7,821 research outputs found
Asynchronous Nano-Electronics: Preliminary Investigation
This paper is a preliminary investigation in implementing
asynchronous QDI logic in molecular nano-electronics,
taking into account the restricted geometry, the lack of control
on transistor strengths, the high timing variations. We
show that the main building blocks of QDI logic can be successfully
implemented; we illustrate the approach with the
layout of an adder stage. The proposed techniques to improve
the reliability of QDI apply to nano-CMOS as well
CMOS array design automation techniques
A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed
Current-Mode Techniques for the Implementation of Continuous- and Discrete-Time Cellular Neural Networks
This paper presents a unified, comprehensive approach
to the design of continuous-time (CT) and discrete-time
(DT) cellular neural networks (CNN) using CMOS current-mode
analog techniques. The net input signals are currents instead
of voltages as presented in previous approaches, thus avoiding
the need for current-to-voltage dedicated interfaces in image
processing tasks with photosensor devices. Outputs may be either
currents or voltages. Cell design relies on exploitation of current
mirror properties for the efficient implementation of both linear
and nonlinear analog operators. These cells are simpler and
easier to design than those found in previously reported CT
and DT-CNN devices. Basic design issues are covered, together
with discussions on the influence of nonidealities and advanced
circuit design issues as well as design for manufacturability
considerations associated with statistical analysis. Three prototypes
have been designed for l.6-pm n-well CMOS technologies.
One is discrete-time and can be reconfigured via local logic for
noise removal, feature extraction (borders and edges), shadow
detection, hole filling, and connected component detection (CCD)
on a rectangular grid with unity neighborhood radius. The other
two prototypes are continuous-time and fixed template: one for
CCD and other for noise removal. Experimental results are given
illustrating performance of these prototypes
Investigations on electromagnetic noises and interactions in electronic architectures : a tutorial case on a mobile system
Electromagnetic interactions become critic in embedded and smart electronic structures. The increase of electronic performances confined in a finite volume or support for mobile applications defines new electromagnetic environment and compatibility configurations (EMC). With canonical demonstrators developed for tutorials and EMC experiences, this paper present basic principles and experimental techniques to investigate and control these severe interferences. Some issues are reviewed to present actual and future scientific challenges for EMC at electronic circuit level
Complementary Symmetry Nanowire Logic Circuits: Experimental Demonstrations and in Silico Optimizations
Complementary symmetry (CS) Boolean logic utilizes both p- and n-type field-effect transistors (FETs) so that an input logic voltage signal will turn one or more p- or n-type FETs on, while turning an equal number of n- or p-type FETs off. The voltage powering the circuit is prevented from having a direct pathway to ground, making the circuit energy efficient. CS circuits are thus attractive for nanowire logic, although they are challenging to implement. CS logic requires a relatively large number of FETs per logic gate, the output logic levels must be fully restored to the input logic voltage level, and the logic gates must exhibit high gain and robust noise margins. We report on CS logic circuits constructed from arrays of 16 nm wide silicon nanowires. Gates up to a complexity of an XOR gate (6 p-FETs and 6 n-FETs) containing multiple nanowires per transistor exhibit signal restoration and can drive other logic gates, implying that large scale logic can be implemented using nanowires. In silico modeling of CS inverters, using experimentally derived look-up tables of individual FET properties, is utilized to provide feedback for optimizing the device fabrication process. Based upon this feedback, CS inverters with a gain approaching 50 and robust noise margins are demonstrated. Single nanowire-based logic gates are also demonstrated, but are found to exhibit significant device-to-device fluctuations
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