8 research outputs found

    Visual Analytics to Support Atomistic Simulations Design

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    Nowadays, complex simulations of a variety of processes are extensively used in academia and industry. Particularly in academia, powerful scientific software tools are constantly developed to simulate complex systems; for instance, simulations of quantum transport using the non-equilibrium greens Function formalism. The potential impact of these scientific tools in industry is huge, but it is hindered by the lack of usability of the software by those who are not deeply familiar with it. Visual analytics is a new field that has shown the positive impact of interactive visualizations in software usability and the cognitive process of the user. This research investigates whether the implementation of interactive visual aids also improves the usability and the cognitive processes of research codes users, particularly those used for simulation design. To accomplish this goal, this study defines a framework for simulation design in scientific research, identifies the stages in which visual aids can be implemented to increase usability, and implements an interactive visualization system (NemoViz). NEMO5, a tool for designing atomistic simulation, is used as a case study to measure the effectiveness, efficiency, and user satisfaction of the use of visual aids in scientific simulation design. The results from this research provide a framework of reference for development of user-friendly simulation design tools, and will shed light on strategies that scientific developers might implement to broaden the impact of their simulation codes

    I-Light Symposium 2005 Proceedings

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    I-Light was made possible by a special appropriation by the State of Indiana. The research described at the I-Light Symposium has been supported by numerous grants from several sources. Any opinions, findings and conclusions, or recommendations expressed in the 2005 I-Light Symposium Proceedings are those of the researchers and authors and do not necessarily reflect the views of the granting agencies.Indiana University Office of the Vice President for Research and Information Technology, Purdue University Office of the Vice President for Information Technology and CI

    Emerging Materials & Technologies

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    The book focuses on four exemplified EM&Ts areas as results of the methods, gaps and issues related to their teaching methods. The four areas are: Experimental Wood-Based EM&Ts, Interactive Connected Smart (ICS) Materials Wearable-based, Carbon-based & Nanotech EM&Ts and Advanced Growing. It provides the setting up of a common/ novel method to teaching EM&Ts: to create new professional in young students, and to develop new guidelines and approach

    Investigation of Interconnect and Device Designs for Emerging Post-MOSFET and Beyond Silicon Technologies

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    Title from PDF of title page viewed May 31, 2017Dissertation advisor: Masud H. ChowdhuryVitaIncludes bibliographical references (pages 94-108)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2016The integrated circuit industry has been pursuing Moore’s curve down to deep nanoscale dimensions that would lead to the anticipated delivery of 100 billion transistors on a 300 mm² die operating below 1V supply in the next 5-10 years. However, the grand challenge is to reliably and efficiently take the full advantage of the unprecedented computing power offered by the billions of nanoscale transistors on a single chip. To mitigate this challenge, the limitations of both the interconnecting wires and semiconductor devices in integrated circuits have to be addressed. At the interconnect level, the major challenge in current high density integrated circuit is the electromagnetic and electrostatic impacts in the signal carrying lines. Addressing these problems require better analysis of interconnect resistance, inductance, and capacitance. Therefore, this dissertation has proposed a new delay model and analyzed the time-domain output response of complex poles, real poles, and double poles for resistance-inductance capacitance interconnect network based on a second order approximate transfer function. Both analytical models and simulation results show that the real poles model is much faster than the complex poles model, and achieves significantly higher accuracy in order to characterize the overshoot and undershoot of the output responses. On the other hand, the semiconductor industry is anticipating that within a decade silicon devices will be unable to meet the demands at nanoscale due to dimension and material scaling. Recently, molybdenum disulfide (MoS₂) has emerged as a new super material to replace silicon in future semiconductor devices. Besides, conventional field effect transistor technology is also reaching its thermodynamic limit. Breaking this thermal and physical limit requires adoption of new devices based on tunneling mechanism. Keeping the above mentioned trends, this dissertation also proposed a multilayer MoS₂ channel-based tunneling transistor and identifies the fundamental parameters and design specifications that need to be optimized in order to achieve higher ON-currents. A simple analytical model of the proposed device is derived by solving the time-independent Schrodinger equation. It is analytically proven that the proposed device can offer an ON-current of 80 A/m, a subthreshold swing (S) of 9.12 mV/decade, and a / ratio of 10¹².Introduction -- Previous models on interconnect designs -- Proposed delay model for interconnect design -- Investigation of tunneling for field effect transistor -- Study of molybdenum disulfide for FET applications -- Proposed molybdenum disulfide based tunnel transistor -- Conclusion -- Appendix A. Derivation of time delay model -- Appendix B. Derivation of tunneling current model Appendix C. Derivation of subthreshold swing mode

    From RF-Microsystem Technology to RF-Nanotechnology

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    The RF microsystem technology is believed to introduce a paradigm switch in the wireless revolution. Although only few companies are to date doing successful business with RF-MEMS, and on a case-by-case basis, important issues need yet to be addressed in order to maximize yield and performance stability and hence, outperform alternative competitive technologies (e.g. ferroelectric, SoS, SOI,…). Namely the behavior instability associated to: 1) internal stresses of the free standing thin layers (metal and/or dielectric) and 2) the mechanical contact degradation, be it ohmic or capacitive, which may occur due to low forces, on small areas, and while handling severe current densities.The investigation and understanding of these complex scenario, has been the core of theoretical and experimental investigations carried out in the framework of the research activity that will be presented here. The reported results encompass activities which go from coupled physics (multiphysics) modeling, to the development of experimental platforms intended to tackles the underlying physics of failure. Several original findings on RF-MEMS reliability in particular with respect to the major failure mechanisms such as dielectric charging, metal contact degradation and thermal induced phenomena have been obtained. The original use of advanced experimental setup (surface scanning microscopy, light interferometer profilometry) has allowed the definition of innovative methodology capable to isolate and separately tackle the different degradation phenomena under arbitrary working conditions. This has finally permitted on the one hand to shed some light on possible optimization (e.g. packaging) conditions, and on the other to explore the limits of microsystem technology down to the nanoscale. At nanoscale indeed many phenomena take place and can be exploited to either enhance conventional functionalities and performances (e.g. miniaturization, speed or frequency) or introduce new ones (e.g. ballistic transport). At nanoscale, moreover, many phenomena exhibit their most interesting properties in the RF spectrum (e.g. micromechanical resonances). Owing to the fact that today’s minimum manufacturable features have sizes comparable with the fundamental technological limits (e.g. surface roughness, metal grain size, …), the next generation of smart systems requires a switching paradigm on how new miniaturized components are conceived and fabricated. In fact endowed by superior electrical and mechanical performances, novel nanostructured materials (e.g. carbon based, as carbon nanotube (CNT) and graphene) may provide an answer to this endeavor. Extensively studied in the DC and in the optical range, the studies engaged in LAAS have been among the first to target microwave and millimiterwave transport properties in carbon-based material paving the way toward RF nanodevices. Preliminary modeling study performed on original test structures have highlighted the possibility to implement novel functionalities such as the coupling between the electromagnetic (RF) and microelectromechanical energy in vibrating CNT (toward the nanoradio) or the high speed detection based on ballistic transport in graphene three-terminal junction (TTJ). At the same time these study have contributed to identify the several challenges still laying ahead such as the development of adequate design and modeling tools (ballistic/diffusive, multiphysics and large scale factor) and practical implementation issues such as the effects of material quality and graphene-metal contact on the electrical transport. These subjects are the focus of presently on-going and future research activities and may represent a cornerstone of future wireless applications from microwave up to the THz range

    Using nanoHUB.org for teaching and learning nanoelectronic devices in materials engineering

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    Comunicación presentada al "Global Engineering Education Conference (EDUCON)" celebrado en Marrakech (Marruecos) del 17 al 20 de Abril del 2012.This paper presents an educational methodology that uses the computational resources available in the nanoHUB.org online research and education platform. To this end, a number of software tools provided by nanoHUB.org have been incorporated as part of the practical lab exercises and linked to an e-learning virtual environment of a course on Electronic Materials, with emphasis on Nanoelectronic devices. The activities carried out during the course allowed students to enhance their understanding of those theoretical concepts dealing with Nanoelectronic materials and devices, thus becoming more motivated and satisfied. As an application and example, a set of experiences carried out by students is described. These experiences cover different Nanoelectronic materials and devices, going from physical and theoretical principles to device simulation. The proposed method has been applied to an undergraduate course, although it could be extended also to master students enrolled in courses dealing with materials science and engineering.This work has been supported in part by the Spanish Ministry of Science and Innovation (with support from the European Regional Development Fund) under contracts TEC2007-67247-C02-01/MIC, TEC2010-14825/MIC, in part by the Consejería de Innovación, Ciencia y Empresa, under contract TIC-2532 and in part by the I Plan Propio de Docencia de la U. de Sevilla, LabCMA2010 project.Peer Reviewe

    XSEDE: eXtreme Science and Engineering Discovery Environment Third Quarter 2012 Report

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    The Extreme Science and Engineering Discovery Environment (XSEDE) is the most advanced, powerful, and robust collection of integrated digital resources and services in the world. It is an integrated cyberinfrastructure ecosystem with singular interfaces for allocations, support, and other key services that researchers can use to interactively share computing resources, data, and expertise.This a report of project activities and highlights from the third quarter of 2012.National Science Foundation, OCI-105357
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