A 5-Gb/s 66 dB CMOS variable-gain amplifier with reconfigurable DC-offset cancellation for multi-standard applications

This paper proposes a variable gain amplifier (VGA) with reconfigurable DC-offset cancellation (DCOC) for multi-standard applications. In this design, a cell-based design method and some bandwidth extension technologies are adopted to achieve a high data rate and a wide gain control range simultaneously. In addition, the DCOC having a tunable lower-cutoff frequency can make an optimum compromise between BER and SNR according to the specified baseband standard. The measurements show that the VGA achieves a gain control range from −6 dB to 60 dB, a bandwidth beyond 3 GHz, and a tunable lower-cutoff frequency from 0 to 300 kHz. When entering a 2 23 −1 pseudo-random bit sequence signal at 5 Gb/s, the VGA consumes 17 mW from a 1.2-V supply and the output data peak-to-peak jitter is less than 40 ps. The VGA is fabricated in a 90-nm CMOS process with a chip size (including all pads) of 0.52×0.5 mm 2

Design of a variable gain amplifier for an ultrawideband receiver

A fully differential CMOS variable gain amplifier (VGA) has been designed for an ultra-wideband receiver. The VGA comprises of two variable gain stages followed by a post amplifier stage. The interface between the digital control block and the analog VGA is formed by a digital-to-analog converter and an exponential voltage generator. The gain of the VGA varies dB-linearly from 0 to 52 dB with respect to the control voltage. The VGA is operated in open loop with a bandwidth greater than 500 MHz throughout the gain range to cater to the requirements of the ultra-wideband system. The noise-to-power ratio of the VGA is -23.9 dB for 1Vp-p differential input signal in the low gain setting, and the equivalent input referred noise is 1.01 V2 for the high gain setting. All three stages use common mode feedback to fix and stabilize the output DC levels at a particular voltage depending on the input common-mode requirement of the following stage. DC offset cancellation has also been incorporated to minimize the input referred DC offset caused by systematic and random mismatches in the circuit. Compensation schemes to minimize the effects of temperature, supply and process variations have been included in the design. The circuit has been designed in 0.18??m CMOS technology, and the post layout simulations are in good agreement with the schematic simulations

Realization of a ROIC for 72x4 PV-IR detectors

Silicon Readout Integrated Circuits (ROIC) for HgCdTe Focal Plane Arrays of 1x4 and 72x4 photovoltaic detectors are represented. The analog circuit blocks are completely identical for both, while the digital control circuit is modified to take into account the larger array size. The manufacturing technology is 0.35μm, double poly-Si, three-metal CMOS process. ROIC structure includes four elements TDI functioning with a super sampling rate of 3, bidirectional scanning, dead pixel de-selection, automatic gain adjustment in response to pixel deselection besides programmable four gain setting (up to 2.58pC storage), and programmable integration time. ROIC has four outputs with a dynamic range of 2.8V (from 1.2V to 4V) for an output load of 10pF capacitive in parallel with 1MΩ resistance, and operates at a clock frequency of 5 MHz. The input referred noise is less than 1037 μV with 460 fF integration capacitor, corresponding to 2978 electrons

CMOS design of chaotic oscillators using state variables: a monolithic Chua's circuit

This paper presents design considerations for monolithic implementation of piecewise-linear (PWL) dynamic systems in CMOS technology. Starting from a review of available CMOS circuit primitives and their respective merits and drawbacks, the paper proposes a synthesis approach for PWL dynamic systems, based on state-variable methods, and identifies the associated analog operators. The GmC approach, combining quasi-linear VCCS's, PWL VCCS's, and capacitors is then explored regarding the implementation of these operators. CMOS basic building blocks for the realization of the quasi-linear VCCS's and PWL VCCS's are presented and applied to design a Chua's circuit IC. The influence of GmC parasitics on the performance of dynamic PWL systems is illustrated through this example. Measured chaotic attractors from a Chua's circuit prototype are given. The prototype has been fabricated in a 2.4- mu m double-poly n-well CMOS technology, and occupies 0.35 mm/sup 2/, with a power consumption of 1.6 mW for a +or-2.5-V symmetric supply. Measurements show bifurcation toward a double-scroll Chua's attractor by changing a bias current

A design tool for high-resolution high-frequency cascade continuous- time Σ∆ modulators

Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, SpainThis paper introduces a CAD methodology to assist the de signer in the implementation of continuous-time (CT) cas- cade Σ∆ modulators. The salient features of this methodology ar e: (a) flexible behavioral modeling for optimum accuracy- efficiency trade-offs at different stages of the top-down synthesis process; (b) direct synthesis in the continuous-time domain for minimum circuit complexity and sensitivity; a nd (c) mixed knowledge-based and optimization-based architec- tural exploration and specification transmission for enhanced circuit performance. The applicability of this methodology will be illustrated via the design of a 12 bit 20 MHz CT Σ∆ modulator in a 1.2V 130nm CMOS technology.Ministerio de Ciencia y Educación TEC2004-01752/MICMinisterio de Industria, Turismo y Comercio FIT-330100-2006-134 SPIRIT Projec

Analysis of circuit conditions for optimum intermodulation and gain in bipolar cascomp amplifiers with non-ideal error correction

The cascoded-compensation or ‘Cascomp’ amplifier offers excellent distortion reduction and thermal distortion rejection, but has not seen widespread use because of a limited gain and increased complexity compared with other topologies. The original theory showed that with the addition of an ideal error amplifier the circuit will completely compensate distortion for suitably chosen degeneration and bias values. This research presents a new, rigorous mathematical proof for conditions of compensation. The authors further develop the proof to include the non-idealities of the error amplifier. It is shown that there exists a second bias point, not exposed by the original analysis that offers improved gain while maintaining distortion cancellation. By reducing the error amplifier degeneration resistance, one can increase a Cascomp circuit's overall gain by several dB while maintaining theoretically perfect distortion compensation. A robust bias point is proposed, which takes the advantage of this new theory by optimising circuit values resulting in a comparatively broader and deeper third-order distortion null. The proposed theory is confirmed with simulation and measurement that show agreement within the bounds of process and component error limits

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

Field-effect transistors as dc amplifiers

Field effect transistors as direct current amplifier