A CIRCULAR LOOP TIME CONSTANT STANDARD

A time constant standard, developed for the phase angle measurement of precision current shunts is developed and described, and its time constant has been determined. Based on a single circular loop placed in an air thermostat, its construction is very simple and it gives accurate results in the frequency band of interest, e.g. for frequencies between 50 Hz and 100 kHz. The influence of the shielding is calculated using numerical Finite Element Analysis (FEA). The thermostatic stability is analyzed, and the time-constant of the thermostat is determined using temperature measurement and Butterworth filtering. The power coefficient of the standard is determined, and limits of errors are discussed

A CIRCULAR LOOP TIME CONSTANT STANDARD

A time constant standard, developed for the phase angle measurement of precision current shunts is developed and described, and its time constant has been determined. Based on a single circular loop placed in an air thermostat, its construction is very simple and it gives accurate results in the frequency band of interest, e.g. for frequencies between 50 Hz and 100 kHz. The influence of the shielding is calculated using numerical Finite Element Analysis (FEA). The thermostatic stability is analyzed, and the time-constant of the thermostat is determined using temperature measurement and Butterworth filtering. The power coefficient of the standard is determined, and limits of errors are discussed

Langmuir probe electronics upgrade on the tokamak a configuration variable

A detailed description of the Langmuir probe electronics upgrade for TCV (Tokamak a Configuration Variable) is presented. The number of amplifiers and corresponding electronics has been increased from 48 to 120 in order to simultaneously connect all of the 114 Langmuir probes currently mounted in the TCV divertor and main-wall tiles. Another set of 108 amplifiers is ready to be installed in order to connect 80 new probes, built in the frame of the TCV divertor upgrade. Technical details of the amplifier circuitry are discussed as well as improvements over the first generation of amplifiers developed at SPC (formerly CRPP) in 1993/1994 and over the second generation developed in 2012/2013. While the new amplifiers have been operated successfully for over a year, it was found that their silicon power transistors can be damaged during some off-normal plasma events. Possible solutions are discussed. (C) 2019 Author(s)

An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC

Bandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage standard for the entire IC. The accuracy of the bandgap reference voltage under steady-state (dc) and transient (ac) conditions is critical to obtain high system performance. In this work, the impact of process, power-supply, load, and temperature variations and package stresses on the dc and ac accuracy of bandgap reference circuits has been analyzed. Based on this analysis, the a bandgap reference that 1. has high dc accuracy despite process and temperature variations and package stresses, without resorting to expensive trimming or noisy switching schemes, 2. has high dc and ac accuracy despite power-supply variations, without using large off-chip capacitors that increase bill-of-material costs, 3. has high dc and ac accuracy despite load variations, without resorting to error-inducing buffers, 4. is capable of producing a sub-bandgap reference voltage with a low power-supply, to enable it to operate in modern, battery-operated portable applications, 5. utilizes a standard CMOS process, to lower manufacturing costs, and 6. is integrated, to consume less board space has been proposed. The functionality of critical components of the system has been verified through prototypes after which the performance of the complete system has been evaluated by integrating all the individual components on an IC. The proposed CMOS bandgap reference can withstand 5mA of load variations while generating a reference voltage of 890mV that is accurate with respect to temperature to the first order. It exhibits a trimless, dc 3-sigma accuracy performance of 0.84% over a temperature range of -40°C to 125°C and has a worst case ac power-supply ripple rejection (PSRR) performance of 30dB up to 50MHz using 60pF of on-chip capacitance. All the proposed techniques lead to the development of a CMOS bandgap reference that meets the low-cost, high-accuracy demands of state-of-the-art System-on-Chip environments.Ph.D.Committee Chair: Rincon-Mora, Gabriel; Committee Member: Ayazi, Farrokh; Committee Member: Bhatti, Pamela; Committee Member: Leach, W. Marshall; Committee Member: Morley, Thoma

Multi-kilowatt modularized spacecraft power processing system development

A review of existing information pertaining to spacecraft power processing systems and equipment was accomplished with a view towards applicability to the modularization of multi-kilowatt power processors. Power requirements for future spacecraft were determined from the NASA mission model-shuttle systems payload data study which provided the limits for modular power equipment capabilities. Three power processing systems were compared to evaluation criteria to select the system best suited for modularity. The shunt regulated direct energy transfer system was selected by this analysis for a conceptual design effort which produced equipment specifications, schematics, envelope drawings, and power module configurations

Low mass hybrid pixel detectors for the high luminosity LHC upgrade

Reducing material in silicon trackers is of major importance for a good overall detector performance, and poses severe challenges to the design of the tracking system. To match the low mass constraints for trackers in High Energy Physics experiments at high luminosity, dedicated technological developments are required. This dissertation presents three technologies to design low mass hybrid pixel detectors for the high luminosity upgrades of the LHC. The work targets specifically the reduction of the material from the detector services and modules, with novel powering schemes, flip chip and interconnection technologies. A serial powering scheme is prototyped, featuring a new regulator concept, a control and protection element, and AC-coupled data transmission. A modified flip chip technology is developed for thin, large area Front-End chips, and a via last Through Silicon Via process is demonstrated on existing pixel modules. These technologies, their developments, and the achievable material reduction are discussed using the upgrades of the ATLAS pixel detector as a case study

Study of high voltage solar array configurations with integrated power control electronics

Solar array electrical configurations for voltage regulatio

Development and fabrication of advanced battery energy storage system Final report, 27 Sep. 1966 - 26 Oct. 1967

Advanced 28 volt silver-cadmium electrical energy storage syste

On-line Junction Temperature Estimation of SiC Power MOSFETs

L'abstract è presente nell'allegato / the abstract is in the attachmen

Design, Development and Thermal Analysis of Reusable Li-Ion Battery Module for Future Mobile and Stationary Applications

open access articleThe performance, energy storage capacity, safety, and lifetime of lithium-ion battery cells of different chemistries are very sensitive to operating and environmental temperatures. The cells generate heat by current passing through their internal resistances, and chemical reactions can generate additional, sometimes uncontrollable, heat if the temperature within the cells reaches the trigger temperature. Therefore, a high-performance battery cooling system that maintains cells as close to the ideal temperature as possible is needed to enable the highest possible discharge current rates while still providing a sufficient safety margin. This paper presents a novel design, preliminary development, and results for an inexpensive reusable, liquid-cooled, modular, hexagonal battery module that may be suitable for some mobile and stationary applications that have high charge and or discharge rate requirements. The battery temperature rise was measured experimentally for a six parallel 18650 cylindrical cell demonstrator module over complete discharge cycles at discharge rates of 1C, 2C and 3C. The measured temperature rises at the hottest point in the cells, at the anode terminal, were found to be 6, 17 and 22 °C, respectively. The thermal resistance of the system was estimated to be below 0.2 K/W at a coolant flow rate of 0.001 Kg/s. The proposed liquid cooled module appeared to be an effective solution for maintaining cylindrical Li-ion cells close to their optimum working temperature