674 research outputs found

    Automatic March tests generation for multi-port SRAMs

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    Testing of Multi-Port (MP) SRAMs requires special tests since the multiple and simultaneous access can sensitize faults that are different from the conventional single-port memory faults. In spite of their growing use, few works have been published on testing MP memories. In addition, most of the published work concentrated only on two ports memories (i.e., 2P memories). This paper presents a methodology to automatically generate march tests for MP memories. It is based on generations of single port memory march test firstly, then extending it to test a generic MP SRAMs. A set of experimental results shows the effectiveness of the proposed solutio

    A Low-Cost FPGA-Based Test and Diagnosis Architecture for SRAMs

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    The continues improvement of manufacturing technologies allows the realization of integrated circuits containing an ever increasing number of transistors. A major part of these devices is devoted to realize SRAM blocks. Test and diagnosis of SRAM circuits are therefore an important challenge for improving quality of next generation integrated circuits. This paper proposes a flexible platform for testing and diagnosis of SRAM circuits. The architecture is based on the use of a low cost FPGA based board allowing high diagnosability while keeping costs at a very low leve

    A programmable BIST architecture for clusters of Multiple-Port SRAMs

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    This paper presents a BIST architecture, based on a single microprogrammable BIST processor and a set of memory wrappers, designed to simplify the test of a system containing many distributed multi-port SRAMs of different sizes (number of bits, number of words), access protocol (asynchronous, synchronous), and timin

    March AB, March AB1: new March tests for unlinked dynamic memory faults

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    Among the different types of algorithms proposed to test static random access memories (SRAMs), March tests have proven to be faster, simpler and regularly structured. New memory production technologies introduce new classes of faults usually referred to as dynamic memory faults. A few March tests for dynamic fault, with different fault coverage, have been published. In this paper, we propose new March tests targeting unlinked dynamic faults with lower complexity than published ones. Comparison results show that the proposed March tests provide the same fault coverage of the known ones, but they reduce the test complexity, and therefore the test tim

    March CRF: an Efficient Test for Complex Read Faults in SRAM Memories

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    In this paper we study Complex Read Faults in SRAMs, a combination of various malfunctions that affect the read operation in nanoscale memories. All the memory elements involved in the read operation are studied, underlining the causes of the realistic faults concerning this operation. The requirements to cover these fault models are given. We show that the different causes of read failure are independent and may coexist in nanoscale SRAMs, summing their effects and provoking Complex Read Faults, CRFs. We show that the test methodology to cover this new read faults consists in test patterns that match the requirements to cover all the different simple read fault models. We propose a low complexity (?2N) test, March CRF, that covers effectively all the realistic Complex Read Fault

    A 3-D Track-Finding Processor for the CMS Level-1 Muon Trigger

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    We report on the design and test results of a prototype processor for the CMS Level-1 trigger that performs 3-D track reconstruction and measurement from data recorded by the cathode strip chambers of the endcap muon system. The tracking algorithms are written in C++ using a class library we developed that facilitates automatic conversion to Verilog. The code is synthesized into firmware for field-programmable gate-arrays from the Xilinx Virtex-II series. A second-generation prototype has been developed and is currently under test. It performs regional track-finding in a 60 degree azimuthal sector and accepts 3 GB/s of input data synchronously with the 40 MHz beam crossing frequency. The latency of the track-finding algorithms is expected to be 250 ns, including geometrical alignment correction of incoming track segments and a final momentum assignment based on the muon trajectory in the non-uniform magnetic field in the CMS endcaps.Comment: 7 pages, 5 figures, proceedings for the conference on Computing in High Energy and Nuclear Physics, March 24-28 2003, La Jolla, Californi

    Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells

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    The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors. The use of new production processes introduces a set of parasitic effects that gain more and more importance with the scaling down of the technology. In particular, even small variations of parasitic capacitances in CMOS devices are expected to become an additional source of faulty behaviors in future technologies. This paper analyzes and compares the effect of parasitic capacitance variations in a SRAM memory circuit realized with 65 nm and 32 nm predictive technology model

    Automatic March tests generation for static and dynamic faults in SRAMs

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    New memory production modern technologies introduce new classes of faults usually referred to as dynamic memory faults. Although some hand-made March tests to deal with these new faults have been published, the problem of automatically generate March tests for dynamic faults has still to be addressed, in this paper we propose a new approach to automatically generate March tests with minimal length for both static and dynamic faults. The proposed approach resorts to a formal model to represent faulty behaviors in a memory and to simplify the generation of the corresponding tests

    Automating defects simulation and fault modeling for SRAMs

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    The continues improvement in manufacturing process density for very deep sub micron technologies constantly leads to new classes of defects in memory devices. Exploring the effect of fabrication defects in future technologies, and identifying new classes of realistic functional fault models with their corresponding test sequences, is a time consuming task up to now mainly performed by hand. This paper proposes a new approach to automate this procedure. The proposed method exploits the capabilities of evolutionary algorithms to automatically identify faulty behaviors into defective memories and to define the corresponding fault models and relevant test sequences. Target defects are modeled at the electrical level in order to optimize the results to the specific technology and memory architecture
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