7 research outputs found

    Dependable Embedded Systems

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    This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

    MFPA: Mixed-Signal Field Programmable Array for Energy-Aware Compressive Signal Processing

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    Compressive Sensing (CS) is a signal processing technique which reduces the number of samples taken per frame to decrease energy, storage, and data transmission overheads, as well as reducing time taken for data acquisition in time-critical applications. The tradeoff in such an approach is increased complexity of signal reconstruction. While several algorithms have been developed for CS signal reconstruction, hardware implementation of these algorithms is still an area of active research. Prior work has sought to utilize parallelism available in reconstruction algorithms to minimize hardware overheads; however, such approaches are limited by the underlying limitations in CMOS technology. Herein, the MFPA (Mixed-signal Field Programmable Array) approach is presented as a hybrid spin-CMOS reconfigurable fabric specifically designed for implementation of CS data sampling and signal reconstruction. The resulting fabric consists of 1) slice-organized analog blocks providing amplifiers, transistors, capacitors, and Magnetic Tunnel Junctions (MTJs) which are configurable to achieving square/square root operations required for calculating vector norms, 2) digital functional blocks which feature 6-input clockless lookup tables for computation of matrix inverse, and 3) an MRAM-based nonvolatile crossbar array for carrying out low-energy matrix-vector multiplication operations. The various functional blocks are connected via a global interconnect and spin-based analog-to-digital converters. Simulation results demonstrate significant energy and area benefits compared to equivalent CMOS digital implementations for each of the functional blocks used: this includes an 80% reduction in energy and 97% reduction in transistor count for the nonvolatile crossbar array, 80% standby power reduction and 25% reduced area footprint for the clockless lookup tables, and roughly 97% reduction in transistor count for a multiplier built using components from the analog blocks. Moreover, the proposed fabric yields 77% energy reduction compared to CMOS when used to implement CS reconstruction, in addition to latency improvements

    Nano-intrinsic security primitives for internet of everything

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    With the advent of Internet-enabled electronic devices and mobile computer systems, maintaining data security is one of the most important challenges in modern civilization. The innovation of physically unclonable functions (PUFs) shows great potential for enabling low-cost low-power authentication, anti-counterfeiting and beyond on the semiconductor chips. This is because secrets in a PUF are hidden in the randomness of the physical properties of desirably identical devices, making it extremely difficult, if not impossible, to extract them. Hence, the basic idea of PUF is to take advantage of inevitable non-idealities in the physical domain to create a system that can provide an innovative way to secure device identities, sensitive information, and their communications. While the physical variation exists everywhere, various materials, systems, and technologies have been considered as the source of unpredictable physical device variation in large scales for generating security primitives. The purpose of this project is to develop emerging solid-state memory-based security primitives and examine their robustness as well as feasibility. Firstly, the author gives an extensive overview of PUFs. The rationality, classification, and application of PUF are discussed. To objectively compare the quality of PUFs, the author formulates important PUF properties and evaluation metrics. By reviewing previously proposed constructions ranging from conventional standard complementary metal-oxide-semiconductor (CMOS) components to emerging non-volatile memories, the quality of different PUFs classes are discussed and summarized. Through a comparative analysis, emerging non-volatile redox-based resistor memories (ReRAMs) have shown the potential as promising candidates for the next generation of low-cost, low-power, compact in size, and secure PUF. Next, the author presents novel approaches to build a PUF by utilizing concatenated two layers of ReRAM crossbar arrays. Upon concatenate two layers, the nonlinear structure is introduced, and this results in the improved uniformity and the avalanche characteristic of the proposed PUF. A group of cell readout method is employed, and it supports a massive pool of challenge-response pairs of the nonlinear ReRAM-based PUF. The non-linear PUF construction is experimentally assessed using the evaluation metrics, and the quality of randomness is verified using predictive analysis. Last but not least, random telegraph noise (RTN) is studied as a source of entropy for a true random number generation (TRNG). RTN is usually considered a disadvantageous feature in the conventional CMOS designs. However, in combination with appropriate readout scheme, RTN in ReRAM can be used as a novel technique to generate quality random numbers. The proposed differential readout-based design can maintain the quality of output by reducing the effect of the undesired noise from the whole system, while the controlling difficulty of the conventional readout method can be significantly reduced. This is advantageous as the differential readout circuit can embrace the resistance variation features of ReRAMs without extensive pre-calibration. The study in this thesis has the potential to enable the development of cost-efficient and lightweight security primitives that can be integrated into modern computer mobile systems and devices for providing a high level of security

    Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems

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    With the continuous and aggressive technology scaling, the design of memory systems becomes very challenging. The desire to have high-capacity, reliable, and energy efficient memory arrays is rising rapidly. However, from the technology side, the increasing leakage power and the restrictions resulting from the manufacturing limitations complicate the design of memory systems. In addition to this, with the new machine learning applications, which require tremendous amount of mathematical operations to be completed in a timely manner, the interest in neuromorphic systems has increased in recent years. Emerging Non- Volatile Memory (NVM) devices have been suggested to be incorporated in the design of memory arrays due to their small size and their ability to reduce leakage power since they can retain their data even in the absence of power supply. Compared to other novel NVM devices, the Resistive Random Access Memory (RRAM) device has many advantages including its low-programming requirements, the large ratio between its high and low resistive states, and its compatibility with the Complementary Metal Oxide Semiconductor (CMOS) fabrication process. RRAM device suffers from other disadvantages including the instability in its switching dynamics and its sensitivity to process variations. Yet, one of the popular issues hindering the deployment of RRAM arrays in products are the RRAM reliability and radiation soft-errors. The RRAM reliability soft-errors result from the diffusion of oxygen vacations out of the conductive channels within the oxide material of the device. On the other hand, the radiation soft-errors are caused by the highly energetic cosmic rays incident on the junction of the MOS device used as a selector for the RRAM cell. Both of those soft-errors cause the unintentional change of the resistive state of the RRAM device. While there is research work in literature to address some of the RRAM disadvantages such as the switching dynamic instability, there is no dedicated work discussing the impact of RRAM soft-errors on the various designs to which the RRAM device is integrated and how the soft-errors can be automatically detected and fixed. In this thesis, we bring the attention to the need of considering the RRAM soft-errors to avoid the degradation in design performance. In addition to this, using previously reported SPICE models, which were experimentally verified, and widely adapted system level simulators and test benches, various solutions are provided to automatically detect and fix the degradation in design performance due to the RRAM soft-errors. The main focus in this work is to propose methodologies which solve or improve the robustness of memory systems to the RRAM soft-errors. These memories are expected to be incorporated in the current and futuristic platforms running the advanced machine learning applications. In more details, the main contributions of this thesis can be summarized as: - Provide in depth analysis of the impact of RRAM soft-errors on the performance of RRAM-based designs. - Provide a new SRAM cell which uses the RRAM device to reduce the SRAM leakage power with minimal impact on its read and write operations. This new SRAM cell can be incorporated in the Graphical Processing Unit (GPU) design used currently in the implementation of the machine learning platforms. - Provide a circuit and system solutions to resolve the reliability and radiation soft-errors in the RRAM arrays. These solution can automatically detect and fix the soft-errors with minimum impact on the delay and energy consumption of the memory array. - A framework is developed to estimate the effect of RRAM soft-errors on the performance of RRAM-based neuromorphic systems. This actually provides, for the first time, a very generic methodology through which the device level RRAM soft-errors are mapped to the overall performance of the neuromorphic systems. Our analysis show that the accuracy of the RRAM-based neuromorphic system can degrade by more than 48% due to RRAM soft-errors. - Two algorithms are provided to automatically detect and restore the degradation in RRAM-based neuromorphic systems due to RRAM soft-errors. The system and circuit level techniques to implement these algorithms are also explained in this work. In conclusion, this work offers initial steps for enabling the usage of RRAM devices in products by tackling one of its most known challenges: RRAM reliability and radiation soft-errors. Despite using experimentally verified SPICE models and widely popular system simulators and test benches, the provided solutions in this thesis need to be verified in the future work through fabrication to study the impact of other RRAM technology shortcomings including: a) the instability in its switching dynamics due to the stochastic nature of oxygen vacancies movement, and b) its sensitivity to process variations

    Low Power Memory/Memristor Devices and Systems

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    This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

    Architectural Solutions for NanoMagnet Logic

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    The successful era of CMOS technology is coming to an end. The limit on minimum fabrication dimensions of transistors and the increasing leakage power hinder the technological scaling that has characterized the last decades. In several different ways, this problem has been addressed changing the architectures implemented in CMOS, adopting parallel processors and thus increasing the throughput at the same operating frequency. However, architectural alternatives cannot be the definitive answer to a continuous increase in performance dictated by Moore’s law. This problem must be addressed from a technological point of view. Several alternative technologies that could substitute CMOS in next years are currently under study. Among them, magnetic technologies such as NanoMagnet Logic (NML) are interesting because they do not dissipate any leakage power. More- over, magnets have memory capability, so it is possible to merge logic and memory in the same device. However, magnetic circuits, and NML in this specific research, have also some important drawbacks that need to be addressed: first, the circuit clock frequency is limited to 100 MHz, to avoid errors in data propagation; second, there is a connection between circuit layout and timing, and in particular, longer wires will have longer latency. These drawbacks are intrinsic to the technology and for this reason they cannot be avoided. The only chance is to limit their impact from an architectural point of view. The first step followed in the research path of this thesis is indeed the choice and optimization of architectures able to deal with the problems of NML. Systolic Ar- rays are identified as an ideal solution for this technology, because they are regular structures with local interconnections that limit the long latency of wires; more- over they are composed of several Processing Elements that work in parallel, thus exploit parallelization to increase throughput (limiting the impact of the low clock frequency). Through the analysis of Systolic Arrays for NML, several possible im- provements have been identified and addressed: 1) it has been defined a rigorous way to increase throughput with interleaving, providing equations that allow to esti- mate the number of operations to be interleaved and the rules to provide inputs; 2) a latency insensitive circuit has been designed, that exploits a data communication protocol between processing elements to avoid data synchronization problems. This feature has been exploited to design a latency insensitive Systolic Array that is able to execute the Floyd-Steinberg dithering algorithm. All the improvements presented in this framework apply to Systolic Arrays implemented in any technology. So, they can also be exploited to increase performance of today’s CMOS parallel circuits. This research path is presented in Chapter 3. While Systolic Arrays are an interesting solution for NML, their usage could be quite limited because they are normally application-specific. The second re- search path addresses this problem. A Reconfigurable Systolic Array is presented, that can be programmed to execute several algorithms. This architecture has been tested implementing many algorithms, including FIR and IIR filters, Discrete Cosine Transform and Matrix Multiplication. This research path is presented in Chapter 4. In common Von Neumann architectures, the logic part of the circuit and the memory one are separated. Today bus communication between logic and memory represents the bottleneck of the system. This problem is addressed presenting Logic- In-Memory (LIM), an architecture where memory elements are merged in logic ones. This research path aims at defining a real LIM architectures. This has been done in two steps. The first step is represented by an architecture composed of three layers: memory, routing and logic. In the second step instead the routing plane is no more present, and its features are inherited by the memory plane. In this solution, a pyramidal memory model is used, where memories near logic elements contain the most probably used data, and other memory layers contain the remaining data and instruction set. This circuit has been tested with odd-even sort algorithms and it has been benchmarked against GPUs and ASIC. This research path is presented in Chapter 5. MagnetoElastic NML (ME-NML) is a technological improvement of the NML principle, proposed by researchers of Politecnico di Torino, where the clock system is based on the induced stretch of a piezoelectric substrate when a voltage is ap- plied to its boundaries. The main advantage of this solution is that it consumes much less power than the classic clock implementation. This technology has not yet been investigated from an architectural point of view and considering complex circuits. In this research field, a standard methodology for the design of ME-NML circuits has been proposed. It is based on a Standard Cell Library and an enhanced VHDL model. The effectiveness of this methodology has been proved designing a Galois Field Multiplier. Moreover the serial-parallel trade-off in ME-NML has been investigated, designing three different solutions for the Multiply and Accumulate structure. This research path is presented in Chapter 6. While ME-NML is an extremely interesting technology, it needs to be combined with other faster technologies to have a real competitive system. Signal interfaces between NML and other technologies (mainly CMOS) have been rarely presented in literature. A mixed-technology multiplexer is designed and presented as the basis for a CMOS to NML interface. The reverse interface (from ME-NML to CMOS) is instead based on a sensing circuit for the Faraday effect: a change in the polarization of a magnet induces an electric field that can be used to generate an input signal for a CMOS circuit. This research path is presented in Chapter 7. The research work presented in this thesis represents a fundamental milestone in the path towards nanotechnologies. The most important achievement is the de- sign and simulation of complex circuits with NML, benchmarking this technology with real application examples. The characterization of a technology considering complex functions is a major step to be performed and that has not yet been ad- dressed in literature for NML. Indeed, only in this way it is possible to intercept in advance any weakness of NanoMagnet Logic that cannot be discovered consid- ering only small circuits. Moreover, the architectural improvements introduced in this thesis, although technology-driven, can be actually applied to any technology. We have demonstrated the advantages that can derive applying them to CMOS cir- cuits. This thesis represents therefore a major step in two directions: the first is the enhancement of NML technology; the second is a general improvement of parallel architectures and the development of the new Logic-In-Memory paradigm
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