts of device geometry, substrate, and supply voltage on NBTI in poly-Si TFTs are shown. From a circuit design perspective, a voltage programming pixel circuit is developed for active-matrix organic light emitting diode (AMOLED) displays for compensating the shift of Vth and mobility in driver TFTs as well as compensating the supply voltage degradation. In addition, a self-repair design methodology is proposed to compensate the GB-induced variations for liquid crystal displays (LCDs) and AMOLED displays. Based on the simulation results, the proposed circuit can decrease the required supply voltage by 20% without performance and yield degradation. In the final section of this dissertation, an optimization methodology for circuit-level reliability tests is explored. To effectively predict circuit lifetime, accelerated aging (i.e. elevated voltage and temperature) is commonly applied in circuit-level reliability tests, such as constant voltage stress (CVS) and ramp voltage stress (RVS) tests. However, due to the accelerated aging, shifting of dominant degradation mechanism might occur leading to the wrong lifetime prediction. To get around this issue, we proposed a technique to determine the proper stress range for accelerated aging tests
Backplane Circuit Design with Amorphous Silicon Thin-Film Transistors for Flexible Displays
In recent years, rapid advancement in LED fabrication has enabled the possibility of using GaN micro-LEDs to be the light media in a display panel. It has superior performance in many aspects when compared with OLED technology, such as high contrast, wide viewing angle, and low power consumption. These advantages have enabled a possibility of using micro-LED technology to realize flexible displays. Currently, OLEDs need high mobility low-temperature-poly-silicon (LTPS) TFTs to be the backplane driving circuit material because lower mobility TFTs are inadequate to drive OLEDs. However, LTPS TFTs have poor uniformity over a large area due to unpredictable grain sizes and require additional fabrication processes which prevent it from being integrated onto a large-area flexible platform. On the other hand, conventional amorphous silicon (a-Si:H) technology used on LCD panels have an edge in terms of uniformity over large-area and low-cost fabrication. Even though the field-effect mobility of a-Si:H TFTs is much less than LTPS technology, it is sufficient to power up micro-LEDs with decent pixel density, which is impossible with OLEDs. However, the nature of amorphous materials gives rise to electrical instability issues. The output current of a-Si:H TFTs gradually decreases over time under electrical stress, which results in dimmer micro-LEDs in pixels. Moreover, the lack of complementary p-type TFTs in a-Si:H limits the integration of driver and control circuits onto the flexible platform to realize a full "system-on-flex". To overcome such shortcomings of a-Si:H technologies, this thesis makes a contribution in providing a solution to compensate the output current degradation by a novel pixel circuit with simple control scheme, as well as bootstrapped logic circuits that can be used as row driver and control circuits on flexible substrates. The proposed compensation pixel and row driver circuits can be combined to facilitate the realization of a "system-on-flex" backplane for a display panel with a-Si:H and micro-LED technologies
An Ultra Low Power Digital to Analog Converter Optimized for Small Format LCD Applications
Liquid crystal displays (LCDs) for mobile applications present a unique design challenge. These small format displays can be found primarily in cell phones and PDAs which are devices that have particularly stringent power requirements. At the same time, the displays are increasing in resolution with every generation. This is creating demand for new LCD display technologies. The predominant amorphous thin film transistor technology is no longer feasible in the new high resolution small format screens due to the fact that the displays require too many connections to the driver and the aperture ratios do not allow high density displays.
New technologies such as low temperature polysilicon (LTPS) displays continue to shrink in size and increase in resolution. LTPS technology enables the display manufacturer to create relatively high quality transistors on the glass. This allows for a display architecture which integrates the gate driver on the glass. Newer LTPS LCDs also enable a high level of multiplexing the sources lines on the glass which allows for a much simpler connection to the display driver chip.
The electronic drivers for these display applications must adhere to strict power and area budgets. This work describes a low-power, area efficient, scalable, digital-to-analog conversion (DAC) integrated circuit architecture optimized for driving small format LCDs. The display driver is based on a twelve channel, 9-bit DAC driver. This architecture, suitable for % VGA resolution displays, exhibited a 2 MSPS conversion rate, less than 300 pW power dissipation per channel using a 5 V supply, and a die area of 0.042 mm per DAC. A new performance standard is set for DAC display drivers in joules per bit areal density
Amorphous Silicon Thin Film Transistor Models and Pixel Circuits for AMOLED Displays
Hydrogenated amorphous Silicon (a-Si:H) Thin Film Transistor (TFT) has many advantages and is one of the suitable choices to implement Active Matrix Organic Light-Emitting Diode (AMOLED) displays. However, the aging of a-Si:H TFT caused by electrical stress affects the stability of pixel performance. To solve this problem, following aspects are important: (1) compact device models and parameter extraction methods for TFT characterization and circuit simulation; (2) a method to simulate TFT aging by using circuit simulator so that its impact on circuit performance can be investigated by using circuit simulation; and (3) novel pixel circuits to compensate the impact of TFT aging on circuit performance. These challenges are addressed in this thesis.
A compact device model to describe the static and dynamic behaviors of a-Si:H TFT is presented. Several improvements were made for better accuracy, scalability, and convergence of TFT model. New parameter extraction methods with improved accuracy and consistency were also developed. The improved compact TFT model and new parameter extraction methods are verified by measurement results.
Threshold voltage shift (âVt) over stress time is the primary aging behavior of a-Si:H TFT under voltage stress. Circuit-level aging simulation is very useful in investigating and optimizing circuit stability. Therefore, a simulation method was developed for circuit-level âVt simulation. Besides, a âVt model which is compatible to circuit simulator was developed. The proposed method and model are verified by measurement results.
A novel pixel circuit using a-Si:H TFTs was developed to improve the stability of OLED drive current over stress time. The âVt of drive TFT caused by voltage stress is compensated by an incremental gate voltage generated by utilizing a âVt-dependent charge transfer from drive TFT to a TFT-based Metal-Insulator-Semiconductor (MIS) capacitor. A second MIS capacitor is used to inject positive charge to the gate of drive TFT to improve OLED drive current. The effectiveness of the proposed pixel circuit is verified by simulation and measurement results. The proposed pixel circuit is also compared to several conventional pixel circuits.4 month
Amorphous Silicon Thin Film Transistor Models and Pixel Circuits for AMOLED Displays
Hydrogenated amorphous Silicon (a-Si:H) Thin Film Transistor (TFT) has many advantages and is one of the suitable choices to implement Active Matrix Organic Light-Emitting Diode (AMOLED) displays. However, the aging of a-Si:H TFT caused by electrical stress affects the stability of pixel performance. To solve this problem, following aspects are important: (1) compact device models and parameter extraction methods for TFT characterization and circuit simulation; (2) a method to simulate TFT aging by using circuit simulator so that its impact on circuit performance can be investigated by using circuit simulation; and (3) novel pixel circuits to compensate the impact of TFT aging on circuit performance. These challenges are addressed in this thesis.
A compact device model to describe the static and dynamic behaviors of a-Si:H TFT is presented. Several improvements were made for better accuracy, scalability, and convergence of TFT model. New parameter extraction methods with improved accuracy and consistency were also developed. The improved compact TFT model and new parameter extraction methods are verified by measurement results.
Threshold voltage shift (âVt) over stress time is the primary aging behavior of a-Si:H TFT under voltage stress. Circuit-level aging simulation is very useful in investigating and optimizing circuit stability. Therefore, a simulation method was developed for circuit-level âVt simulation. Besides, a âVt model which is compatible to circuit simulator was developed. The proposed method and model are verified by measurement results.
A novel pixel circuit using a-Si:H TFTs was developed to improve the stability of OLED drive current over stress time. The âVt of drive TFT caused by voltage stress is compensated by an incremental gate voltage generated by utilizing a âVt-dependent charge transfer from drive TFT to a TFT-based Metal-Insulator-Semiconductor (MIS) capacitor. A second MIS capacitor is used to inject positive charge to the gate of drive TFT to improve OLED drive current. The effectiveness of the proposed pixel circuit is verified by simulation and measurement results. The proposed pixel circuit is also compared to several conventional pixel circuits.4 month
Recommended from our members
TFTs circuit simulation models and analogue building block designs
Building functional thin-film-transistor (TFT) circuits is crucial for applications such as wearable, implantable and transparent electronics. Therefore, developing a compact model of an emerging semiconductor material for accurate circuit simulation is the most fundamental requirement for circuit design. Further, unique analogue building blocks are needed due to the specific properties and non-idealities of TFTs.
This dissertation reviews the major developments in thin-film transistor (TFT) modelling for the computer-aided design (CAD) and simulation of circuits and systems. Following the progress in recent years on oxide TFTs, we have successfully developed a Verilog-AMS model called the CAMCAS model, which supports computer-aided circuit simulation of oxide-TFTs, with the potential to be extended to other types of TFT technology families.
For analogue applications, an accurate small signal model for thin film transistors (TFTs) is presented taking into account non-idealities such as contact resistance, parasitic capacitance, and threshold voltage shift to exhibit higher accuracy in comparison with the adapted CMOS model. The model is used to extract the zeros and poles of the frequency response in analogue circuits.
In particular, we consider the importance of device-circuit interactions (DCI) when designing thin film transistor circuits and systems and subsequently examine temperature- and process-induced variations and propose a way to evaluate the maximum achievable intrinsic performance of the TFT. This is aimed at determining when DCI becomes crucial for a specific application. Compensation methods are reviewed to show examples of how DCI is considered in the design of AMOLED displays.
Based on these design considerations, analogue building blocks including voltage and current references and differential amplifier stages have been designed to expand the analogue library specifically for TFT circuit design. The shift problem has been compensated based on unique circuit structures.
For a future generation of application, where ultra low power consumption is a critical requirement, we investigate the TFTâs subthreshold operation through examining several figures of merit including intrinsic gain (), transconductance efficiency () and cut-off frequency (). Here, we consider design sensitivity for biasing circuitry and the impact of device variations on low power circuit behaviour.Cambridge Commonwealth, European & International Trust, Chinese Scholarship Counci