Study of Layout Techniques in Dynamic Logic Circuitry for Single Event Effect Mitigation

Dynamic logic circuits are highly suitable for high-speed applications, considering the fact that they have a smaller area and faster transition. However, their application in space or other radiation-rich environments has been significantly inhibited by their susceptibility to radiation effects. This work begins with the basic operations of dynamic logic circuits, elaborates upon the physics underlying their radiation vulnerability, and evaluates three techniques that harden dynamic logic from the layout: drain extension, pulse quenching, and a proposed method. The drain extension method adds an extra drain to the sensitive node in order to improve charge sharing, the pulse quenching scheme utilizes charge sharing by duplicating a component that offsets the transient pulse, and the proposed technique takes advantage of both. Domino buffers designed using these three techniques, along with a conventional design as reference, were modeled and simulated using a 3D TCAD tool. Simulation results confirm a significant reduction of soft error rate in the proposed technique and suggest a greater reduction with angled incidence. A 130 nm chip containing designed buffer and register chains was fabricated and tested with heavy ion irradiation. According to the experiment results, the proposed design achieved 30% soft error rate reduction, with 19%, 20%, and 10% overhead in speed, power, and area, respectively

Design and Performance of SiPM-Based Readout of PbF\u3csub\u3e2\u3c/sub\u3e Crystals for High-Rate, Precision Timing Applications

We have developed a custom amplifier board coupled to a large-format 16-channel Hamamatsu silicon photomultiplier device for use as the light sensor for the electromagnetic calorimeters in the Muon g - 2 experiment at Fermilab. The calorimeter absorber is an array of lead-fluoride crystals, which produces short-duration Cherenkov light. The detector sits in the high magnetic field of the muon storage ring. The SiPMs selected, and their accompanying custom electronics, must preserve the short pulse shape, have high quantum efficiency, be non-magnetic, exhibit gain stability under varying rate conditions, and cover a fairly large fraction of the crystal exit surface area. We describe an optimized design that employs the new-generation of thru-silicon via devices. The performance is documented in a series of bench and beam tests

An investigation of the Speed and Power Limitations of a Copper-Doped Gallium Arsenide Photoconductive Switch

The processes of persistent photoconductivity followed by photo-quenching are demonstrated in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse (λ = 1.06 μm) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser (λ= 2.13 μm). Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valence band back into the copper center, and finally on the recombination of electrons in the conduction band with holes in the valence band. The second step requires a sufficient concentration of recombination centers in the material for opening to occur in the subnanosecond regime. Both an experimental and a theoretical investigation of the generation of recombination centers in copper-doped gallium arsenide material, for the purpose of enabling the switch to close as well as open in the subnanosecond regime, is presented. These recombination centers were generated in the bulk GaAs material by fast-neutron irradiation (-1-MeV). An enhanced recombination center density also allows the copper-compensated GaAs switches to open against average electric fields of up to 36 kV/cm corresponding to a switch voltage of 18 kV. Finally, a new high-power radio-frequency (RF) source topology is introduced which uses two copper-doped gallium arsenide switches to synthesize frequency-agile RF waveforms. These waveforms may have considerable advantages when used in high-power-microwave applications

Development of Analogue circuits for the BETA ASIC HERD-FIT detector

The Electronics Instrumentation Service of the Insittute of Cosmos Science of the University of Barcelona (ICCUB-SiUB) is focused on developing ultrafast readout electronics for high-energy physics and medical imaging. In the framework of the HERD project (High Energy Cosmic-Radiation Detector) the group has developed the readout BETA-ASIC to push the limits of dark matter radiation research. Thus, the aim of this Master Thesis is to contribute to the ASIC design. This project presents a low power comparator that will be used for detection triggering as well as internal path selecting of a multi gain system. The comparator has input rail-to-rail and hysteresis feedback. The power consumption is around 60\ \mu W, the gain is 76\ dB and the hysteresis amplitude is about 5.75\ mV. The single-photon SNR is around 10, the delay is 15\ ns and jitter is below\ 100\ ps for input energies higher than 10 pe (photoelectrons). These simulations prove the fulfilment the requirements for the ASIC, and a first prototype has already been sent to be manufactured in April

Probing photo-ionization: Experiments on positive streamers in pure gasses and mixtures

Positive streamers are thought to propagate by photo-ionization whose parameters depend on the nitrogen:oxygen ratio. Therefore we study streamers in nitrogen with 20%, 0.2% and 0.01% oxygen and in pure nitrogen, as well as in pure oxygen and argon. Our new experimental set-up guarantees contamination of the pure gases to be well below 1 ppm. Streamers in oxygen are difficult to measure as they emit considerably less light in the sensitivity range of our fast ICCD camera than the other gasses. Streamers in pure nitrogen and in all nitrogen/oxygen mixtures look generally similar, but become somewhat thinner and branch more with decreasing oxygen content. In pure nitrogen the streamers can branch so much that they resemble feathers. This feature is even more pronounced in pure argon, with approximately 10^2 hair tips/cm^3 in the feathers at 200 mbar; this density could be interpreted as the free electron density creating avalanches towards the streamer stem. It is remarkable that the streamer velocity is essentially the same for similar voltage and pressure in all nitrogen/oxygen mixtures as well as in pure nitrogen, while the oxygen concentration and therefore the photo-ionization lengths vary by more than five orders of magnitude. Streamers in argon have essentially the same velocity as well. The physical similarity of streamers at different pressures is confirmed in all gases; the minimal diameters are smaller than in earlier measurements.Comment: 28 pages, 14 figures. Major differences with v1: - appendix and spectra removed - subsection regarding effects of repetition frequency added - many more smaller change

Modeling Emerging Semiconductor Devices for Circuit Simulation

Circuit simulation is an indispensable part of modern IC design. The significant cost of fabrication has driven researchers to verify the chip functionality through simulation before submitting the design for final fabrication. With the impending end of Moore’s Law, researchers all over the world are looking for new devices with enhanced functionality. A plethora of promising emerging devices has been proposed in recent years. In order to leverage the full potential of such devices, circuit designers need fast, reliable models for SPICE simulation to explore different applications. Most of these new devices have complex underlying physical mechanism rendering the model development an extremely challenging task. For the models to be of practical use, they have to enable fast and accurate simulation that rules out the possibility of numerically solving a system of partial differential equations to arrive at a solution. In this chapter, we show how different modeling approaches can be used to simulate three emerging semiconductor devices namely, silicon- on- insulator four gate transistor(G4FET), perimeter gated single photon avalanche diode (PG-SPAD) and insulator-metal transistor (IMT) device with volatile memristance. All the models have been verified against experimental /TCAD data and implemented in commercial circuit simulator

A Bulk Driven Transimpedance CMOS Amplifier for SiPM Based Detection

The contribution of this work lies in the development of a bulk driven operationaltransconducctance amplifier which can be integrated with other analog circuits andphotodetectors in the same chip for compactness, miniaturization and reducing thepower. Silicon photomultipliers, also known as SiPMs, when coupled with scintillator materials are used in many imaging applications including nuclear detection. This thesis discuss the design of a bulk-driven transimpedance amplifier suitable for detectors where the front end is a SiPM. The amplifier was design and fabricated in a standard standard CMOS process and is suitable for integration with CMOS based SiPMs and commercially available SiPMs. Specifically, the amplifier was verified in simulations and experiment using circuit models for the SiPM. The bulk-driven amplifier’s performance, was compared to a commerciallyavailable amplifier with approximately the same open loop gain (70dB). Bothamplifiers were verified with two different light sources, a scintillator and a SiPM.The energy resolution using the bulk driven amplifier was 8.6% and was 14.2% forthe commercial amplifier indicating the suitability of the amplifier design for portable systems

Millimeter-Precision Laser Rangefinder Using a Low-Cost Photon Counter

In this book we successfully demonstrate a millimeter-precision laser rangefinder using a low-cost photon counter. An application-specific integrated circuit (ASIC) comprises timing circuitry and single-photon avalanche diodes (SPADs) as the photodetectors. For the timing circuitry, a novel binning architecture for sampling the received signal is proposed which mitigates non-idealities that are inherent to a system with SPADs and timing circuitry in one chip