Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications

InP based InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs) have shown outstanding performances, which makes them prominent in high frequency mm-wave and submillimeter-wave applications. However, conventional InGaAs/InAlAs pHEMTs have major drawbacks, i.e., very low breakdown voltage and high gate leakage current. These disadvantages degrade device performance, especially in Monolithic Microwave Integrated Circuit (MMIC) low noise amplifiers (LNAs). The optimisation of InAlAs/InGaAs epilayer structures through advanced bandgap engineering together with gate length reduction from 1 m into deep sub-μm regime is the key solution to enabled high breakdown and ultra-high speed, low noise pHEMT devices to be fabricated. Concurrently, device modelling plays a vital role in the design and analysis of pHEMT device and circuit performance. Physical modeling becomes essential to fully characterise and understand the underlying physical phenomenon of the device, while empirical modelling is significant in circuit design and predicts device’s characteristic performance. In this research, the main objectives to accurately model the DC and RF characteristics of the two-dimensional (2D) physical modelling for sub-μm gate length for strained channel InAlAs/InGaAs/InP pHEMT has been accomplished and developed in ATLAS Silvaco. All modelled devices were optimised and validated by experimental devices which were fabricated at the University of Manchester; the sub-micrometer devices were developed with T-gate using I-line optical lithography. The underlying device physics insight are gained, i.e, the effects of changes to the device’s physical structure, theoretical concepts and its general operation, hence a reliable pHEMT model is obtained. The kink anomalies in I-V characteristics was reproduced and the 2D simulation results demonstrate an outstanding agreement with measured DC and RF characteristics. The aims to develop linear and nonlinear models for sub-μm transistors and their implementation in MMIC LNA design is achieved with the 0.25 m In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT. An accurate technique for the extraction of empirical models for the fabricated active devices has been developed and optimised using Advance Design System (ADS) software which demonstrate excellent agreement between experimental and modelled DC and RF data. A precise models for MMIC passive devices have also been obtained and incorporated in the proposed design for a single and double stage MMIC LNAs in C- and X-band frequency. The single stage LNA is designed to achieve maximum gain ranging from 9 to 13 dB over the band of operation while the gain is increased between 20 dB and 26 dB for the double stage LNA designs. A noise figure of less than 1.2 dB and 2 dB is expected respectively, for the C- and X-band LNA designed while retaining stability across the entire frequency bands. Although the RF performance of pHEMT is being vigorously pushed towards terahertz region, novel devices such as Resonant Tunnelling Diode (RTD) are needed to support future ultra-high speed, high frequency applications especially when it comes to THz frequencies. Hence, the study of physical modelling is extended to quantum modelling of an advanced In0.8Ga0.2As/AlAs RTD device to effectively model both large size and submicron RTD using Silvaco’s ATLAS software to reproduce the peak current density, peak-to-valley-current ratio (PVCR), and negative differential resistance (NDR) voltage range. The simple one-dimensional physical modelling for the RTD devices is optimised to achieve an excellent match with the fabricated RTD devices with variations in the spacer thickness, barrier thickness, quantum well thickness and doping concentration

Accident prediction using machine learning:analyzing weather conditions, and model performance

Abstract. The primary focus of this study was to investigate the impact of weather and road conditions on the severity of accidents and to determine the feasibility of machine learning models in accurately predicting the likelihood of such incidents. The research was centered on two key research questions. Firstly, the study examined the influence of weather and road conditions on accident severity and identified the most related factors contributing to accidents. We utilized an open-source accident dataset, which was preprocessed using techniques like variable selection, missing data elimination, and data balancing through the Synthetic Minority Over-sampling Technique (SMOTE). Chi-square statistical analysis was performed, suggesting that all weather-related variables are more or less associated with the severity of accidents. Visibility and temperature were found to be the most critical factors affecting the severity of road accidents. Hence, appropriate measures such as implementing effective fog dispersal systems, heatwave alerts, or improved road maintenance during extreme temperatures could help reduce accident severity. Secondly, the research evaluated the ability of machine learning models including decision trees, random forests, naive bayes, extreme gradient boost, and neural networks to predict accident likelihood. The models’ performance was gauged using metrics like accuracy, precision, recall, and F1 score. The Random Forest model emerged as the most reliable and accurate model for predicting accidents, with an overall accuracy of 98.53%. The Decision Tree model also showed high overall accuracy (95.33%), indicating its reliability. However, the Naive Bayes model showed the lowest accuracy (63.31%) and was deemed less reliable in this context. It is concluded that machine learning models can be effectively used to predict the likelihood of accidents, with models like Random Forest and Decision Tree proving the most effective. However, the effectiveness of each model may vary depending on the dataset and context, necessitating further testing and validation for real-world implementation. These findings not only provide insight into the factors affecting accident severity but also open a promising avenue in employing machine learning techniques for proactive accident prediction and mitigation. Future studies can aim to refine the models further and potentially integrate them into traffic management systems to enhance road safety

Cape Town road traffic accident analysis: Utilising supervised learning techniques and discussing their effectiveness

[EN] Road traffic accidents (RTA) are a major cause of death and injury around the world. The use of Supervised learning (SL) methods to understand the frequency and injury-severity of RTAs are of utmost importance in designing appropriate interventions. Data on RTAs that occurred in the city of Cape Town during 2015-2017 are used for this study. The data contain the injury-severity (no injury, slight, serious and fatal injury) of the RTAs as well as several accident-related variables. Additional locational and situational variables were added to the dataset. Four training datasets were analysed: the original imbalanced data, data with the minority class over-sampled, data with the majority class under-sampled and data with synthetically created observations. The performance of different SL methods were compared using accuracy, recall, precision and F1 score evaluation metrics and based on the average recall the ANN was selected as the best performing model on the validation data.Du Toit, C.; Salau, S.; Er, S. (2022). Cape Town road traffic accident analysis: Utilising supervised learning techniques and discussing their effectiveness. En 4th International Conference on Advanced Research Methods and Analytics (CARMA 2022). Editorial Universitat Politècnica de València. 57-64. https://doi.org/10.4995/CARMA2022.2022.15041576