Impact of intrinsic parameter fluctuations in ultra-thin body silicon-on-insulator MOSFET on 6-transistor SRAM cell

As CMOS device dimensions are being aggressively scaled, the device characteristic must be assessed against fundamental physical limits. Nanoscale device modelling and statistical circuit analysis is needed to provide designer with ability to explore innovative new MOSFET devices as well as understanding the limits of the scaling process. This work introduces a systematic simulation methodology to investigate the impact of intrinsic parameter fluctuation for a novel Ultra-Thin-Body (UTB) Silicon-on-Insulator (SOI) transistor on the corresponding device and circuits. It provides essential link between physical device-level numerical simulation and circuit-level simulation. A systematic analysis of the effects of random discrete dopants, body thickness variations and line edge roughness on a well scaled 10 nm, 7.5 nm and 5 nm channel length UTB-SOI MOSFET is performed. To fully realise the performance benefits of UTB-SOI based SRAM cells a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuations information into the compact model is developed. The impact of intrinsic parameter fluctuations on the stability and performance of 6T SRAM has been investigated. A comparison with the behaviour of a 6T SRAM based on a conventional 35 nm MOSFET is also presented

Nano-intrinsic security primitives for internet of everything

With the advent of Internet-enabled electronic devices and mobile computer systems, maintaining data security is one of the most important challenges in modern civilization. The innovation of physically unclonable functions (PUFs) shows great potential for enabling low-cost low-power authentication, anti-counterfeiting and beyond on the semiconductor chips. This is because secrets in a PUF are hidden in the randomness of the physical properties of desirably identical devices, making it extremely difficult, if not impossible, to extract them. Hence, the basic idea of PUF is to take advantage of inevitable non-idealities in the physical domain to create a system that can provide an innovative way to secure device identities, sensitive information, and their communications. While the physical variation exists everywhere, various materials, systems, and technologies have been considered as the source of unpredictable physical device variation in large scales for generating security primitives. The purpose of this project is to develop emerging solid-state memory-based security primitives and examine their robustness as well as feasibility. Firstly, the author gives an extensive overview of PUFs. The rationality, classification, and application of PUF are discussed. To objectively compare the quality of PUFs, the author formulates important PUF properties and evaluation metrics. By reviewing previously proposed constructions ranging from conventional standard complementary metal-oxide-semiconductor (CMOS) components to emerging non-volatile memories, the quality of different PUFs classes are discussed and summarized. Through a comparative analysis, emerging non-volatile redox-based resistor memories (ReRAMs) have shown the potential as promising candidates for the next generation of low-cost, low-power, compact in size, and secure PUF. Next, the author presents novel approaches to build a PUF by utilizing concatenated two layers of ReRAM crossbar arrays. Upon concatenate two layers, the nonlinear structure is introduced, and this results in the improved uniformity and the avalanche characteristic of the proposed PUF. A group of cell readout method is employed, and it supports a massive pool of challenge-response pairs of the nonlinear ReRAM-based PUF. The non-linear PUF construction is experimentally assessed using the evaluation metrics, and the quality of randomness is verified using predictive analysis. Last but not least, random telegraph noise (RTN) is studied as a source of entropy for a true random number generation (TRNG). RTN is usually considered a disadvantageous feature in the conventional CMOS designs. However, in combination with appropriate readout scheme, RTN in ReRAM can be used as a novel technique to generate quality random numbers. The proposed differential readout-based design can maintain the quality of output by reducing the effect of the undesired noise from the whole system, while the controlling difficulty of the conventional readout method can be significantly reduced. This is advantageous as the differential readout circuit can embrace the resistance variation features of ReRAMs without extensive pre-calibration. The study in this thesis has the potential to enable the development of cost-efficient and lightweight security primitives that can be integrated into modern computer mobile systems and devices for providing a high level of security

Simulation of charge-trapping in nano-scale MOSFETs in the presence of random-dopants-induced variability

The growing variability of electrical characteristics is a major issue associated with continuous downscaling of contemporary bulk MOSFETs. In addition, the operating conditions brought about by these same scaling trends have pushed MOSFET degradation mechanisms such as Bias Temperature Instability (BTI) to the forefront as a critical reliability threat. This thesis investigates the impact of this ageing phenomena, in conjunction with device variability, on key MOSFET electrical parameters. A three-dimensional drift-diffusion approximation is adopted as the simulation approach in this work, with random dopant fluctuations—the dominant source of statistical variability—included in the simulations. The testbed device is a realistic 35 nm physical gate length n-channel conventional bulk MOSFET. 1000 microscopically different implementations of the transistor are simulated and subjected to charge-trapping at the oxide interface. The statistical simulations reveal relatively rare but very large threshold voltage shifts, with magnitudes over 3 times than that predicted by the conventional theoretical approach. The physical origin of this effect is investigated in terms of the electrostatic influences of the random dopants and trapped charges on the channel electron concentration. Simulations with progressively increased trapped charge densities—emulating the characteristic condition of BTI degradation—result in further variability of the threshold voltage distribution. Weak correlations of the order of 10-2 are found between the pre-degradation threshold voltage and post-degradation threshold voltage shift distributions. The importance of accounting for random dopant fluctuations in the simulations is emphasised in order to obtain qualitative agreement between simulation results and published experimental measurements. Finally, the information gained from these device-level physical simulations is integrated into statistical compact models, making the information available to circuit designers

Asynchronous techniques for new generation variation-tolerant FPGA

PhD ThesisThis thesis presents a practical scenario for asynchronous logic implementation that would benefit the modern Field-Programmable Gate Arrays (FPGAs) technology in improving reliability. A method based on Asynchronously-Assisted Logic (AAL) blocks is proposed here in order to provide the right degree of variation tolerance, preserve as much of the traditional FPGAs structure as possible, and make use of asynchrony only when necessary or beneficial for functionality. The newly proposed AAL introduces extra underlying hard-blocks that support asynchronous interaction only when needed and at minimum overhead. This has the potential to avoid the obstacles to the progress of asynchronous designs, particularly in terms of area and power overheads. The proposed approach provides a solution that is complementary to existing variation tolerance techniques such as the late-binding technique, but improves the reliability of the system as well as reducing the design’s margin headroom when implemented on programmable logic devices (PLDs) or FPGAs. The proposed method suggests the deployment of configurable AAL blocks to reinforce only the variation-critical paths (VCPs) with the help of variation maps, rather than re-mapping and re-routing. The layout level results for this method's worst case increase in the CLB’s overall size only of 6.3%. The proposed strategy retains the structure of the global interconnect resources that occupy the lion’s share of the modern FPGA’s soft fabric, and yet permits the dual-rail iv completion-detection (DR-CD) protocol without the need to globally double the interconnect resources. Simulation results of global and interconnect voltage variations demonstrate the robustness of the method

Variability-Aware Circuit Performance Optimisation Through Digital Reconfiguration

This thesis proposes optimisation methods for improving the performance of circuits imple- mented on a custom reconfigurable hardware platform with knowledge of intrinsic variations, through the use of digital reconfiguration. With the continuing trend of transistor shrinking, stochastic variations become first order effects, posing a significant challenge for device reliability. Traditional device models tend to be too conservative, as the margins are greatly increased to account for these variations. Variation-aware optimisation methods are then required to reduce the performance spread caused by these substrate variations. The Programmable Analogue and Digital Array (PAnDA) is a reconfigurable hardware plat- form which combines the traditional architecture of a Field Programmable Gate Array (FPGA) with the concept of configurable transistor widths, and is used in this thesis as a platform on which variability-aware circuits can be implemented. A model of the PAnDA architecture is designed to allow for rapid prototyping of devices, making the study of the effects of intrinsic variability on circuit performance – which re- quires expensive statistical simulations – feasible. This is achieved by means of importing statistically-enhanced transistor performance data from RandomSPICE simulations into a model of the PAnDA architecture implemented in hardware. Digital reconfiguration is then used to explore the hardware resources available for performance optimisation. A bio-inspired optimisation algorithm is used to explore the large solution space more efficiently. Results from test circuits suggest that variation-aware optimisation can provide a significant reduction in the spread of the distribution of performance across various instances of circuits, as well as an increase in performance for each. Even if transistor geometry flexibility is not available, as is the case of traditional architectures, it is still possible to make use of the substrate variations to reduce spread and increase performance by means of function relocation

FPGA-based architectures for next generation communications networks

This engineering doctorate concerns the application of Field Programmable Gate Array (FPGA) technology to some of the challenges faced in the design of next generation communications networks. The growth and convergence of such networks has fuelled demand for higher bandwidth systems, and a requirement to support a diverse range of payloads across the network span. The research which follows focuses on the development of FPGA-based architectures for two important paradigms in contemporary networking - Forward Error Correction and Packet Classification. The work seeks to combine analysis of the underlying algorithms and mathematical techniques which drive these applications, with an informed approach to the design of efficient FPGA-based circuits