3중 샘플링 방식 델타-시그마 ADC를 이용한 디지털 Capacitive MEMS 마이크로폰

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022. 8. 김수환.본 논문에서는 트리플 샘플링 적분기를 사용한 Capacitive 방식의 MEMS 마이크로폰이 제시되었다. 트리플 샘플링은 델타-시그마 방식의 아날로그-디지털 변환기의 첫 번째 적분기에 사용되었고 크게 두 가지의 동작으로 구분된다. 첫 번째로 적분기의 입력에서 반주기 지연 차동 입력을 빼서 신호 크기를 2배로 만들는 방식. 두 번째로 DAC의 피드백 커패시터를 샘플링 커패시터로 사용하여 입력 전압을 추가로 증가시키는 방식이다. 추가적으로 기존에서 샘플링 커패시터를 증가시켜 신호의 크기를 증폭시키는 방식과 결합하여 실수배의 이득을 얻을 수 있다. 또한 추가적인 커패시터, 타이밍, 전류 소모 없이 구조 변경만으로 이를 달성하였기 때문에 별다른 trade-off 없이 신호의 크기를 증폭시킬 수 있었다. 추가적으로 트리플 샘플링 방식의 적분기 신호 전달 함수 및 잡음 분석 또한 포함하였다. 우리의 readout 회로는 공급 전압이 1.8V인 0.18 m CMOS 공정으로 구현하였고 single-ended capacitive MEMS 트랜스듀서를 사용하여 측정하였다. 전류 소모량은 520 μA 이다. 마이크로폰은 A-weighted 신호 대 잡음 비는 62.1 dBA, 음향 과부하 지점은 115 dB SPL을 달성하였고 칩의 die size는 0.98〖"mm" 〗^2 이다.A triple-sampling ΔΣ ADC can replace the programmable-gain amplifier commonly used in the readout circuit for a digital capacitive MEMS microphone. The input voltage can then be multiplied by subtracting a further half-period delayed differential input and using the feedback capacitor of the DAC as a sampling capacitor. This triple-sampling technique results in a readout circuit with sensitivity and noise performance comparable to recent designs, but with a reduced power requirement. CMRR improvement is achieved by subtracting differential inputs and superior noise performance compare to conventional structure, as amplifier noise and DAC kT/C noise is not amplified by triple-sampling structure while the signal is increased by its gain. Triple-sampling also can be operated as a single-to-differential circuit. A MEMS microphone incorporating this readout circuit, fabricated in a 0.18μm CMOS process, achieved an A-weighted SNR of 62.1 dBA at 94 dB SPL with 520 μA current consumption, to which triple-sampling was shown to contribute 4.5 dBA.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.1.1 MEMS MICROPHONE TRENDS 1 1.1.2 TYPE OF MEMS MICROPHONES 4 1.1.3 PREVIOUS WORKS 7 1.2 MEMS MICROPHONE BASIC TERMS 9 1.3 THESIS ORGANIZATION 12 CHAPTER 2 SYSTEM OVERVIEW 13 2.1 SYSTEM ARCHITECTURE 13 CHAPTER 3 INTERFACE CIRCUITS AND POWER MANAGEMENT CIRCUITS 16 3.1 PSEUDO-DIFFERENTIAL SOURCE FOLLOWER 17 3.2 CHARGE PUMP 19 3.3 LOW DROPOUT REGULATOR 22 3.3.1 DESIGN CONSIDERATION OF LOW DROPOUT REGULATOR 22 3.3.2 IMPLEMENTATION OF LOW DROPOUT REGULATOR 26 CHAPTER 4 TRIPLE-SAMPLING DELTA-SIGMA ADC 31 4.1 BASIC OF DELTA-SIGMA ADC 31 4.2 IMPLEMENTATION OF TRIPLE-SAMPLING DELTA-SIGMA MODULATOR 37 4.2.1 CONVENTIONAL 1ST INTEGRATOR STRUCTURE 37 4.2.2 CROSS-SAMPLING 1ST INTEGRATOR 40 4.2.3 TRIPLE-SAMPLING 1ST INTEGRATOR 43 4.2.4 STF ANALYSIS OF TRIPLE-SAMPLING 1ST INTEGRATOR 47 4.2.5 THERMAL NOISE ANALYSIS OF TRIPLE-SAMPLING 1ST INTEGRATOR 51 4.2 CIRCUIT IMPLEMENTATION OF DELTA-SIGMA ADC 57 CHAPTER 5 MEASUREMENT RESULTS 64 5.1 MEASUREMENT ENVIRONMENT 64 5.2 MEASUREMENT RESULTS 67 5.3 PERFORMANCE SUMMARY 72 CHAPTER 6 CONCLUSION 74 BIBLIOGRAPHY 76 한글초록 79박

Using a Second Order Sigma-Delta Control to Improve the Performance of Metal-Oxide Gas Sensors

Controls of surface potential have been proposed to accelerate the time response of MOX gas sensors. These controls use temperature modulations and a feedback loop based on first-order sigma-delta modulators to keep constant the surface potential. Changes in the surrounding gases, therefore, must be compensated by average temperature produced by the control loop, which is the new output signal. The purpose of this paper is to present a second order sigma-delta control of the surface potential for gas sensors. With this new control strategy, it is possible to obtain a second order zero of the quantization noise in the output signal. This provides a less noisy control of the surface potential, while at the same time some undesired effects of first order modulators, such as the presence of plateaus, are avoided. Experiments proving these performance improvements are presented using a gas sensor made of tungsten oxide nanowires. Plateau avoidance and second order noise shaping is shown with ethanol measurements.Postprint (author's final draft

A 0.35 μm CMOS 17-bit@40-kS/s cascade 2-1 ΣΔ modulator with programmable gain and programmable chopper stabilization

This paper describes a 0.35μm CMOS chopper-stabilized Switched-Capacitor 2-1 cascade ΣDelta; modulator for automotive sensor interfaces. For a better fitting to the characteristics of different sensor outputs, the modulator includes a programmable set of gains (x0.5, x1, x2, and x4) and a programmable set of chopper frequencies (fs/16, fs/8, fs/4 and fs/2). It has also been designed to operate within the restrictive environmental conditions of automotive electronics (-40°C, 175°C). The modulator architecture has been selected after an exhaustive comparison among multiple ΣΔM topologies in terms of resolution, speed and power dissipation. The design of the modulator building blocks is based upon a top-down CAD methodology which combines simulation and statistical optimization at different levels of the modulator hierarchy. The circuit is clocked at 5.12MHz and consumes, all together, 14.7mW from a single 3.3-V supply. Experimental measurements result in 99.77dB of Dynamic Range (DR), which combined with the gain programmability leads to an overall DR of 112dB. This puts the presented design beyond the state-of-the-art according with the existing bibliography

Integrated temperature sensors in deep sub-micron CMOS technologies

textIntegrated temperature sensors play an important role in enhancing the performance of on-chip power and thermal management systems in today's highly-integrated system-on-chip (SoC) platforms, such as microprocessors. Accurate on-chip temperature measurement is essential to maximize the performance and reliability of these SoCs. However, due to non-uniform power consumption by different functional blocks, microprocessors have fairly large thermal gradient (and variation) across their chips. In the case of multi-core microprocessors for example, there are task-specific thermal gradients across different cores on the same die. As a result, multiple temperature sensors are needed to measure the temperature profile at all relevant coordinates of the chip. Subsequently, the results of the temperature measurements are used to take corrective measures to enhance the performance, or save the SoC from catastrophic over-heating situations which can cause permanent damage. Furthermore, in a large multi-core microprocessor, it is also imperative to continuously monitor potential hot-spots that are prone to thermal runaway. The locations of such hot spots depend on the operations and instruction the processor carries out at a given time. Due to practical limitations, it is an overkill to place a big size temperature sensor nearest to all possible hot spots. Thus, an ideal on-chip temperature sensor should have minimal area so that it can be placed non-invasively across the chip without drastically changing the chip floor plan. In addition, the power consumption of the sensors should be very low to reduce the power budget overhead of thermal monitoring system, and to minimize measurement inaccuracies due to self-heating. The objective of this research is to design an ultra-small size and ultra-low power temperature sensor such that it can be placed in the intimate proximity of all possible hot spots across the chip. The general idea is to use the leakage current of a reverse-bias p-n junction diode as an operand for temperature sensing. The tasks within this project are to examine the theoretical aspect of such sensors in both Silicon-On-Insulator (SOI), and bulk Complementary Metal-Oxide Semiconductor (CMOS) technologies, implement them in deep sub-micron technologies, and ultimately evaluate their performances, and compare them to existing solutions.Electrical and Computer Engineerin

Theory and applications of delta-sigma analogue-to-digital converters without negative feedback

Analog-to-digital converters play a crucial role in modern audio and communication design. Conventional Nyquist converters are suitable only for medium resolutions and require analog components that are precise and highly immune to noise and interference. In contrast, oversampling converters can achieve high resolutions (>20bits) and can be implemented using straightforward, high-tolerance analog components. In conventional oversampled modulators, negative feedback is applied in order to control the dynamic behavior of a system and to realize the attenuation of the quantization noise in the signal band due to noise shaping. However, feedback can also introduce undesirable effects such as limit cycles, jitter problems in continuous-time topologies, and infinite impulse responses. Additionally, it increases the system complexity due to extra circuit components such as nonlinear multi-bit digital-to-analog converters in the feedback path. Moreover, in certain applications such as wireless, biomedical sensory, or microphone implementations feedback cannot be applied. As a result, the main goal of this thesis is to develop sigma-delta data converters without feedback. Various new delta-sigma analog-to-digital converter topologies are explored their mathematical models are presented. Simulations are carried out to validate these models and to show performance results. Specifically, two topologies, a first-order and a second-order oscillator-based delta-sigma modulator without feedback are described in detail. They both can be implemented utilizing VCOs and standard digital gates, thus requiring only few components. As proof of concept, two digital microphones based on these delta-sigma converters without feedback were implemented and experimental results are given. These results show adequate performance and provide a new approach of measuring

Linearization of Time-encoded ADCs Architectures for Smart MEMS Sensors in Low Power CMOS Technology

Mención Internacional en el título de doctorIn the last few years, the development of mobile technologies and machine learning applications has increased the demand of MEMS-based digital microphones. Mobile devices have several microphones enabling noise canceling, acoustic beamforming and speech recognition. With the development of machine learning applications the interest to integrate sensors with neural networks has increased. This has driven the interest to develop digital microphones in nanometer CMOS nodes where the microphone analog-front end and digital processing, potentially including neural networks, is integrated on the same chip. Traditionally, analog-to-digital converters (ADCs) in digital microphones have been implemented using high order Sigma-Delta modulators. The most common technique to implement these high order Sigma-Selta modulators is switchedcapacitor CMOS circuits. Recently, to reduce power consumption and make them more suitable for tasks that require always-on operation, such as keyword recognition, switched-capacitor circuits have been improved using inverter-based operational amplifier integrators. Alternatively, switched-capacitor based Sigma- Delta modulators have been replaced by continuous time Sigma-Delta converters. Nevertheless, in both implementations the input signal is voltage encoded across the modulator, making the integration in smaller CMOS nodes more challenging due to the reduced voltage supply. An alternative technique consists on encoding the input signal on time (or frequency) instead of voltage. This is what time-encoded converters do. Lately, time-encoding converters have gained popularity as they are more suitable to nanometer CMOS nodes than Sigma-Delta converters. Among the ones that have drawn more interest we find voltage-controlled oscillator based ADCs (VCOADCs). VCO-ADCs can be implemented using CMOS inverter based ring oscillators (RO) and digital circuitry. They also show noise-shaping properties. This makes them a very interesting alternative for implementation of ADCs in nanometer CMOS nodes. Nevertheless, two main circuit impairments are present in VCO-ADCs, and both come from the oscillator non-idealities. The first of them is the oscillator phase noise, that reduces the resolution of the ADC. The second is the non-linear tuning curve of the oscillator, that results in harmonic distortion at medium to high input amplitudes. In this thesis we analyze the use of time encoding ADCs for MEMS microphones with special focus on ring oscillator based ADCs (RO-ADCs). Firstly, we study the use of a dual-slope based SAR noise shaped quantizer (SAR-NSQ) in sigma-delta loops. This quantizer adds and extra level of noise-shaping to the modulator, improving the resolution. The quantizer is explained, and equations for the noise transfer function (NTF) of a third order sigma-delta using a second order filter and the NSQ are presented. Secondly, we move our attention to the topic of RO-ADCs. We present a high dynamic range MEMS microphone 130nm CMOS chip based on an open-loop VCO-ADC. This dissertation shows the implementation of the analog front-end that includes the oscillator and the MEMS interface, with a focus on achieving low power consumption with low noise and a high dynamic range. The digital circuitry is left to be explained by the coauthor of the chip in his dissertation. The chip achieves a 80dBA peak SNDR and 108dB dynamic range with a THD of 1.5% at 128 dBSPL with a power consumption of 438μW. After that, we analyze the use of a frequency-dependent-resistor (FDR) to implement an unsampled feedback loop around the oscillator. The objective is to reduce distortion. Additionally phase noise mitigation is achieved. A first topology including an operational amplifier to increase the loop gain is analyzed. The design is silicon proven in a 130 nm CMOS chip that achieves a 84 dBA peak SNDR with an analog power consumption of 600μW. A second topology without the operational amplifier is also analyzed. Two chips are designed with this topology. The first chip in 130 nm CMOS is a full VCO-ADC including the frequencyto- digital converter (F2D). This chip achieves a peak SNDR of 76.6 dBA with a power consumption of 482μW. The second chip includes only the oscillator and is implemented in 55nm CMOS. The peak SNDR is 78.15 dBA and the analog power consumption is 153μW. To finish this thesis, two circuits that use an FDR with a ring oscillator are presented. The first is a capacity-to-digital converter (CDC). The second is a filter made with an FDR and an oscillator intended for voice activity detection tasks (VAD).En los últimos años, el desarrollo de las tecnologías móviles y las aplicaciones de machine-learning han aumentado la demanda de micrófonos digitales basados en MEMS. Los dipositivos móviles tienen varios micrófonos que permiten la cancelación de ruido, el beamforming o conformación de haces y el reconocimiento de voz. Con el desarrollo de aplicaciones de aprendizaje automático, el interés por integrar sensores con redes neuronales ha aumentado. Esto ha impulsado el interés por desarrollar micrófonos digitales en nodos CMOS nanométricos donde el front-end analógico y el procesamiento digital del micrófono, que puede incluir redes neuronales, está integrado en el mismo chip. Tradicionalmente, los convertidores analógicos-digitales (ADC) en micrófonos digitales han sido implementados utilizando moduladores Sigma-Delta de orden elevado. La técnica más común para implementar estos moduladores Sigma- Delta es el uso de circuitos CMOS de capacidades conmutadas. Recientemente, para reducir el consumo de potencia y hacerlos más adecuados para las tareas que requieren una operación continua, como el reconocimiento de palabras clave, los convertidores Sigma-Delta de capacidades conmutadas has sido mejorados con el uso de integradores implementados con amplificadores operacionales basados en inversores CMOS. Alternativamente, los Sigma-Delta de capacidades conmutadas han sido reemplazados por moduladores en tiempo continuo. No obstante, en ambas implementaciones, la señal de entrada es codificada en voltaje durante el proceso de conversión, lo que hace que la integración en nodos CMOS más pequeños sea complicada debido a la menor tensión de alimentación. Una técnica alternativa consiste en codificar la señal de entrada en tiempo (o frecuencia) en lugar de tensión. Esto es lo que hacen los convertidores de codificación temporal. Recientemente, los convertidores de codificación temporal han ganado popularidad ya que son más adecuados para nodos CMOS nanométricos que los convertidores Sigma-Delta. Entre los que más interés han despertado encontramos los ADCs basados en osciladores controlados por tensión (VCO-ADC). Los VCO-ADC se pueden implementar usando osciladores en anillo (RO) implementados con inversores CMOS y circuitos digitales. Esta familia de convertidores también tiene conformado de ruido. Esto los convierte en una alternativa muy interesante para la implementación de convertidores en nodos CMOS nanométricos. Sin embargo, dos problemas principales están presentes en este tipo de ADCs debidos ambos a las no idealidades del oscilador. El primero de los problemas es la presencia de ruido de fase en el oscilador, lo que reduce la resolución del ADC. El segundo es la curva de conversion voltaje-frecuencia no lineal del oscilador, lo que causa distorsión a amplitudes medias y altas. En esta tesis analizamos el uso de ADCs de codificación temporal para micrófonos MEMS, con especial interés en ADCS basados en osciladores de anillo (RO-ADC). En primer lugar, estudiamos el uso de un cuantificador SAR con conformado de ruido (SAR-NSQ) en moduladores Sigma-Delta. Este cuantificador agrega un orden adicional de conformado de ruido al modulador, mejorando la resolución. En este documento se explica el cuantificador y obtienen las ecuaciones para la función de transferencia de ruido (NTF) de un sigma-delta de tercer orden usando un filtro de segundo orden y el NSQ. En segundo lugar, dirigimos nuestra atención al tema de los RO-ADC. Presentamos el chip de un micrófono MEMS de alto rango dinámico en CMOS de 130 nm basado en un VCO-ADC de bucle abierto. En esta tesis se explica la implementación del front-end analógico que incluye el oscilador y la interfaz con el MEMS. Esta implementación se ha llevado a cabo con el objetivo de lograr un bajo consumo de potencia, un bajo nivel de ruido y un alto rango dinámico. La descripción del back-end digital se deja para la tesis del couator del chip. La SNDR de pico del chip es de 80dBA y el rango dinámico de 108dB con una THD de 1,5% a 128 dBSPL y un consumo de potencia de 438μW. Finalmente, se analiza el uso de una resistencia dependiente de frecuencia (FDR) para implementar un bucle de realimentación no muestreado alrededor del oscilador. El objetivo es reducir la distorsión. Además, también se logra la mitigación del ruido de fase del oscilador. Se analyza una primera topologia de realimentación incluyendo un amplificador operacional para incrementar la ganancia de bucle. Este diseño se prueba en silicio en un chip CMOS de 130nm que logra un pico de SNDR de 84 dBA con un consumo de potencia de 600μW en la parte analógica. Seguidamente, se analiza una segunda topología sin el amplificador operacional. Se fabrican y miden dos chips diseñados con esta topologia. El primero de ellos en CMOS de 130 nm es un VCO-ADC completo que incluye el convertidor de frecuencia a digital (F2D). Este chip alcanza un pico SNDR de 76,6 dBA con un consumo de potencia de 482μW. El segundo incluye solo el oscilador y está implementado en CMOS de 55nm. El pico SNDR es 78.15 dBA y el el consumo de potencia analógica es de 153μW. Para cerrar esta tesis, se presentan dos circuitos que usan la FDR con un oscilador en anillo. El primero es un convertidor de capacidad a digital (CDC). El segundo es un filtro realizado con una FDR y un oscilador, enfocado a tareas de detección de voz (VAD).Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Antonio Jesús Torralba Silgado.- Secretaria: María Luisa López Vallejo.- Vocal: Pieter Rombout

Design, analysis and evaluation of sigma-delta based beamformers for medical ultrasound imaging applications

The inherent analogue nature of medical ultrasound signals in conjunction with the abundant merits provided by digital image acquisition, together with the increasing use of relatively simple front-end circuitries, have created considerable demand for single-bit beamformers in digital ultrasound imaging systems. Furthermore, the increasing need to design lightweight ultrasound systems with low power consumption and low noise, provide ample justification for development and innovation in the use of single-bit beamformers in ultrasound imaging systems. The overall aim of this research program is to investigate, establish, develop and confirm through a combination of theoretical analysis and detailed simulations, that utilize raw phantom data sets, suitable techniques for the design of simple-to-implement hardware efficient digital ultrasound beamformers to address the requirements for 3D scanners with large channel counts, as well as portable and lightweight ultrasound scanners for point-of-care applications and intravascular imaging systems. In addition, the stability boundaries of higher-order High-Pass (HP) and Band-Pass (BP) Σ−Δ modulators for single- and dual- sinusoidal inputs are determined using quasi-linear modeling together with the describing-function method, to more accurately model the modulator quantizer. The theoretical results are shown to be in good agreement with the simulation results for a variety of input amplitudes, bandwidths, and modulator orders. The proposed mathematical models of the quantizer will immensely help speed up the design of higher order HP and BP Σ−Δ modulators to be applicable for digital ultrasound beamformers. Finally, a user friendly design and performance evaluation tool for LP, BP and HP modulators is developed. This toolbox, which uses various design methodologies and covers an assortment of modulators topologies, is intended to accelerate the design process and evaluation of modulators. This design tool is further developed to enable the design, analysis and evaluation of beamformer structures including the noise analyses of the final B-scan images. Thus, this tool will allow researchers and practitioners to design and verify different reconstruction filters and analyze the results directly on the B-scan ultrasound images thereby saving considerable time and effort