84 research outputs found

    Formal Verification and Fault Mitigation for Small Avionics Platforms using Programmable Logic

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    As commercial and personal unmanned aircraft gain popularity and begin to account for more traffic in the sky, the reliability and integrity of their flight controllers becomes increasingly important. As these aircraft get larger and start operating over longer distances and at higher altitude they will start to interact with other controlled air traffic and the risk of a failure in the control system becomes much more severe. As any engineer who has investigated any space bound technology will know, digital systems do not always behave exactly as they are supposed to. This can be attributed to the effects of high energy particles in the atmosphere that can deposit energy randomly throughout a digital circuit. These single event effects are capable of producing transient logic levels and altering the state of registers in a circuit, corrupting data and possibly leading to a failure of the flight controller. These effects become more common as altitude increases, as well as with the increase of registers in a digital system. High integrity flight controllers also require more development effort to show that they meet the required standard. Formal methods can be used to verify digital systems and prove that they meet certain specifications. For traditional software systems that perform many tasks on shared computational resources, formal methods can be quite difficult if not impossible to implement. The use of discrete logic controllers in the form of FPGAs greatly simplifies multitasking by removing the need for shared resources. This simplicity allows formal methods to be applied during the development of the flight control algorithms & device drivers. In this thesis we propose and demonstrate a flight controller implemented entirely within an FPGA to investigate the differences and difficulties when compared with traditional CPU software implementations. We go further to provide examples of formal verifications of specific parts of the flight control firmware to demonstrate the ease with which this can be achieved. We also make efforts to protect the flight controller from the effects of radiation at higher altitudes using both passive hardware design and active register transfer level algorithms

    Energy-Efficient Receiver Design for High-Speed Interconnects

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    High-speed interconnects are of vital importance to the operation of high-performance computing and communication systems, determining the ultimate bandwidth or data rates at which the information can be exchanged. Optical interconnects and the employment of high-order modulation formats are considered as the solutions to fulfilling the envisioned speed and power efficiency of future interconnects. One common key factor in bringing the success is the availability of energy-efficient receivers with superior sensitivity. To enhance the receiver sensitivity, improvement in the signal-to-noise ratio (SNR) of the front-end circuits, or equalization that mitigates the detrimental inter-symbol interference (ISI) is required. In this dissertation, architectural and circuit-level energy-efficient techniques serving these goals are presented. First, an avalanche photodetector (APD)-based optical receiver is described, which utilizes non-return-to-zero (NRZ) modulation and is applicable to burst-mode operation. For the purposes of improving the overall optical link energy efficiency as well as the link bandwidth, this optical receiver is designed to achieve high sensitivity and high reconfiguration speed. The high sensitivity is enabled by optimizing the SNR at the front-end through adjusting the APD responsivity via its reverse bias voltage, along with the incorporation of 2-tap feedforward equalization (FFE) and 2-tap decision feedback equalization (DFE) implemented in current-integrating fashion. The high reconfiguration speed is empowered by the proposed integrating dc and amplitude comparators, which eliminate the RC settling time constraints. The receiver circuits, excluding the APD die, are fabricated in 28-nm CMOS technology. The optical receiver achieves bit-error-rate (BER) better than 1E−12 at −16-dBm optical modulation amplitude (OMA), 2.24-ns reconfiguration time with 5-dB dynamic range, and 1.37-pJ/b energy efficiency at 25 Gb/s. Second, a 4-level pulse amplitude modulation (PAM4) wireline receiver is described, which incorporates continuous time linear equalizers (CTLEs) and a 2-tap direct DFE dedicated to the compensation for the first and second post-cursor ISI. The direct DFE in a PAM4 receiver (PAM4-DFE) is made possible by the proposed CMOS track-and-regenerate slicer. This proposed slicer offers rail-to-rail digital feedback signals with significantly improved clock-to-Q delay performance. The reduced slicer delay relaxes the settling time constraint of the summer circuits and allows the stringent DFE timing constraint to be satisfied. With the availability of a direct DFE employing the proposed slicer, inductor-based bandwidth enhancement and loop-unrolling techniques, which can be power/area intensive, are not required. Fabricated in 28-nm CMOS technology, the PAM4 receiver achieves BER better than 1E−12 and 1.1-pJ/b energy efficiency at 60 Gb/s, measured over a channel with 8.2-dB loss at Nyquist frequency. Third, digital neural-network-enhanced FFEs (NN-FFEs) for PAM4 analog-to-digital converter (ADC)-based optical interconnects are described. The proposed NN-FFEs employ a custom learnable piecewise linear (PWL) activation function to tackle the nonlinearities with short memory lengths. In contrast to the conventional Volterra equalizers where multipliers are utilized to generate the nonlinear terms, the proposed NN-FFEs leverage the custom PWL activation function for nonlinear operations and reduce the required number of multipliers, thereby improving the area and power efficiencies. Applications in the optical interconnects based on micro-ring modulators (MRMs) are demonstrated with simulation results of 50-Gb/s and 100-Gb/s links adopting PAM4 signaling. The proposed NN-FFEs and the conventional Volterra equalizers are synthesized with the standard-cell libraries in a commercial 28-nm CMOS technology, and their power consumptions and performance are compared. Better than 37% lower power overhead can be achieved by employing the proposed NN-FFEs, in comparison with the Volterra equalizer that leads to similar improvement in the symbol-error-rate (SER) performance.</p

    Understanding Quantum Technologies 2022

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    Understanding Quantum Technologies 2022 is a creative-commons ebook that provides a unique 360 degrees overview of quantum technologies from science and technology to geopolitical and societal issues. It covers quantum physics history, quantum physics 101, gate-based quantum computing, quantum computing engineering (including quantum error corrections and quantum computing energetics), quantum computing hardware (all qubit types, including quantum annealing and quantum simulation paradigms, history, science, research, implementation and vendors), quantum enabling technologies (cryogenics, control electronics, photonics, components fabs, raw materials), quantum computing algorithms, software development tools and use cases, unconventional computing (potential alternatives to quantum and classical computing), quantum telecommunications and cryptography, quantum sensing, quantum technologies around the world, quantum technologies societal impact and even quantum fake sciences. The main audience are computer science engineers, developers and IT specialists as well as quantum scientists and students who want to acquire a global view of how quantum technologies work, and particularly quantum computing. This version is an extensive update to the 2021 edition published in October 2021.Comment: 1132 pages, 920 figures, Letter forma

    Feature Papers in Electronic Materials Section

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    This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book

    High-Density Solid-State Memory Devices and Technologies

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    This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

    21st Century Nanostructured Materials

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    Nanostructured materials (NMs) are attracting interest as low-dimensional materials in the high-tech era of the 21st century. Recently, nanomaterials have experienced breakthroughs in synthesis and industrial and biomedical applications. This book presents recent achievements related to NMs such as graphene, carbon nanotubes, plasmonic materials, metal nanowires, metal oxides, nanoparticles, metamaterials, nanofibers, and nanocomposites, along with their physical and chemical aspects. Additionally, the book discusses the potential uses of these nanomaterials in photodetectors, transistors, quantum technology, chemical sensors, energy storage, silk fibroin, composites, drug delivery, tissue engineering, and sustainable agriculture and environmental applications

    Silicon Nanodevices

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    This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students

    Miniaturized Transistors, Volume II

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    In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before

    Device and Circuit Level EMI Induced Vulnerability: Modeling and Experiments

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    Electro-magnetic interference (EMI) commonly exists in electronic equipment containing semiconductor-based integrated circuits (ICs). Metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the ICs may be disrupted under EMI conditions due to transient voltage-current surges, and their internal states may change undesirably. In this work, the vulnerabilities of silicon MOSFETs under EMI are studied at the device and the circuit levels, categorized as non-permanent upsets (``Soft Errors'') and permanent damages (``Hard Failures''). The Soft Errors, such as temporary bit errors and waveform distortions, may happen or be intensified under EMI, as the transient disruptions activate unwanted and highly non-linear changes inside MOSFETs, such as Impact Ionization and Snapback. The system may be corrected from the erroneous state when the EMI condition is removed. We simulate planar silicon n-type MOSFETs at the device level to study the physical mechanisms leading to or complicate the short-term, signal-level Soft Errors. We experimentally tested commercially available MOSFET devices. Not included in regular MOSFET models, exponential-like current increases as the terminal voltage increases are observed and explained using the device-level knowledge. We develop a compact Soft Error model, compatible with circuit simulators using lumped (or compact-model) components and closed-form expressions, such as SPICE, and calibrate it with our in-house experimental data using an in-house extraction technique based on the Genetic Algorithm. Example circuits are simulated using the extracted device model and under EMI-induced transient disruptions. The EMI voltage-current disruptions may also lead to permanent Hard Failures that cannot be repaired without replacement. One type of Hard Failures, the MOSFET gate dielectric (or ``oxide'') breakdown, can result in input-output relation changes and additional thermal runaway. We have fabricated individual MOSFET devices at the FabLab at the University of Maryland NanoCenter. We experimentally stress-test the fabricated devices and observe the rapid, permanent oxide breakdown. Then, we simulate a nano-scale FinFET device with ultra-thin gate oxide at the device level. Then, we apply the knowledge from our experiments to the simulated FinFET, producing a gate oxide breakdown Hard Failure circuit model. The proposed workflow enables the evaluation of EMI-induced vulnerabilities in circuit simulations before actual fabrication and experiments, which can help the early-stage prototyping process and reduce the development time

    Microscopy and Analysis

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    Microscopes represent tools of the utmost importance for a wide range of disciplines. Without them, it would have been impossible to stand where we stand today in terms of understanding the structure and functions of organelles and cells, tissue composition and metabolism, or the causes behind various pathologies and their progression. Our knowledge on basic and advanced materials is also intimately intertwined to the realm of microscopy, and progress in key fields of micro- and nanotechnologies critically depends on high-resolution imaging systems. This volume includes a series of chapters that address highly significant scientific subjects from diverse areas of microscopy and analysis. Authoritative voices in their fields present in this volume their work or review recent trends, concepts, and applications, in a manner that is accessible to a broad readership audience from both within and outside their specialist area
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