A wideband linear tunable CDTA and its application in field programmable analogue array

This document is the Accepted Manuscript version of the following article: Hu, Z., Wang, C., Sun, J. et al. ‘A wideband linear tunable CDTA and its application in field programmable analogue array’, Analog Integrated Circuits and Signal Processing, Vol. 88 (3): 465-483, September 2016. Under embargo. Embargo end date: 6 June 2017. The final publication is available at Springer via https://link.springer.com/article/10.1007%2Fs10470-016-0772-7 © Springer Science+Business Media New York 2016In this paper, a NMOS-based wideband low power and linear tunable transconductance current differencing transconductance amplifier (CDTA) is presented. Based on the NMOS CDTA, a novel simple and easily reconfigurable configurable analogue block (CAB) is designed. Moreover, using the novel CAB, a simple and versatile butterfly-shaped FPAA structure is introduced. The FPAA consists of six identical CABs, and it could realize six order current-mode low pass filter, second order current-mode universal filter, current-mode quadrature oscillator, current-mode multi-phase oscillator and current-mode multiplier for analog signal processing. The Cadence IC Design Tools 5.1.41 post-layout simulation and measurement results are included to confirm the theory.Peer reviewedFinal Accepted Versio

Chalcogenide Glass-on-Graphene Photonics

Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material which can be directly deposited and patterned on a wide variety of 2-D materials and can simultaneously function as the light guiding medium, a gate dielectric, and a passivation layer for 2-D materials. Besides claiming improved fabrication yield and throughput compared to the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2-D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared (mid-IR) waveguide-integrated photodetectors and modulators

Baseband analog front-end and digital back-end for reconfigurable multi-standard terminals

Multimedia applications are driving wireless network operators to add high-speed data services such as Edge (E-GPRS), WCDMA (UMTS) and WLAN (IEEE 802.11a,b,g) to the existing GSM network. This creates the need for multi-mode cellular handsets that support a wide range of communication standards, each with a different RF frequency, signal bandwidth, modulation scheme etc. This in turn generates several design challenges for the analog and digital building blocks of the physical layer. In addition to the above-mentioned protocols, mobile devices often include Bluetooth, GPS, FM-radio and TV services that can work concurrently with data and voice communication. Multi-mode, multi-band, and multi-standard mobile terminals must satisfy all these different requirements. Sharing and/or switching transceiver building blocks in these handsets is mandatory in order to extend battery life and/or reduce cost. Only adaptive circuits that are able to reconfigure themselves within the handover time can meet the design requirements of a single receiver or transmitter covering all the different standards while ensuring seamless inter-interoperability. This paper presents analog and digital base-band circuits that are able to support GSM (with Edge), WCDMA (UMTS), WLAN and Bluetooth using reconfigurable building blocks. The blocks can trade off power consumption for performance on the fly, depending on the standard to be supported and the required QoS (Quality of Service) leve

A 13-bit, 2.2-MS/s, 55-mW multibit cascade ΣΔ modulator in CMOS 0.7-μm single-poly technology

This paper presents a CMOS 0.7-μm ΣΔ modulator IC that achieves 13-bit dynamic range at 2.2 MS/s with an oversampling ratio of 16. It uses fully differential switched-capacitor circuits with a clock frequency of 35.2 MHz, and has a power consumption of 55 mW. Such a low oversampling ratio has been achieved through the combined usage of fourth-order filtering and multibit quantization. To guarantee stable operation for any input signal and/or initial condition, the fourth-order shaping function has been realized using a cascade architecture with three stages; the first stage is a second-order modulator, while the others are first-order modulators - referred to as a 2-1-1mb architecture. The quantizer of the last stage is 3 bits, while the other quantizers are single bit. The modulator architecture and coefficients have been optimized for reduced sensitivity to the errors in the 3-bit quantization process. Specifically, the 3-bit digital-to-analog converter tolerates 2.8% FS nonlinearity without significant degradation of the modulator performance. This makes the use of digital calibration unnecessary, which is a key point for reduced power consumption. We show that, for a given oversampling ratio and in the presence of 0.5% mismatch, the proposed modulator obtains a larger signal-to-noise-plus-distortion ratio than previous multibit cascade architectures. On the other hand, as compared to a 2-1-1single-bit modulator previously designed for a mixed-signal asymmetrical digital subscriber line modem in the same technology, the modulator in this paper obtains one more bit resolution, enhances the operating frequency by a factor of two, and reduces the power consumption by a factor of four.Comisión Interministerial de Ciencia y Tecnología TIC97-0580European Commission ESPRIT 879

Optical Network Virtualisation using Multi-technology Monitoring and SDN-enabled Optical Transceiver

We introduce the real-time multi-technology transport layer monitoring to facilitate the coordinated virtualisation of optical and Ethernet networks supported by optical virtualise-able transceivers (V-BVT). A monitoring and network resource configuration scheme is proposed to include the hardware monitoring in both Ethernet and Optical layers. The scheme depicts the data and control interactions among multiple network layers under the software defined network (SDN) background, as well as the application that analyses the monitored data obtained from the database. We also present a re-configuration algorithm to adaptively modify the composition of virtual optical networks based on two criteria. The proposed monitoring scheme is experimentally demonstrated with OpenFlow (OF) extensions for a holistic (re-)configuration across both layers in Ethernet switches and V-BVTs

Silicon optical modulators

Optical technology is poised to revolutionise short reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such interconnect is the optical modulator. Modulators have been improved dramatically in recent years. Most notably the bandwidth has increased from the MHz to the multi GHz regime in little more than half a decade. However, the demands of optical interconnect are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimising metrics such as the energy per bit, and device footprint, whilst maximising bandwidth and modulation depth are non trivial demands. All of this must be achieved with acceptable thermal tolerance and optical spectral width, using CMOS compatible fabrication processes. Here we discuss the techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future