Design of Inverter Based CMOS Amplifiers in Deep Nanoscale Technologies

In this work, it is proposed a fully differential ring amplifier topology with a deadzone voltage created by a CMOS resistor with a biasing circuit to increase the robustness over PVT variations. The study focuses on analyzing the performance of the ring amplifier over process, temperature, and supply voltage variations, in order to guarantee a viable industrial employment in a 7 nm FinFET CMOS technology node for being used as residue amplifier in ADCs. A ring amplifier is a small modular amplifier, derived from a ring oscillator. It is simple enough that it can quickly be designed using only a few inverters, capacitors, and switches. It can amplify with rail-to-rail output swing, competently charge large capacitive loads using slew-based charging, and scale well in performance according to process trends. In typical process corner, a gain of 72 dB is achieved with a settling time of 150 ps. Throughout the study, the proposed topology is compared with others presented in literature showing better results over corners and presenting a faster response. The proposed topology isn’t yet suitable for industry use, because it presents one corner significantly slower than the rest, namely process corner FF 125 °C, and process corner FS -40 °C with a small oscillation throughout the entire amplification period. Nevertheless, it proved itself to be a promising technique, showing a high gain and a fast settling without oscillation phase, with room for improvement.Neste trabalho, é proposta uma topologia de ring amplifier com a deadzone a ser criada através de uma resistência CMOS com um circuito de polarização para aumentar a robustez para as variações PVT. O estudo foca-se em analisar a performance do ring amplifier nas variações de processo, temperatura e tensão de alimentação, de forma a garantir um uso viável em indústria na tecnologia de 7 nm FinFET CMOS, para ser usado como amplificador de resíduo em ADCs. Um ring amplifier é um pequeno amplificador modular, derivado do ring oscillator. É simples o suficiente para ser facilmente projetado usando apenas poucos inversores, condensadores e interruptores. Consegue amplificar com rail-to-rail output swing, carregar grandes cargas capacitivas com carregamento slew-based e escalar bem em termos de performance de acordo com o processo. No typical process corner, foi obtido um ganho de 72 dB com um tempo de estabilização de 150 ps. Durante o estudo, a topologia proposta é comparada com outras presentes na literatura mostrando melhores resultados over corners e apresentando uma resposta mais rápida. A topologia proposta ainda não está preparada para uso industrial uma vez que apresenta um corner significativamente mais lento que os restantes, nomeadamente, process corner FF 125 °C, e outro process corner, FS -40 °C, com uma pequena oscilação durante todo o período de amplificação. Todavia, provou ser uma técnica promissora, apresentando um ganho elevado e uma rápida estabilização sem fase de oscilação, com espaço para melhoria

Energy Efficient Pipeline ADCs Using Ring Amplifiers

Pipeline ADCs require accurate amplification. Traditionally, an operational transconductance amplifier (OTA) configured as a switched-capacitor (SC) amplifier performs such amplification. However, traditional OTAs limit the power efficiency of ADCs since they require high quiescent current for slewing and bandwidth. In addition, it is difficult to design low-voltage OTAs in modern, scaled CMOS. The ring amplifier is an energy efficient and high output swing alternative to an OTA for SC circuits which is basically a three-stage inverter amplifier stabilized in a feedback configuration. However, the conventional ring amplifier requires external biases, which makes the ring amplifier less practical when we consider process, supply voltage, and temperature (PVT) variation. In this dissertation, three types of innovative ring amplifiers are presented and verified with state-of-the-art energy efficient pipeline ADCs. These new ring amplifiers overcome the limitations of the conventional ring amplifier and further improve energy efficiency. The first topic of this dissertation is a self-biased ring amplifier that makes the ring amplifier more practical and power efficient, while maintaining the benefits of efficient slew-based charging and an almost rail-to-rail output swing. In addition, the ring amplifiers are also used as comparators in the 1.5b sub-ADCs by utilizing the unique characteristics of the ring amplifier. This removes the need for dedicated comparators in sub-ADCs, thus further reducing the power consumption of the ADC. The prototype 10.5b 100 MS/s comparator-less pipeline ADC with the self-biased ring amplifiers has measured SNDR, SNR and SFDR of 56.6 dB (9.11b), 57.5 dB and 64.7 dB, respectively, and consumes 2.46 mW, which results in Walden Figure-of-Merit (FoM) of 46.1 fJ/ conversion∙step. The second topic is a fully-differential ring amplifier, which solves the problems of single-ended ring amplifiers while maintaining the benefits of the single-ended ring amplifiers. This differential ring-amplifier is applied in a 13b 50 MS/s SAR-assisted pipeline ADC. Furthermore, an improved capacitive DAC switching method for the first stage SAR reduces the DAC linearity errors and switching energy. The prototype ADC achieves measured SNDR, SNR and SFDR of 70.9 dB (11.5b), 71.3 dB and 84.6 dB, respectively, and consumes 1 mW. This measured performance is equivalent to Walden and Schreier FoMs of 6.9 fJ/conversion∙step and 174.9 dB, respectively. Finally, a four-stage fully-differential ring amplifier improves the small-signal gain to over 90 dB without compromising speed. In addition, a new auto-zero noise filtering method reduces noise without consuming additional power. This is more area efficient than the conventional auto-zero noise folding reduction technique. A systematic mismatch free SAR CDAC layout method is also presented. The prototype 15b 100 MS/s calibration-free SAR-assisted pipeline ADC using the four-stage ring amplifier achieves 73.2 dB SNDR (11.9b) and 90.4 dB SFDR with a 1.1 V supply. It consumes 2.3 mW resulting in Schreier FoM of 176.6 dB.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138759/1/yonglim_1.pd

A 10-bit Charge-Redistribution ADC Consuming 1.9 μW at 1 MS/s

This paper presents a 10 bit successive approximation ADC in 65 nm CMOS that benefits from technology scaling. It meets extremely low power requirements by using a charge-redistribution DAC that uses step-wise charging, a dynamic two-stage comparator and a delay-line-based controller. The ADC requires no external reference current and uses only one external supply voltage of 1.0 V to 1.3 V. Its supply current is proportional to the sample rate (only dynamic power consumption). The ADC uses a chip area of approximately 115--225 μm2. At a sample rate of 1 MS/s and a supply voltage of 1.0 V, the 10 bit ADC consumes 1.9 μW and achieves an energy efficiency of 4.4 fJ/conversion-step

Time-domain optimization of amplifiers based on distributed genetic algorithms

Thesis presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Electrical and Computer EngineeringThe work presented in this thesis addresses the task of circuit optimization, helping the designer facing the high performance and high efficiency circuits demands of the market and technology evolution. A novel framework is introduced, based on time-domain analysis, genetic algorithm optimization, and distributed processing. The time-domain optimization methodology is based on the step response of the amplifier. The main advantage of this new time-domain methodology is that, when a given settling-error is reached within the desired settling-time, it is automatically guaranteed that the amplifier has enough open-loop gain, AOL, output-swing (OS), slew-rate (SR), closed loop bandwidth and closed loop stability. Thus, this simplification of the circuit‟s evaluation helps the optimization process to converge faster. The method used to calculate the step response expression of the circuit is based on the inverse Laplace transform applied to the transfer function, symbolically, multiplied by 1/s (which represents the unity input step). Furthermore, may be applied to transfer functions of circuits with unlimited number of zeros/poles, without approximation in order to keep accuracy. Thus, complex circuit, with several design/optimization degrees of freedom can also be considered. The expression of the step response, from the proposed methodology, is based on the DC bias operating point of the devices of the circuit. For this, complex and accurate device models (e.g. BSIM3v3) are integrated. During the optimization process, the time-domain evaluation of the amplifier is used by the genetic algorithm, in the classification of the genetic individuals. The time-domain evaluator is integrated into the developed optimization platform, as independent library, coded using C programming language. The genetic algorithms have demonstrated to be a good approach for optimization since they are flexible and independent from the optimization-objective. Different levels of abstraction can be optimized either system level or circuit level. Optimization of any new block is basically carried-out by simply providing additional configuration files, e.g. chromosome format, in text format; and the circuit library where the fitness value of each individual of the genetic algorithm is computed. Distributed processing is also employed to address the increasing processing time demanded by the complex circuit analysis, and the accurate models of the circuit devices. The communication by remote processing nodes is based on Message Passing interface (MPI). It is demonstrated that the distributed processing reduced the optimization run-time by more than one order of magnitude. Platform assessment is carried by several examples of two-stage amplifiers, which have been optimized and successfully used, embedded, in larger systems, such as data converters. A dedicated example of an inverter-based self-biased two-stage amplifier has been designed, laid-out and fabricated as a stand-alone circuit and experimentally evaluated. The measured results are a direct demonstration of the effectiveness of the proposed time-domain optimization methodology.Portuguese Foundation for the Science and Technology (FCT

Digital-Based Analog Processing in Nanoscale CMOS ICs for IoT Applications

L'abstract è presente nell'allegato / the abstract is in the attachmen

A 0.3 V, rail-to-rail, ultralow-power, non-tailed, body-driven, sub-threshold amplifier

A novel, inverter-based, fully differential, body-driven, rail-to-rail, input stage topology is proposed in this paper. The input stage exploits a replica bias control loop to set the common mode current and a common mode feed-forward strategy to set its output common mode voltage. This novel cell is used to build an ultralow voltage (ULV), ultralow-power (ULP), two-stage, unbuffered operational amplifier. A dual path compensation strategy is exploited to improve the frequency response of the circuit. The amplifier has been designed in a commercial 130 nm CMOS technology from STMicroelectronics and is able to operate with a nominal supply voltage of 0.3 V and a power consumption as low as 11.4 nW, while showing about 65 dB gain, a gain bandwidth product around 3.6 kHz with a 50 pF load capacitance and a common mode rejection ratio (CMRR) in excess of 60 dB. Transistor-level simulations show that the proposed circuit outperforms most of the state of the art amplifiers in terms of the main figures of merit. The results of extensive parametric and Monte Carlo simulations have demonstrated the robustness of the proposed circuit to PVT and mismatch variations

Digital-based analog processing in nanoscale CMOS ICs for IoT applications

The Internet-of-Things (IoT) concept has been opening up a variety of applications, such as urban and environmental monitoring, smart health, surveillance, and home automation. Most of these IoT applications require more and more power/area efficient Complemen tary Metal–Oxide–Semiconductor (CMOS) systems and faster prototypes (lower time-to market), demanding special modifications in the current IoT design system bottleneck: the analog/RF interfaces. Specially after the 2000s, it is evident that there have been significant improvements in CMOS digital circuits when compared to analog building blocks. Digital circuits have been taking advantage of CMOS technology scaling in terms of speed, power consump tion, and cost, while the techniques running behind the analog signal processing are still lagging. To decrease this historical gap, there has been an increasing trend in finding alternative IC design strategies to implement typical analog functions exploiting Digital in-Concept Design Methodologies (DCDM). This idea of re-thinking analog functions in digital terms has shown that Analog ICs blocks can also avail of the feature-size shrinking and energy efficiency of new technologies. This thesis deals with the development of DCDM, demonstrating its compatibility for Ultra-Low-Voltage (ULV) and Power (ULP) IoT applications. This work proves this state ment through the proposing of new digital-based analog blocks, such as an Operational Transconductance Amplifiers (OTAs) and an ac-coupled Bio-signal Amplifier (BioAmp). As an initial contribution, for the first time, a silicon demonstration of an embryonic Digital-Based OTA (DB-OTA) published in 2013 is exhibited. The fabricated DB-OTA test chip occupies a compact area of 1,426 µm2 , operating at supply voltages (VDD) down to 300 mV, consuming only 590 pW while driving a capacitive load of 80pF. With a Total Harmonic Distortion (THD) lower than 5% for a 100mV input signal swing, its measured small-signal figure of merit (FOMS) and large-signal figure of merit (FOML) are 2,101 V −1 and 1,070, respectively. To the best of this thesis author’s knowledge, this measured power is the lowest reported to date in OTA literature, and its figures of merit are the best in sub-500mV OTAs reported to date. As the second step, mainly due to the robustness limitation of previous DB-OTA, a novel calibration-free digital-based topology is proposed, named here as Digital OTA (DIG OTA). A 180-nm DIGOTA test chip is also developed exhibiting an area below the 1000 µm2 wall, 2.4nW power under 150pF load, and a minimum VDD of 0.25 V. The proposed DIGOTA is more digital-like compared with DB-OTA since no pseudo-resistor is needed. As the last contribution, the previously proposed DIGOTA is then used as a building block to demonstrate the operation principle of power-efficient ULV and ultra-low area (ULA) fully-differential, digital-based Operational Transconductance Amplifier (OTA), suitable for microscale biosensing applications (BioDIGOTA) such as extreme low area Body Dust. Measured results in 180nm CMOS confirm that the proposed BioDIGOTA can work with a supply voltage down to 400 mV, consuming only 95 nW. The BioDIGOTA layout occupies only 0.022 mm2 of total silicon area, lowering the area by 3.22X times compared to the current state of the art while keeping reasonable system performance, such as 7.6 Noise Efficiency Factor (NEF) with 1.25 µVRMS input-referred noise over a 10 Hz bandwidth, 1.8% of THD, 62 dB of the common-mode rejection ratio (CMRR) and 55 dB of power supply rejection ratio (PSRR). After reviewing the current DCDM trend and all proposed silicon demonstrations, the thesis concludes that, despite the current analog design strategies involved during the analog block development

Design Considerations of a Sub-50 {\mu}W Receiver Front-end for Implantable Devices in MedRadio Band

Emerging health-monitor applications, such as information transmission through multi-channel neural implants, image and video communication from inside the body etc., calls for ultra-low active power (<50${\mu}$W) high data-rate, energy-scalable, highly energy-efficient (pJ/bit) radios. Previous literature has strongly focused on low average power duty-cycled radios or low power but low-date radios. In this paper, we investigate power performance trade-off of each front-end component in a conventional radio including active matching, down-conversion and RF/IF amplification and prioritize them based on highest performance/energy metric. The analysis reveals 50${\Omega}$ active matching and RF gain is prohibitive for 50${\mu}$W power-budget. A mixer-first architecture with an N-path mixer and a self-biased inverter based baseband LNA, designed in TSMC 65nm technology show that sub 50${\mu}$W performance can be achieved up to 10Mbps (< 5pJ/b) with OOK modulation.Comment: Accepted to appear on International Conference on VLSI Design 2018 (VLSID