53 research outputs found

    SiGe-based broadband and high suppression frequency doubler ICs for wireless communications

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    制度:新 ; 報告番号:甲3419号 ; 学位の種類:博士(工学) ; 授与年月日:2011/9/15 ; 早大学位記番号:新574

    Millimeter-Wave CMOS Digitally Controlled Oscillators for Automotive Radars

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    All-Digital-Phase-Locked-Loops (ADPLLs) are ideal for integrated circuit implementations and effectively generate frequency chirps for Frequency-Modulated-Continuous-Wave (FMCW) radar. This dissertation discusses the design requirements for integrated ADPLL, which is used as chirp synthesizer for FMCW automotive radar and focuses on an analysis of the ADPLL performance based on the Digitally-Controlled-Oscillator (DCO) design parameters and the ADPLL configuration. The fundamental principles of the FMCW radar are reviewed and the importance of linear DCO for reliable operation of the synthesizer is discussed. A novel DCO, which achieves linear frequency tuning steps is designed by arranging the available minimum Metal-Oxide-Metal (MoM) capacitor in unique confconfigurations. The DCO prototype fabricated in 65 nm CMOS fullls the requirements of the 77 GHz automotive radar. The resultant linear DCO characterization can effectively drive a chirp generation system in complete FMCW automotive radar synthesizer

    A STUDY ON LOW-PHASE-NOISE 77-GHZ CMOS TRANSMITTER FOR FMCW RADAR

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    학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2017. 2. 남상욱.This thesis presents design methodology and experimental verification of a low-phase-noise 77-GHz CMOS FMCW (Frequency Modulated Continuous Wave) radar transmitter. It is quite difficult to design a low-phase-noise signal generator at millimeter-wave frequencies in CMOS because gain of CMOS transistors is extremely low at those frequencies. When using a frequency multiplier, it is relatively advantageous to design a low-phase-noise signal source because a VCO can be designed at lower frequency band where gain of active devices is high. When using multiple stage frequency multipliers to achieve low-phase-noise performance, the operating frequency range can be reduced and DC power consumption can be increased. Therefore, in this thesis, two methods for realizing 77-GHz CMOS low-phase-noise signal source have been proposed. One method is to combine a ×6 frequency multiplier and a 12.8-GHz FMCW signal generator. In this case, a VCO, an injection-locked VCO buffer, a ×3 frequency multiplier (tripler), and a ×2 frequency multiplier (doubler) constituting the 77-GHz signal generator are designed as a four-stage coupled injection-locked oscillator (ILO) chain which is oscillated and injected into the output signal of the preceding stage. The VCO used in the 12.8-GHz PLL (phase locked loop) was designed using linearized transconductance (LiT: Linearized Transconductance) technology to have low phase noise characteristics and was designed to be simpler than the existing LiT VCO using a 3:2 transformer. Since the PLL is designed as the integer-N type, an external frequency modulated triangular reference signal must be injected into the phase frequency detector (PFD) of the PLL to generate the FMCW signal. The fabricated transmitter chip supports FMCW output signals in the 76.81-77.95 GHz band when supplied with the external reference triangular signal from 50.00 to 50.75 MHz. The RF output power is about 8.9 dBm and consumes 116.7 mW of DC power. The measured phase noise is -91.16 dBc/Hz at the 1-MHz offset of the 76.81-GHz carrier frequency, which is the lowest phase noise characteristic of the previously announced 77-GHz CMOS transmitter and transceiver. A transmitter module for 77-GHz radar performance measurement was fabricated by combining the transmitter chip with the on-chip feeder that can solve the millimeter-wave packaging problem. The other is a method of combining a ×28 frequency multiplier and a 2.75-GHz FMCW signal generator. As in the previous method, the VCO, a ×7 multiplier, and two ×2 multipliers constituting the 77-GHz signal generator are each designed as a 4-stage ILO chain. The VCO used in the 2.75-GHz PLL is designed as a class-C type that improves the startup problem to have low-phase-noise characteristics. As in the previous case, an integer-N type PLL is used. The fabricated transmitter chip supports FMCW output signals in the 76.26-78.23 GHz band when supplied with the external reference triangular signal from 42.55 to 43.65 MHz. The RF output power is about -18 dBm and consumes 195.4 mW of DC power. The measured phase noise is -93.64 dBc/Hz at the 1-MHz offset of the 78.13-GHz carrier frequency, which is even lower phase noise characteristic than the ×6 frequency multiplier based transmitter chip.Chapter 1. Introduction 1 1.1 Types and Applications of Automotive Radars 2 1.1 Research Strategy 7 Chapter 2. Frequency and Architecture selection 12 2.1 LiT VCO 14 2.2 Class-C VCO 19 2.3 Injection-Locked Oscillator Chain 24 2.4 Summary 29 Chapter 3. 77-GHz FMCW Radar Transmitter with 12.8-GHz PLL and 6 Frequency Multiplier 30 3.1 Proposed LiT VCO 33 3.2 6 Multiplier and Power Amplifier 40 3.3 Measurement Results 46 3.3.1 LiT VCO Measurement Results 46 3.3.2 77-GHz Transmitter (v1) Measurement Results 49 3.4 Summary 60 Chapter 4. 77-GHz FMCW Radar Transmitter with 2.75-GHz PLL and 28 Frequency Multiplier 62 4.1 Proposed class-C VCO 65 4.2 28 Multiplier and Power Amplifier 73 4.3 Measurement Results 80 4.3.1 Class-C VCO Measurement Results 80 4.3.2 77-GHz Transmitter (v2) Measurement Results 83 4.4 Summary 90 Chapter 5. Conclusion 92 Bibliography 94 Abstract 97Docto

    Millimeter-wave Communication and Radar Sensing — Opportunities, Challenges, and Solutions

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    With the development of communication and radar sensing technology, people are able to seek for a more convenient life and better experiences. The fifth generation (5G) mobile network provides high speed communication and internet services with a data rate up to several gigabit per second (Gbps). In addition, 5G offers great opportunities of emerging applications, for example, manufacture automation with the help of precise wireless sensing. For future communication and sensing systems, increasing capacity and accuracy is desired, which can be realized at millimeter-wave spectrum from 30 GHz to 300 GHz with several tens of GHz available bandwidth. Wavelength reduces at higher frequency, this implies more compact transceivers and antennas, and high sensing accuracy and imaging resolution. Challenges arise with these application opportunities when it comes to realizing prototype or demonstrators in practice. This thesis proposes some of the solutions addressing such challenges in a laboratory environment.High data rate millimeter-wave transmission experiments have been demonstrated with the help of advanced instrumentations. These demonstrations show the potential of transceiver chipsets. On the other hand, the real-time communication demonstrations are limited to either low modulation order signals or low symbol rate transmissions. The reason for that is the lack of commercially available high-speed analog-to-digital converters (ADCs); therefore, conventional digital synchronization methods are difficult to implement in real-time systems at very high data rates. In this thesis, two synchronous baseband receivers are proposed with carrier recovery subsystems which only require low-speed ADCs [A][B].Besides synchronization, high-frequency signal generation is also a challenge in millimeter-wave communications. The frequency divider is a critical component of a millimeter-wave frequency synthesizer. Having both wide locking range and high working frequencies is a challenge. In this thesis, a tunable delay gated ring oscillator topology is proposed for dual-mode operation and bandwidth extension [C]. Millimeter-wave radar offers advantages for high accuracy sensing. Traditional millimeter-wave radar with frequency-modulated continuous-wave (FMCW), or continuous-wave (CW), all have their disadvantages. Typically, the FMCW radar cannot share the spectrum with other FMCW radars.\ua0 With limited bandwidth, the number of FMCW radars that could coexist in the same area is limited. CW radars have a limited ambiguous distance of a wavelength. In this thesis, a phase-modulated radar with micrometer accuracy is presented [D]. It is applicable in a multi-radar scenario without occupying more bandwidth, and its ambiguous distance is also much larger than the CW radar. Orthogonal frequency-division multiplexing (OFDM) radar has similar properties. However, its traditional fast calculation method, fast Fourier transform (FFT), limits its measurement accuracy. In this thesis, an accuracy enhancement technique is introduced to increase the measurement accuracy up to the micrometer level [E]

    Voltage controlled oscillator for mm-wave radio systems

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    Abstract. The advancement in silicon technology has accelerated the development of integrated millimeter-wave transceiver systems operating up to 100 GHz with sophisticated functionality at a reduced consumer cost. Due to the progress in the field of signal processing, frequency modulated continuous wave (FMCW) radar has become common in recent years. A high-performance local oscillator (LO) is required to generate reference signals utilized in these millimeter-wave radar transceivers. To accomplish this, novel design techniques in fundamental voltage controlled oscillators (VCO) are necessary to achieve low phase noise, wide frequency tuning range, and good power efficiency. Although integrated VCOs have been studied for decades, as we move higher in the radio frequency spectrum, there are new trade-offs in the performance parameters that require further characterization. The work described in this thesis aims to design a fully integrated fundamental VCO targeting to 150 GHz, i.e., D-Band. The purpose is to observe and analyze the design limitations at these high frequencies and their corresponding trade-offs during the design procedure. The topology selected for this study is the cross-coupled LC tank VCO. For the study, two design topologies were considered: a conventional cross-coupled LC tank VCO and an inductive divider cross-coupled LC tank VCO. The conventional LC tank VCO yields better performance in terms of phase noise and tuning range. It is observed that the VCO is highly sensitive to parasitic contributions by the transistors, and the layout interconnects, thus limiting the targeted frequency range. The dimensions of the LC tank and the transistors are selected carefully. Moreover, the VCO performance is limited by the low Q factor of the LC tank governed by the varactor that is degrading the phase noise performance and the tuning range, respectively. The output buffer loaded capacitance and the core power consumption of the VCO are optimized. The layout is drawn carefully with strategies to minimize the parasitic effects. Considering all the design challenges, a 126 GHz VCO with a tuning range of 3.9% is designed. It achieves FOMT (Figure-of-merit) of -172 dBc/Hz, and phase noise of -99.14 dBc/Hz at 10 MHz offset, Core power consumption is 8.9 mW from a 1.2 V supply. Just falling short of the targeted frequency, the design is suitable for FMCW radar applications for future technologies. The design was done using Silicon-on-Insulator (SOI) CMOS technology

    Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

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    This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance

    Optoelectronic oscillator for 5G wireless networks and beyond

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    With the development of 5G wireless network and beyond, the wireless carrier frequency will definitely reach millimeter-wave (mm-wave) and even terahertz (THz). As one of the key elements in wireless networks, the local oscillator (LO) needs to operate at mm-wave and THz band with lower phase noise, which becomes a major challenge for commercial LOs. In this article, we investigate the recent developments of the electronic integrated circuit (EIC) oscillator and the optoelectronic oscillator (OEO), and especially investigate the prospect of OEO serving as a qualified LO in the 5G wireless network and beyond. Both the EIC oscillators and OEOs are investigated, including their basic theories of operation, representative techniques and some milestones in applications. Then, we compare the performances between the EIC oscillators and the OEOs in terms of frequency accuracy, phase noise, power consumption and cost. After describing the specific requirements of LO based on the standard of 5G and 6G wireless communication systems, we introduce an injection-locked OEO architecture which can be implemented to distribute and synchronize LOs. The OEO has better phase noise performance at high frequency, which is greatly desired for LO in 5G wireless network and beyond. Besides, the OEO provides an easy and low-loss method to distribute and synchronize mm-wave and THz LOs. Thanks to photonic integrated circuit development, the power consumption and cost of OEO reduce gradually. It is foreseeable that the integrated OEO with lower cost may have a promising prospect in the 5G wireless network and beyond
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