Transistor-Level Synthesis of Pipeline Analog-to-Digital Converters Using a Design-Space Reduction Algorithm

A novel transistor-level synthesis procedure for pipeline ADCs is presented. This procedure is able to directly map high-level converter specifications onto transistor sizes and biasing conditions. It is based on the combination of behavioral models for performance evaluation, optimization routines to minimize the power and area consumption of the circuit solution, and an algorithm to efficiently constraint the converter design space. This algorithm precludes the cost of lengthy bottom-up verifications and speeds up the synthesis task. The approach is herein demonstrated via the design of a 0.13 μm CMOS 10 bits@60 MS/s pipeline ADC with energy consumption per conversion of only 0.54 pJ@1 MHz, making it one of the most energy-efficient 10-bit video-rate pipeline ADCs reported to date. The computational cost of this design is of only 25 min of CPU time, and includes the evaluation of 13 different pipeline architectures potentially feasible for the targeted specifications. The optimum design derived from the synthesis procedure has been fine tuned to support PVT variations, laid out together with other auxiliary blocks, and fabricated. The experimental results show a power consumption of 23 [email protected] V and an effective resolution of 9.47-bit@1 MHz. Bearing in mind that no specific power reduction strategy has been applied; the mentioned results confirm the reliability of the proposed approach.Ministerio de Ciencia e Innovación TEC2009-08447Junta de Andalucía TIC-0281

Multi-port Memory Design for Advanced Computer Architectures

In this thesis, we describe and evaluate novel memory designs for multi-port on-chip and off-chip use in advanced computer architectures. We focus on combining multi-porting and evaluating the performance over a range of design parameters. Multi-porting is essential for caches and shared-data systems, especially multi-core System-on-chips (SOC). It can significantly increase the memory access throughput. We evaluate FinFET voltage-mode multi-port SRAM cells using different metrics including leakage current, static noise margin and read/write performance. Simulation results show that single-ended multi-port FinFET SRAMs with isolated read ports offer improved read stability and flexibility over classical double-ended structures at the expense of write performance. By increasing the size of the access transistors, we show that the single-ended multi-port structures can achieve equivalent write performance to the classical double-ended multi-port structure for 9% area overhead. Moreover, compared with CMOS SRAM, FinFET SRAM has better stability and standby power. We also describe new methods for the design of FinFET current-mode multi-port SRAM cells. Current-mode SRAMs avoid the full-swing of the bitline, reducing dynamic power and access time. However, that comes at the cost of voltage drop, which compromises stability. The design proposed in this thesis utilizes the feature of Independent Gate (IG) mode FinFET, which can leverage threshold voltage by controlling the back gate voltage, to merge two transistors into one through high-Vt and low-Vt transistors. This design not only reduces the voltage drop, but it also reduces the area in multi-port current-mode SRAM design. For off-chip memory, we propose a novel two-port 1-read, 1-write (1R1W) phasechange memory (PCM) cell, which significantly reduces the probability of blocking at the bank levels. Different from the traditional PCM cell, the access transistors are at the top and connected to the bitline. We use Verilog-A to model the behavior of Ge2Sb2Te5 (GST: the storage component). We evaluate the performance of the two-port cell by transistor sizing and voltage pumping. Simulation results show that pMOS transistor is more practical than nMOS transistor as the access device when both area and power are considered. The estimated area overhead is 1.7�, compared to single-port PCM cell. In brief, the contribution we make in this thesis is that we propose and evaluate three different kinds of multi-port memories that are favorable for advanced computer architectures

Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis

Accurate Settling-Time Modeling and Design Procedures for Two-Stage Miller-Compensated Amplifiers for Switched-Capacitor Circuits

We present modeling techniques for accurate estimation of settling errors in switched-capacitor (SC) circuits built with Miller-compensated operational transconductance amplifiers (OTAs). One distinctive feature of the proposal is the computation of the impact of signal levels (on both the model parameters and the model structure) as they change during transient evolution. This is achieved by using an event-driven behavioral approach that combines small- and large-signal behavioral descriptions and keeps track of the amplifier state after each clock phase. Also, SC circuits are modeled under closed-loop conditions to guarantee that the results remain close to those obtained by electrical simulation of the actual circuits. Based on these models, which can be regarded as intermediate between the more established small-signal approach and full-fledged simulations, design procedures for dimensioning SC building blocks are presented whose targets are system-level specifications (such as ENOB and SNDR) instead of OTA specifications. The proposed techniques allow to complete top-down model-based designs with 0.3-b accuracy.Ministerio de Educación y Ciencia TEC2006-03022Junta de Andalucía TIC-0281

Current-Mode Techniques for the Implementation of Continuous- and Discrete-Time Cellular Neural Networks

This paper presents a unified, comprehensive approach to the design of continuous-time (CT) and discrete-time (DT) cellular neural networks (CNN) using CMOS current-mode analog techniques. The net input signals are currents instead of voltages as presented in previous approaches, thus avoiding the need for current-to-voltage dedicated interfaces in image processing tasks with photosensor devices. Outputs may be either currents or voltages. Cell design relies on exploitation of current mirror properties for the efficient implementation of both linear and nonlinear analog operators. These cells are simpler and easier to design than those found in previously reported CT and DT-CNN devices. Basic design issues are covered, together with discussions on the influence of nonidealities and advanced circuit design issues as well as design for manufacturability considerations associated with statistical analysis. Three prototypes have been designed for l.6-pm n-well CMOS technologies. One is discrete-time and can be reconfigured via local logic for noise removal, feature extraction (borders and edges), shadow detection, hole filling, and connected component detection (CCD) on a rectangular grid with unity neighborhood radius. The other two prototypes are continuous-time and fixed template: one for CCD and other for noise removal. Experimental results are given illustrating performance of these prototypes

Design of a Folded Cascode Operational Amplifier in a 1.2 Micron Silicon-Carbide CMOS Process

This thesis covers the design of a Folded Cascode CMOS Operational Amplifier (Op-Amp) in Raytheon’s 1.2-micron Silicon Carbide (SiC) process. The use of silicon-carbide as a material for integrated circuits (ICs) is gaining popularity due to its ability to function at high temperatures outside the range of typical silicon ICs. The goal of this design was to create an operational amplifier suitable for use in a high temperature analog-to-digital converter application. The amplifier has been designed to have a DC gain of 50dB, a phase margin of 50 degrees, and a bandwidth of 2 MHz. The circuit’s application includes input ranging from 0 volts to 8 volts so a PMOS input differential pair was selected to allow the input range down to the VSS rail. The circuit has been designed to work over a temperature range of 25°C to 300°C