650 research outputs found

    Energy Saving Techniques for Phase Change Memory (PCM)

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    In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory (PCM), which has low read latency and power; and nearly zero leakage power. However, the write latency and power of PCM are very high and this, along with limited write endurance of PCM present significant challenges in enabling wide-spread adoption of PCM. To address this, several architecture-level techniques have been proposed. In this report, we review several techniques to manage power consumption of PCM. We also classify these techniques based on their characteristics to provide insights into them. The aim of this work is encourage researchers to propose even better techniques for improving energy efficiency of PCM based main memory.Comment: Survey, phase change RAM (PCRAM

    Gestión de jerarquías de memoria híbridas a nivel de sistema

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    Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

    Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory

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    The gradually widening speed disparity of between CPU and memory has become an overwhelming bottleneck for the development of Chip Multiprocessor (CMP) systems. In addition, increasing penalties caused by frequent on-chip memory accesses have raised critical challenges in delivering high memory access performance with tight power and latency budgets. To overcome the daunting memory wall and energy wall issues, this thesis focuses on proposing a new heterogeneous scratchpad memory architecture which is configured from SRAM, MRAM, and Z-RAM. Based on this architecture, we propose two algorithms, a dynamic programming and a genetic algorithm, to perform data allocation to different memory units, therefore reducing memory access cost in terms of power consumption and latency. Extensive and intensive experiments are performed to show the merits of the heterogeneous scratchpad architecture over the traditional pure memory system and the effectiveness of the proposed algorithms

    Design and Code Optimization for Systems with Next-generation Racetrack Memories

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    With the rise of computationally expensive application domains such as machine learning, genomics, and fluids simulation, the quest for performance and energy-efficient computing has gained unprecedented momentum. The significant increase in computing and memory devices in modern systems has resulted in an unsustainable surge in energy consumption, a substantial portion of which is attributed to the memory system. The scaling of conventional memory technologies and their suitability for the next-generation system is also questionable. This has led to the emergence and rise of nonvolatile memory ( NVM ) technologies. Today, in different development stages, several NVM technologies are competing for their rapid access to the market. Racetrack memory ( RTM ) is one such nonvolatile memory technology that promises SRAM -comparable latency, reduced energy consumption, and unprecedented density compared to other technologies. However, racetrack memory ( RTM ) is sequential in nature, i.e., data in an RTM cell needs to be shifted to an access port before it can be accessed. These shift operations incur performance and energy penalties. An ideal RTM , requiring at most one shift per access, can easily outperform SRAM . However, in the worst-cast shifting scenario, RTM can be an order of magnitude slower than SRAM . This thesis presents an overview of the RTM device physics, its evolution, strengths and challenges, and its application in the memory subsystem. We develop tools that allow the programmability and modeling of RTM -based systems. For shifts minimization, we propose a set of techniques including optimal, near-optimal, and evolutionary algorithms for efficient scalar and instruction placement in RTMs . For array accesses, we explore schedule and layout transformations that eliminate the longer overhead shifts in RTMs . We present an automatic compilation framework that analyzes static control flow programs and transforms the loop traversal order and memory layout to maximize accesses to consecutive RTM locations and minimize shifts. We develop a simulation framework called RTSim that models various RTM parameters and enables accurate architectural level simulation. Finally, to demonstrate the RTM potential in non-Von-Neumann in-memory computing paradigms, we exploit its device attributes to implement logic and arithmetic operations. As a concrete use-case, we implement an entire hyperdimensional computing framework in RTM to accelerate the language recognition problem. Our evaluation shows considerable performance and energy improvements compared to conventional Von-Neumann models and state-of-the-art accelerators

    Yearly update : exascale projections for 2013.

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    Enabling Reliable, Efficient, and Secure Computing for Energy Harvesting Powered IoT Devices

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    Energy harvesting is one of the most promising techniques to power devices for future generation IoT. While energy harvesting does not have longevity, safety, and recharging concerns like traditional batteries, its instability brings a new challenge to the embedded systems: the energy harvested from environment is usually weak and intermittent. With traditional CMOS based technology, whenever the power is off, the computation has to start from the very beginning. Compared with existing CMOS based memory devices, emerging non-volatile memory devices such as PCM and STT-RAM, have the benefits of sustaining the data even when there is no power. By checkpointing the processor's volatile state to non-volatile memory, a program can resume its execution immediately after power comes back on again instead of restarting from the very beginning with checkpointing techniques. However, checkpointing is not sufficient for energy harvesting systems. First, the program execution resumed from the last checkpoint might not execute correctly and causes inconsistency problem to the system. This problem is due to the inconsistency between volatile system state and non-volatile system state during checkpointing. Second, the process of checkpointing consumes a considerable amount of energy and time due to the slow and energy-consuming write operation of non-volatile memory. Finally, connecting to the internet poses many security issues to energy harvesting IoT devices. Traditional data encryption methods are both energy and time consuming which do not fit the resource constrained IoT devices. Therefore, a light-weight encryption method is in urgent need for securing IoT devices. Targeting those three challenges, this dissertation proposes three techniques to enable reliable, efficient, and secure computing in energy harvesting IoT devices. First, a consistency-aware checkpointing technique is proposed to avoid inconsistency errors generated from the inconsistency between volatile state and non-volatile state. Second, checkpoint aware hybrid cache architecture is proposed to guarantee reliable checkpointing while maintaining a low checkpointing overhead from cache. Finally, to ensure the security of energy harvesting IoT devices, an energy-efficient in-memory encryption implementation for protecting the IoT device is proposed which can quickly encrypts the data in non-volatile memory and protect the embedded system physical and on-line attacks

    Computing with Spintronics: Circuits and architectures

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    This thesis makes the following contributions towards the design of computing platforms with spintronic devices. 1) It explores the use of spintronic memories in the design of a domain-specific processor for an emerging class of data-intensive applications, namely recognition, mining and synthesis (RMS). Two different spintronic memory technologies — Domain Wall Memory (DWM) and STT-MRAM — are utilized to realize the different levels in the memory hierarchy of the domain-specific processor, based on their respective access characteristics. Architectural tradeoffs created by the use of spintronic memories are analyzed. The proposed design achieves 1.5X-4X improvements in energy-delay product compared to a CMOS baseline. 2) It describes the first attempt to use DWM in the cache hierarchy of general-purpose processors. DWM promises unparalleled density by packing several bits of data into each bit-cell. TapeCache, the proposed DWM-based cache architecture, utilizes suitable circuit and architectural optimizations to address two key challenges (i) the high energy and latency requirement of write operations and (ii) the need for shift operations to access the data stored in each DWM bit-cell. At the circuit level, DWM bit-cells that are tailored to the distinct design requirements of different levels in the cache hierarchy are proposed. At the architecture level, TapeCache proposes suitable cache organization and management policies to alleviate the performance impact of shift operations required to access data stored in DWM bit-cells. TapeCache achieves more than 7X improvements in both cache area and energy with virtually identical performance compared to an SRAM-based cache hierarchy. 3) It investigates the design of the on-chip memory hierarchy of general-purpose graphics processing units (GPGPUs)—massively parallel processors that are optimized for data-intensive high-throughput workloads—using DWM. STAG, a high density, energy-efficient Spintronic- Tape Architecture for GPGPU cache hierarchies is described. STAG utilizes different DWM bit-cells to realize different memory arrays in the GPGPU cache hierarchy. To address the challenge of high access latencies due to shifts, STAG predicts upcoming cache accesses by leveraging unique characteristics of GPGPU architectures and workloads, and prefetches data that are both likely to be accessed and require large numbers of shift operations. STAG achieves 3.3X energy reduction and 12.1% performance improvement over CMOS SRAM under iso-area conditions. 4) While the potential of spintronic devices for memories is widely recognized, their utility in realizing logic is much less clear. The thesis presents Spintastic, a new paradigm that utilizes Stochastic Computing (SC) to realize spintronic logic. In SC, data is encoded in the form of pseudo-random bitstreams, such that the probability of a \u271\u27 in a bitstream corresponds to the numerical value that it represents. SC can enable compact, low-complexity logic implementations of various arithmetic functions. Spintastic establishes the synergy between stochastic computing and spin-based logic by demonstrating that they mutually alleviate each other\u27s limitations. On the one hand, various building blocks of SC, which incur significant overheads in CMOS implementations, can be efficiently realized by exploiting the physical characteristics of spin devices. On the other hand, the reduced logic complexity and low logic depth of SC circuits alleviates the shortcomings of spintronic logic. Based on this insight, the design of spin-based stochastic arithmetic circuits, bitstream generators, bitstream permuters and stochastic-to-binary converter circuits are presented. Spintastic achieves 7.1X energy reduction over CMOS implementations for a wide range of benchmarks from the image processing, signal processing, and RMS application domains. 5) In order to evaluate the proposed spintronic designs, the thesis describes various device-to-architecture modeling frameworks. Starting with devices models that are calibrated to measurements, the characteristics of spintronic devices are successively abstracted into circuit-level and architectural models, which are incorporated into suitable simulation frameworks. (Abstract shortened by UMI.

    TDO-CIM: Transparent Detection and Offloading for Computation In-memory

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    Computation in-memory is a promising non-von Neumann approach aiming at completely diminishing the data transfer to and from the memory subsystem. Although a lot of architectures have been proposed, compiler support for such architectures is still lagging behind. In this paper, we close this gap by proposing an end-to-end compilation flow for in-memory computing based on the LLVM compiler infrastructure. Starting from sequential code, our approach automatically detects, optimizes, and offloads kernels suitable for in-memory acceleration. We demonstrate our compiler tool-flow on the PolyBench/C benchmark suite and evaluate the benefits of our proposed in-memory architecture simulated in Gem5 by comparing it with a state-of-the-art von Neumann architecture.Comment: Full version of DATE2020 publicatio

    Heap Data Allocation to Scratch-Pad Memory in Embedded Systems

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    This thesis presents the first-ever compile-time method for allocating a portion of a program's dynamic data to scratch-pad memory. A scratch-pad is a fast directly addressed compiler-managed SRAM memory that replaces the hardware-managed cache. It is motivated by its better real-time guarantees vs cache and by its significantly lower overheads in access time, energy consumption, area and overall runtime. Dynamic data refers to all objects allocated at run-time in a program, as opposed to static data objects which are allocated at compile-time. Existing compiler methods for allocating data to scratch-pad are able to place only code, global and stack data (static data) in scratch-pad memory; heap and recursive-function objects(dynamic data) are allocated entirely in DRAM, resulting in poor performance for these dynamic data types. Runtime methods based on software caching can place data in scratch-pad, but because of their high overheads from software address translation, they have not been successful, especially for dynamic data. In this thesis we present a dynamic yet compiler-directed allocation method for dynamic data that for the first time, (i) is able to place a portion of the dynamic data in scratch-pad; (ii) has no software-caching tags; (iii) requires no run-time per-access extra address translation; and (iv) is able to move dynamic data back and forth between scratch-pad and DRAM to better track the program's locality characteristics. With our method, code, global, stack and heap variables can share the same scratch-pad. When compared to placing all dynamic data variables in DRAM and only static data in scratch-pad, our results show that our method reduces the average runtime of our benchmarks by 22.3%, and the average power consumption by 26.7%, for the same size of scratch-pad fixed at 5% of total data size. Significant savings in runtime and energy across a large number of benchmarks were also observed when compared against cache memory organizations, showing our method's success under constrained SRAM sizes when dealing with dynamic data. Lastly, our method is able to minimize the profile dependence issues which plague all similar allocation methods through careful analysis of static and dynamic profile information

    Energy-Aware Data Movement In Non-Volatile Memory Hierarchies

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    While technology scaling enables increased density for memory cells, the intrinsic high leakage power of conventional CMOS technology and the demand for reduced energy consumption inspires the use of emerging technology alternatives such as eDRAM and Non-Volatile Memory (NVM) including STT-MRAM, PCM, and RRAM. The utilization of emerging technology in Last Level Cache (LLC) designs which occupies a signifcant fraction of total die area in Chip Multi Processors (CMPs) introduces new dimensions of vulnerability, energy consumption, and performance delivery. To be specific, a part of this research focuses on eDRAM Bit Upset Vulnerability Factor (BUVF) to assess vulnerable portion of the eDRAM refresh cycle where the critical charge varies depending on the write voltage, storage and bit-line capacitance. This dissertation broaden the study on vulnerability assessment of LLC through investigating the impact of Process Variations (PV) on narrow resistive sensing margins in high-density NVM arrays, including on-chip cache and primary memory. Large-latency and power-hungry Sense Amplifers (SAs) have been adapted to combat PV in the past. Herein, a novel approach is proposed to leverage the PV in NVM arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time. On the other hand, this dissertation investigates a novel technique to prioritize the service to 1) Extensive Read Reused Accessed blocks of the LLC that are silently dropped from higher levels of cache, and 2) the portion of the working set that may exhibit distant re-reference interval in L2. In particular, we develop a lightweight Multi-level Access History Profiler to effciently identify ERRA blocks through aggregating the LLC block addresses tagged with identical Most Signifcant Bits into a single entry. Experimental results indicate that the proposed technique can reduce the L2 read miss ratio by 51.7% on average across PARSEC and SPEC2006 workloads. In addition, this dissertation will broaden and apply advancements in theories of subspace recovery to pioneer computationally-aware in-situ operand reconstruction via the novel Logic In Interconnect (LI2) scheme. LI2 will be developed, validated, and re?ned both theoretically and experimentally to realize a radically different approach to post-Moore\u27s Law computing by leveraging low-rank matrices features offering data reconstruction instead of fetching data from main memory to reduce energy/latency cost per data movement. We propose LI2 enhancement to attain high performance delivery in the post-Moore\u27s Law era through equipping the contemporary micro-architecture design with a customized memory controller which orchestrates the memory request for fetching low-rank matrices to customized Fine Grain Reconfigurable Accelerator (FGRA) for reconstruction while the other memory requests are serviced as before. The goal of LI2 is to conquer the high latency/energy required to traverse main memory arrays in the case of LLC miss, by using in-situ construction of the requested data dealing with low-rank matrices. Thus, LI2 exchanges a high volume of data transfers with a novel lightweight reconstruction method under specific conditions using a cross-layer hardware/algorithm approach
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