Radiation effects in spacecraft electronics

Effects on the internal spacecraft electronics due to exposure to the natural and enhanced space radiation environment will be reviewed. The emphasis will be placed on the description of the nature of both the exposure environment and failure mechanisms in semiconductors. Understanding both the system environment and device effects is critical in the use of laboratory simulation environments to obtain the data necessary to design and qualify components for successful application

An Initial study on The Reliability of Power Semiconductor Devices

An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. [1]) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect [2], [3]) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS

Isolating contour information from arbitrary images

Aspects of natural vision (physiological and perceptual) serve as a basis for attempting the development of a general processing scheme for contour extraction. Contour information is assumed to be central to visual recognition skills. While the scheme must be regarded as highly preliminary, initial results do compare favorably with the visual perception of structure. The scheme pays special attention to the construction of a smallest scale circular difference-of-Gaussian (DOG) convolution, calibration of multiscale edge detection thresholds with the visual perception of grayscale boundaries, and contour/texture discrimination methods derived from fundamental assumptions of connectivity and the characteristics of printed text. Contour information is required to fall between a minimum connectivity limit and maximum regional spatial density limit at each scale. Results support the idea that contour information, in images possessing good image quality, is (centered at about 10 cyc/deg and 30 cyc/deg). Further, lower spatial frequency channels appear to play a major role only in contour extraction from images with serious global image defects

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/Niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC states to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well defined multiple QC-states along with a working principle for switching among various states show promise for implementation of multilevel memory devices

Simulation of Heterojunction Bipolar Transistors in Two Dimensions

This work describes the formulation and, development of a two-- dimensional drift-diffusion simulation program for accurate modeling of heterojunction bipolar transistors (HBT\u27s). The model described is a versatile tool for studying HBT\u27s, allowing the user to determine the terminal characteristics and physical operation of devices. Nonplanar structures can be treated, response to transient conditions can be computed, and the high frequency characteristics of transistors may be projected. The formulation of an electron energy balance equation is presented and included in the model in an attempt to more accurately compute high-field transport characteristics. The model is applied to some common design questions and experimental results are reproduced