5,505 research outputs found

    Practical quantum realization of the ampere from the electron charge

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    One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former definition based on Amp\`ere's force law will allow one to fully benefit from quantum physics to realize the ampere. However, a quantum realization of the ampere from \emph{e}, accurate to within 10−810^{-8} in relative value and fulfilling traceability needs, is still missing despite many efforts have been spent for the development of single-electron tunneling devices. Starting again with Ohm's law, applied here in a quantum circuit combining the quantum Hall resistance and Josephson voltage standards with a superconducting cryogenic amplifier, we report on a practical and universal programmable quantum current generator. We demonstrate that currents generated in the milliampere range are quantized in terms of efJef_\mathrm{J} (fJf_\mathrm{J} is the Josephson frequency) with a measurement uncertainty of 10−810^{-8}. This new quantum current source, able to deliver such accurate currents down to the microampere range, can greatly improve the current measurement traceability, as demonstrated with the calibrations of digital ammeters. Beyond, it opens the way to further developments in metrology and in fundamental physics, such as a quantum multimeter or new accurate comparisons to single electron pumps.Comment: 15 pages, 4 figure

    Towards single-electron metrology

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    We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed in the context of other standards. The operation principles of single electron transistors, turnstiles and pumps are explained and the fundamental limits of these devices are discussed in detail. We describe the various physical mechanisms that influence the device uncertainty and review the analytical and numerical methods needed to calculate the intrinsic uncertainty and to optimise the fabrication and operation parameters. Recent experimental results are evaluated and compared with theoretical predictions. Although there are discrepancies between theory and experiments, the intrinsic uncertainty is already small enough to start preparing for the first SET-based metrological applications.Comment: 39 pages, 14 figures. Review paper to be published in International Journal of Modern Physics

    Single-electron current sources: towards a refined definition of ampere

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    Controlling electrons at the level of elementary charge ee has been demonstrated experimentally already in the 1980's. Ever since, producing an electrical current efef, or its integer multiple, at a drive frequency ff has been in a focus of research for metrological purposes. In this review we first discuss the generic physical phenomena and technical constraints that influence charge transport. We then present the broad variety of proposed realizations. Some of them have already proven experimentally to nearly fulfill the demanding needs, in terms of transfer errors and transfer rate, of quantum metrology of electrical quantities, whereas some others are currently "just" wild ideas, still often potentially competitive if technical constraints can be lifted. We also discuss the important issues of read-out of single-electron events and potential error correction schemes based on them. Finally, we give an account of the status of single-electron current sources in the bigger framework of electric quantum standards and of the future international SI system of units, and briefly discuss the applications and uses of single-electron devices outside the metrological context.Comment: 55 pages, 38 figures; (v2) fixed typos and misformatted references, reworded the section on AC pump

    Nonlinear mechanisms in passive microwave devices

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    Premi extraordinari doctorat curs 2010-2011, àmbit d’Enginyeria de les TICThe telecommunications industry follows a tendency towards smaller devices, higher power and higher frequency, which imply an increase on the complexity of the electronics involved. Moreover, there is a need for extended capabilities like frequency tunable devices, ultra-low losses or high power handling, which make use of advanced materials for these purposes. In addition, increasingly demanding communication standards and regulations push the limits of the acceptable performance degrading indicators. This is the case of nonlinearities, whose effects, like increased Adjacent Channel Power Ratio (ACPR), harmonics, or intermodulation distortion among others, are being included in the performance requirements, as maximum tolerable levels. In this context, proper modeling of the devices at the design stage is of crucial importance in predicting not only the device performance but also the global system indicators and to make sure that the requirements are fulfilled. In accordance with that, this work proposes the necessary steps for circuit models implementation of different passive microwave devices, from the linear and nonlinear measurements to the simulations to validate them. Bulk acoustic wave resonators and transmission lines made of high temperature superconductors, ferroelectrics or regular metals and dielectrics are the subject of this work. Both phenomenological and physical approaches are considered and circuit models are proposed and compared with measurements. The nonlinear observables, being harmonics, intermodulation distortion, and saturation or detuning, are properly related to the material properties that originate them. The obtained models can be used in circuit simulators to predict the performance of these microwave devices under complex modulated signals, or even be used to predict their performance when integrated into more complex systems. A key step to achieve this goal is an accurate characterization of materials and devices, which is faced by making use of advanced measurement techniques. Therefore, considerations on special measurement setups are being made along this thesis.Award-winningPostprint (published version

    New proposed method for traceability dissemination of capacitance measurements

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    Capacitance measurements at the National Institute of Standards (NIS), Egypt, are traceable to the Bureau International des Poids et Mesures (BIPM). It calibrates the main NIS standard capacitors, AH11A. In this paper, traceability of the BIPM capacitance measurements could be used to evaluate a new accurate measurement method through an Ultra-Precision Capacitance Bridge. The new method is carefully described by introducing some necessary equations and a demonstrating chart. Verification of this new method has been realized by comparing its results for the 10 pF and 100 pF capacitance standards with the results obtained by the conventional substitution method at 1 kHz and 1.592 kHz. The relative differences between the two methods are about 0.3 µF/F, which reflect the accuracy of the new measurement method. For higher capacitance ranges, the new measurement method has been applied for the capacitance measurements up to 1 μF at 1 kHz. The relative differences between the two methods are in the range of 5.5 µF/F on the average which proves the acceptable accuracy and the reliability of the new method to be used

    Integrated quantized electronics: a semiconductor quantized voltage source

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    The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their broad range of further applications e.g. in integrated circuits, quantized voltage generation by a semiconductor device has never been obtained. Here we report a semiconductor quantized voltage source generating quantized voltages Vout = f\cdot(h/e). It is based on an integrated quantized circuit of a single electron pump operated at pumping frequency f and a quantum Hall device monolithically integrated in series. The output voltages of several \muV are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrological triangle. Furthermore it represents a universal electrical quantum reference allowing to generate quantized values of the three most relevant electrical units of voltage, current, and resistance based on fundamental constants using a single device.Comment: 15 pages, 3 figure

    Quantum Metrology Triangle Experiments: A Status Review

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    Quantum Metrology Triangle experiments combine three quantum electrical effects (the Josephson effect, the quantum Hall effect and the single-electron transport effect) used in metrology. These experiments allow important fundamental consistency tests on the validity of commonly assumed relations between fundamental constants of nature and the quantum electrical effects. This paper reviews the history, results and the present status and perspectives of Quantum Metrology Triangle experiments. It also reflects on the possible implications of results for the knowledge on fundamental constants and the quantum electrical effects.Comment: 36 pages, 8 figure
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