1,978 research outputs found
Constructions of Rank Modulation Codes
Rank modulation is a way of encoding information to correct errors in flash
memory devices as well as impulse noise in transmission lines. Modeling rank
modulation involves construction of packings of the space of permutations
equipped with the Kendall tau distance.
We present several general constructions of codes in permutations that cover
a broad range of code parameters. In particular, we show a number of ways in
which conventional error-correcting codes can be modified to correct errors in
the Kendall space. Codes that we construct afford simple encoding and decoding
algorithms of essentially the same complexity as required to correct errors in
the Hamming metric. For instance, from binary BCH codes we obtain codes
correcting Kendall errors in memory cells that support the order of
messages, for any constant We also construct
families of codes that correct a number of errors that grows with at
varying rates, from to . One of our constructions
gives rise to a family of rank modulation codes for which the trade-off between
the number of messages and the number of correctable Kendall errors approaches
the optimal scaling rate. Finally, we list a number of possibilities for
constructing codes of finite length, and give examples of rank modulation codes
with specific parameters.Comment: Submitted to IEEE Transactions on Information Theor
Asymmetric Error Correction and Flash-Memory Rewriting using Polar Codes
We propose efficient coding schemes for two communication settings: 1.
asymmetric channels, and 2. channels with an informed encoder. These settings
are important in non-volatile memories, as well as optical and broadcast
communication. The schemes are based on non-linear polar codes, and they build
on and improve recent work on these settings. In asymmetric channels, we tackle
the exponential storage requirement of previously known schemes, that resulted
from the use of large Boolean functions. We propose an improved scheme, that
achieves the capacity of asymmetric channels with polynomial computational
complexity and storage requirement.
The proposed non-linear scheme is then generalized to the setting of channel
coding with an informed encoder, using a multicoding technique. We consider
specific instances of the scheme for flash memories, that incorporate
error-correction capabilities together with rewriting. Since the considered
codes are non-linear, they eliminate the requirement of previously known
schemes (called polar write-once-memory codes) for shared randomness between
the encoder and the decoder. Finally, we mention that the multicoding scheme is
also useful for broadcast communication in Marton's region, improving upon
previous schemes for this setting.Comment: Submitted to IEEE Transactions on Information Theory. Partially
presented at ISIT 201
Time-Space Constrained Codes for Phase-Change Memories
Phase-change memory (PCM) is a promising non-volatile solid-state memory
technology. A PCM cell stores data by using its amorphous and crystalline
states. The cell changes between these two states using high temperature.
However, since the cells are sensitive to high temperature, it is important,
when programming cells, to balance the heat both in time and space.
In this paper, we study the time-space constraint for PCM, which was
originally proposed by Jiang et al. A code is called an
\emph{-constrained code} if for any consecutive
rewrites and for any segment of contiguous cells, the total rewrite
cost of the cells over those rewrites is at most . Here,
the cells are binary and the rewrite cost is defined to be the Hamming distance
between the current and next memory states. First, we show a general upper
bound on the achievable rate of these codes which extends the results of Jiang
et al. Then, we generalize their construction for -constrained codes and show another construction for -constrained codes. Finally, we show that these two
constructions can be used to construct codes for all values of ,
, and
Achieving Secrecy Capacity of the Gaussian Wiretap Channel with Polar Lattices
In this work, an explicit wiretap coding scheme based on polar lattices is
proposed to achieve the secrecy capacity of the additive white Gaussian noise
(AWGN) wiretap channel. Firstly, polar lattices are used to construct
secrecy-good lattices for the mod- Gaussian wiretap channel. Then we
propose an explicit shaping scheme to remove this mod- front end and
extend polar lattices to the genuine Gaussian wiretap channel. The shaping
technique is based on the lattice Gaussian distribution, which leads to a
binary asymmetric channel at each level for the multilevel lattice codes. By
employing the asymmetric polar coding technique, we construct an AWGN-good
lattice and a secrecy-good lattice with optimal shaping simultaneously. As a
result, the encoding complexity for the sender and the decoding complexity for
the legitimate receiver are both O(N logN log(logN)). The proposed scheme is
proven to be semantically secure.Comment: Submitted to IEEE Trans. Information Theory, revised. This is the
authors' own version of the pape
Algorithms and Data Representations for Emerging Non-Volatile Memories
The evolution of data storage technologies has been extraordinary. Hard disk drives
that fit in current personal computers have the capacity that requires tons of transistors
to achieve in 1970s. Today, we are at the beginning of the era of non-volatile memory
(NVM). NVMs provide excellent performance such as random access, high I/O speed, low
power consumption, and so on. The storage density of NVMs keeps increasing following
Moore’s law. However, higher storage density also brings significant data reliability issues.
When chip geometries scale down, memory cells (e.g. transistors) are aligned much closer
to each other, and noise in the devices will become no longer negligible. Consequently,
data will be more prone to errors and devices will have much shorter longevity.
This dissertation focuses on mitigating the reliability and the endurance issues for two
major NVMs, namely, NAND flash memory and phase-change memory (PCM). Our main
research tools include a set of coding techniques for the communication channels implied
by flash memory and PCM. To approach the problems, at bit level we design error
correcting codes tailored for the asymmetric errors in flash and PCM, we propose joint
coding scheme for endurance and reliability, error scrubbing methods for controlling storage
channel quality, and study codes that are inherently resisting to typical errors in flash
and PCM; at higher levels, we are interested in analyzing the structures and the meanings
of the stored data, and propose methods that pass such metadata to help further improve
the coding performance at bit level. The highlights of this dissertation include the first
set of write-once memory code constructions which correct a significant number of errors,
a practical framework which corrects errors utilizing the redundancies in texts, the first
report of the performance of polar codes for flash memories, and the emulation of rank
modulation codes in NAND flash chips
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