Using a Second Order Sigma-Delta Control to Improve the Performance of Metal-Oxide Gas Sensors

Controls of surface potential have been proposed to accelerate the time response of MOX gas sensors. These controls use temperature modulations and a feedback loop based on first-order sigma-delta modulators to keep constant the surface potential. Changes in the surrounding gases, therefore, must be compensated by average temperature produced by the control loop, which is the new output signal. The purpose of this paper is to present a second order sigma-delta control of the surface potential for gas sensors. With this new control strategy, it is possible to obtain a second order zero of the quantization noise in the output signal. This provides a less noisy control of the surface potential, while at the same time some undesired effects of first order modulators, such as the presence of plateaus, are avoided. Experiments proving these performance improvements are presented using a gas sensor made of tungsten oxide nanowires. Plateau avoidance and second order noise shaping is shown with ethanol measurements.Postprint (author's final draft

Analysis of the dynamics of an active control of the surface potential in metal oxide gas sensors

Postprint (author's final draft

Sigma-Delta control of charge trapping in heterogeneous devices

Dielectric charging represents a major reliability issue in a variety of semiconductor devices. The accumulation of charge in dielectric layers of a device often alters its performance, affecting its circuital features and even reducing its effective lifetime. Although several contributions have been made in order to mitigate the undesired effects of charge trapping on circuit performance, dielectric charge trapping still remains an open reliability issue in several applications. The research work underlying this Thesis mainly focuses on the design, analysis and experimental validation of control strategies to compensate dielectric charging in heterogeneous devices. These control methods are based on the application of specifically designed voltage waveforms that produce complementary effects on the charge dynamics. Using sigma-delta loops, these controls allow to set and maintain, within some limits, the net trapped charge in the dielectric to desired levels that can be changed with time. This allows mitigating long-term reliability issues such as capacitance-voltage (C-V) shifts in MOS and MIM capacitors. Additionally, the bit streams generated by the control loops provide real-time information on the evolution of the trapped charge. The proposed controls also allow compensating the effects of the charge trapping due to external disturbances such as radiation. This has been demonstrated experimentally with MOS capacitors subjected to various types of ionizing radiation (X-rays and gamma rays) while a charge control is being applied. This approach opens up the possibility of establishing techniques for active compensation of radiation-induced charge in MOS structures as well as a new strategy for radiation sensing. A modeling strategy to characterize the dynamics of the dielectric charge in MOS capacitors is also presented. The diffusive nature of the charge trapping phenomena allows their behavioral characterization using Diffusive Representation tools. The experiments carried out demonstrate a very good matching between the predictions of the model and the experimental results obtained. The time variations in the charge dynamics due to changes in the volatges applied and/or due to external disturbances have been also investigated and modeled. Moreover, the charge dynamics of MOS capacitors under sigma-delta control is analyzed using the tools of Sliding Mode Controllers for an infinite sampling frequency approximation. A phenomenological analytical model is obtained which allows to predict and analyze the sequence of control signals. This model has been successfully validated with experimental data. Finally, the above control strategies are extended to other devices such as eMIM capacitors and perovskite solar cells. Preliminary results including open loop and closed loop control experiments are presented. These results demonstrate that the application of the controls allows to set and stabilize both the C-V characteristic of an eMIM capacitor and the current-voltage characteristic (J-V) of a perovskite solar cell.La carga atrapada en dieléctricos suele implicar un problema importante de fiabilidad en muchos dispositivos semiconductores. La acumulación de dicha carga, normalmente provocada por las tensiones aplicadas durante el uso del dispositivo, suele alterar el rendimiento de éste con el tiempo, afectar sus prestaciones a nivel de circuital e, incluso, reducir su vida útil. Aunque durante años se han realizado muchos trabajos para mitigar sus efectos no deseados, sobre todo a nivel circuital, la carga atrapada en dieléctricos sigue siendo un problema abierto que frena la aplicabilidad práctica de algunos dispositivos. El trabajo de investigación realizado en esta Tesis se centra principalmente en el diseño, análisis y validación experimental de estrategias de control para compensar la carga atrapada en dieléctricos de diversos tipos de dispositivos, incluyendo condensadores MOS, condensadores MIM fabricados con nanotecnología y dispositivos basados en perovskitas. Los controles propuestos se basan en utilizar formas de onda de tensión, específicamente diseñadas, que producen efectos complementarios en la dinámica de la carga. Mediante el uso de lazos sigma-delta, estos controles permiten establecer y mantener, dentro de unos límites, la carga neta atrapada en el dieléctrico a valores prefijados, que pueden cambiarse con el tiempo. Esto permite mitigar problemas de fiabilidad a largo plazo como por ejemplo las derivas de la curva capacidad-tensión (C-V) en condensadores MOS y MIM. Adicionalmente, las tramas de bits generadas por los lazos de control proporcionan información en tiempo real sobre la evolución de la carga. Los controles propuestos permiten también compensar los efectos de la carga atrapada en dieléctricos debida a perturbaciones externas como la radiación. Esto se ha demostrado experimentalmente con condesadores MOS sometidos a diversos tipos de radiación ionizante (rayos X y gamma) mientras se les aplicaba un control de carga. Este resultado abre la posibilidad tanto de establecer técnicas de compensación activa de carga inducida por radiación en estructuras MOS, como una nueva estrategia de sensado de radiación. Se presenta también una estrategia de modelado para caracterizar la dinámica de la carga dieléctrica en condensadores MOS. La naturaleza difusiva de los fenómenos de captura y eliminación de carga en dieléctricos permite caracterizar dichos fenómenos empleando herramientas de Representación Difusiva. Los experimentos realizados demuestran una muy buena correspondencia entre las predicciones del modelo y los resultados experimentales obtenidos. Se muestra también como las variaciones temporales de los modelos son debidas a cambios en las formas de onda de actuación del dispositivo y/o a perturbaciones externas. Además, la dinámica de carga en condensadores MOS bajo control sigma-delta se analiza utilizando herramientas de control en modo deslizante (SMC), considerando la aproximación de frecuencia de muestreo infinita. Con ello se obtiene un modelo analítico simplificado que permite predecir y analizar con éxito la secuencia de señales de control. Este modelo se ha validado satisfactoriamente con datos experimentales. Finalmente, las estrategias de control anteriores se han extendido a otros dispositivos susceptibles de sufrir efectos de carga atrapada que pueden afectar su fiabilidad. Así, se han llevado a cabo experimentos preliminares cuyos resultados demuestran que la aplicación de controles de carga permite controlar y estabilizar la característica C-V de un condensador eMIM y la característica corriente-tensión (J-V) de una célula solar basada en perovskitas

Sigma-Delta control of charge trapping in heterogeneous devices

Dielectric charging represents a major reliability issue in a variety of semiconductor devices. The accumulation of charge in dielectric layers of a device often alters its performance, affecting its circuital features and even reducing its effective lifetime. Although several contributions have been made in order to mitigate the undesired effects of charge trapping on circuit performance, dielectric charge trapping still remains an open reliability issue in several applications. The research work underlying this Thesis mainly focuses on the design, analysis and experimental validation of control strategies to compensate dielectric charging in heterogeneous devices. These control methods are based on the application of specifically designed voltage waveforms that produce complementary effects on the charge dynamics. Using sigma-delta loops, these controls allow to set and maintain, within some limits, the net trapped charge in the dielectric to desired levels that can be changed with time. This allows mitigating long-term reliability issues such as capacitance-voltage (C-V) shifts in MOS and MIM capacitors. Additionally, the bit streams generated by the control loops provide real-time information on the evolution of the trapped charge. The proposed controls also allow compensating the effects of the charge trapping due to external disturbances such as radiation. This has been demonstrated experimentally with MOS capacitors subjected to various types of ionizing radiation (X-rays and gamma rays) while a charge control is being applied. This approach opens up the possibility of establishing techniques for active compensation of radiation-induced charge in MOS structures as well as a new strategy for radiation sensing. A modeling strategy to characterize the dynamics of the dielectric charge in MOS capacitors is also presented. The diffusive nature of the charge trapping phenomena allows their behavioral characterization using Diffusive Representation tools. The experiments carried out demonstrate a very good matching between the predictions of the model and the experimental results obtained. The time variations in the charge dynamics due to changes in the volatges applied and/or due to external disturbances have been also investigated and modeled. Moreover, the charge dynamics of MOS capacitors under sigma-delta control is analyzed using the tools of Sliding Mode Controllers for an infinite sampling frequency approximation. A phenomenological analytical model is obtained which allows to predict and analyze the sequence of control signals. This model has been successfully validated with experimental data. Finally, the above control strategies are extended to other devices such as eMIM capacitors and perovskite solar cells. Preliminary results including open loop and closed loop control experiments are presented. These results demonstrate that the application of the controls allows to set and stabilize both the C-V characteristic of an eMIM capacitor and the current-voltage characteristic (J-V) of a perovskite solar cell.La carga atrapada en dieléctricos suele implicar un problema importante de fiabilidad en muchos dispositivos semiconductores. La acumulación de dicha carga, normalmente provocada por las tensiones aplicadas durante el uso del dispositivo, suele alterar el rendimiento de éste con el tiempo, afectar sus prestaciones a nivel de circuital e, incluso, reducir su vida útil. Aunque durante años se han realizado muchos trabajos para mitigar sus efectos no deseados, sobre todo a nivel circuital, la carga atrapada en dieléctricos sigue siendo un problema abierto que frena la aplicabilidad práctica de algunos dispositivos. El trabajo de investigación realizado en esta Tesis se centra principalmente en el diseño, análisis y validación experimental de estrategias de control para compensar la carga atrapada en dieléctricos de diversos tipos de dispositivos, incluyendo condensadores MOS, condensadores MIM fabricados con nanotecnología y dispositivos basados en perovskitas. Los controles propuestos se basan en utilizar formas de onda de tensión, específicamente diseñadas, que producen efectos complementarios en la dinámica de la carga. Mediante el uso de lazos sigma-delta, estos controles permiten establecer y mantener, dentro de unos límites, la carga neta atrapada en el dieléctrico a valores prefijados, que pueden cambiarse con el tiempo. Esto permite mitigar problemas de fiabilidad a largo plazo como por ejemplo las derivas de la curva capacidad-tensión (C-V) en condensadores MOS y MIM. Adicionalmente, las tramas de bits generadas por los lazos de control proporcionan información en tiempo real sobre la evolución de la carga. Los controles propuestos permiten también compensar los efectos de la carga atrapada en dieléctricos debida a perturbaciones externas como la radiación. Esto se ha demostrado experimentalmente con condesadores MOS sometidos a diversos tipos de radiación ionizante (rayos X y gamma) mientras se les aplicaba un control de carga. Este resultado abre la posibilidad tanto de establecer técnicas de compensación activa de carga inducida por radiación en estructuras MOS, como una nueva estrategia de sensado de radiación. Se presenta también una estrategia de modelado para caracterizar la dinámica de la carga dieléctrica en condensadores MOS. La naturaleza difusiva de los fenómenos de captura y eliminación de carga en dieléctricos permite caracterizar dichos fenómenos empleando herramientas de Representación Difusiva. Los experimentos realizados demuestran una muy buena correspondencia entre las predicciones del modelo y los resultados experimentales obtenidos. Se muestra también como las variaciones temporales de los modelos son debidas a cambios en las formas de onda de actuación del dispositivo y/o a perturbaciones externas. Además, la dinámica de carga en condensadores MOS bajo control sigma-delta se analiza utilizando herramientas de control en modo deslizante (SMC), considerando la aproximación de frecuencia de muestreo infinita. Con ello se obtiene un modelo analítico simplificado que permite predecir y analizar con éxito la secuencia de señales de control. Este modelo se ha validado satisfactoriamente con datos experimentales. Finalmente, las estrategias de control anteriores se han extendido a otros dispositivos susceptibles de sufrir efectos de carga atrapada que pueden afectar su fiabilidad. Así, se han llevado a cabo experimentos preliminares cuyos resultados demuestran que la aplicación de controles de carga permite controlar y estabilizar la característica C-V de un condensador eMIM y la característica corriente-tensión (J-V) de una célula solar basada en perovskitas.Postprint (published version

Synthesis and gas sensing properties of inorganic semiconducting, p-n heterojunction nanomaterials

En aquesta tesis utilitzant principalment Aerosol Assited Chemical Vapor Deposition, AACVD, com a metodologia de síntesis d'òxid de tungstè nanoestructurat s'han fabricat diferents sensors de gasos. Per tal d'estudiar la millora en la selectivitat i la sensibilitat dels sensors de gasos basats en òxid de tungstè aquest s'han decorat, via AACVD, amb nanopartícules d'altres òxids metàl·lics per a crear heterojuncions per tal d'obtenir un increment en la sensibilitat electrònica, les propietats químiques del material o bé ambdues. En particular, s'han treballat en diferents sensors de nanofils d'òxid de tungstè decorats amb nanopartícules d'òxid de níquel, òxid de cobalt i òxid d'iridi resultant en sensors amb un gran increment de resposta i selectivitat cap al sulfur d'hidrogen, per a l'amoníac i per a l'òxid de nitrogen respectivament a concentracions traça. A més a més, s'han estudiat els mecanismes de reacció que tenen lloc entre les espècies d'oxigen adsorbides a la superfície del sensor quan interactua amb un gas. I també s'ha treballat en intentar controlar el potencial de superfície de les capes nanoestructurades per tal de controlar la deriva en la senyal al llarg del temps, quan el sensor està operant, a través d'un control de temperatura.En esta tesis utilizando principalmente Aerosol Assited Chemical Vapor Deposition, AACVD, como metodología de síntesis de óxido de tungsteno nanoestructurado se han fabricado diferentes sensores de gases. Para estudiar la mejora en la selectividad y la sensibilidad de los sensores de gases basados en óxido de tungsteno estos se han decorado, vía AACVD, con nanopartículas de otros óxidos metálicos para crear heterouniones para obtener un incremento en la sensibilidad electrónica, las propiedades químicas del material o bien ambas. En particular, se han trabajado en diferentes sensores de nanohilos de óxido de tungsteno decorados con nanopartículas de óxido de níquel, óxido de cobalto y óxido de iridio resultante en sensores con un gran incremento de respuesta y selectividad hacia el sulfuro de hidrógeno, para el amoníaco y para el óxido de nitrógeno respectivamente a concentraciones traza. Además, se han estudiado los mecanismos de reacción que tienen lugar entre las especies de oxígeno adsorbidas en la superficie del sensor cuando interactúa con un gas. Y también se ha trabajado en intentar controlar el potencial de superficie de las capas nanoestructuradas para controlar la deriva en la señal a lo largo del tiempo, cuando el sensor está trabajando, a través de un control de temperatura.In this thesis, using mainly Aerosol Assited Chemical Vapor Deposition, AACVD, as a synthesis methodology for nanostructured tungsten oxide, different gas sensors have been manufactured. To study the improvement in the selectivity and sensitivity of gas sensors based on tungsten oxide, they have been decorated, via AACVD, with nanoparticles of other metal oxides to create heterojunctions to obtain an increase in electronic sensitivity, in the chemical properties of the material or at the same time in both. Particularly, we have worked on different tungsten oxide nanowire sensors decorated with nanoparticles of nickel oxide, cobalt oxide and iridium oxide resulting in sensors with a large increase in response and selectivity towards hydrogen sulfide, for ammonia. and for nitrogen oxide respectively at trace concentrations. In addition, the reaction mechanisms that take place between oxygen species adsorbed on the sensor surface when it interacts with a gas have been also studied. Furthermore, efforts have been put on trying to control the surface potential of the nanostructured layers to control the drift in the signal over time, when operating the sensors, through temperature control

Advances on CMOS image sensors

This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. The current trend is to push the innovation efforts even further as the market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. With this paper, we offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact the images sensor applications and markets

Dielectric characterization for hot film anemometry in METNET Mars Mission

In a few words, the main purpose of this work has been the research, fabrication, characterization and testing of a material with the suitable properties to work as an interface layer between a hot film anemometer and its surrounding air. After explaining the working principle of the anemometer the suitable features of the idealistic material will be justifie

On evolution of CMOS image sensors

CMOS Image Sensors have become the principal technology in majority of digital cameras. They started replacing the film and Charge Coupled Devices in the last decade with the promise of lower cost, lower power requirement, higher integration and the potential of focal plane processing. However, the principal factor behind their success has been the ability to utilise the shrinkage in CMOS technology to make smaller pixels, and thereby have more resolution without increasing the cost. With the market of image sensors exploding courtesy their inte- gration with communication and computation devices, technology developers improved the CMOS processes to have better optical performance. Nevertheless, the promises of focal plane processing as well as on-chip integration have not been fulfilled. The market is still being pushed by the desire of having higher number of pixels and better image quality, however, differentiation is being difficult for any image sensor manufacturer. In the paper, we will explore potential disruptive growth directions for CMOS Image sensors and ways to achieve the same

Acceleration of the measurement time of thermopiles using sigma-delta control

This work presents a double sliding mode control designed for accelerating the measurement of heat fluxes using thermopiles. The slow transient response generated in the thermopile, when it is placed in contact with the surface to be measured, is due to the changes in the temperature distributions that this operation triggers. It is shown that under some conditions the proposed controls keep the temperature distribution of the whole system constant and that changes in the heat flux at the thermopile are almost instantaneously compensated by the controls. One-dimensional simulations and experimental results using a commercial thermopile, showing the goodness of the proposed approach, are presented. A first rigorous analysis of the control using the Sliding Mode Control and Diffusive Representation theories is also made.Peer ReviewedPostprint (published version