Towards Integrated Mid-Infrared Gas Sensors.

Optical gas sensors play an increasingly important role in many applications. Sensing techniques based on mid-infrared absorption spectroscopy offer excellent stability, selectivity and sensitivity, for numerous possibilities expected for sensors integrated into mobile and wearable devices. Here we review recent progress towards the miniaturization and integration of optical gas sensors, with a focus on low-cost and low-power consumption devices

On-chip mid-infrared photothermal spectroscopy using suspended silicon-on-insulator microring resonators

Mid-infrared spectroscopic techniques rely on the specific "fingerprint" absorption lines of molecules in the mid-infrared band to detect the presence and concentration of these molecules. Despite being very sensitive and selective, bulky and expensive equipment such as cooled mid-infrared detectors is required for conventional systems. In this paper, we demonstrate a miniature CMOS-compatible Silicon-on-Insulator (SOI) photothermal transducer for mid-infrared spectroscopy which can potentially be made in high volumes and at a low cost. The optical absorption of an analyte in the mid infrared wavelength range (3.25-3.6 mu m) is thermally transduced to an optical transmission change of a microring resonator through the thermo-optic effect in silicon. The photothermal signal is further enhanced by locally removing the silicon substrate beneath the transducer, hereby increasing the effective thermal isolation by a factor of 40. As a proof-of-concept, the absorption spectrum of a polymer that has been locally patterned in the annular region of the resonator was recovered using photothermal spectroscopy. The spectrum is in good agreement with a benchmark Fourier-transform infrared spectroscopy (FTIR) measurement. A normalized noise equivalent absorption coefficient (NNEA) of 7.6 X 10(-6) W/Hz(1/2) is estimated

Proof-of-principle of surface detection with air-guided quantum cascade lasers

We report a proof-of-principle of surface detection with air-guided quantum cascade lasers. Laser ridges were designed to exhibit an evanescent electromagnetic field on their top surface that can interact with material or liquids deposited on the device. We employ photoresist and common solvents to provide a demonstration of the sensor setup. We observed spectral as well as threshold currents changes as a function of the deposited material absorption curve. A simple model, supplemented by 2D numerical finite element method simulations, allows one to explain and correctly predict the experimental results

Mid-IR heterogeneous silicon photonics

In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources

Multispectral mid-infrared light emitting diodes on a GaAs substrate

We have designed, simulated, and experimentally demonstrated four-colour mid-infrared (mid-IR) Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semi-insulating GaAs substrate. In order to finely control the peak wavelength of the emitted mid-IR light, quantum well (QW) structures based on AlInSb/InSb/AlInSb are employed. The completed device structure consists of three p-QW-n diodes with different well widths stacked on top of one bulk AlInSb p-i-n diode. The epitaxial layers comprising the device are designed in such a way that one contact layer is shared between two LEDs. The design of the heterostructure realising the multispectral LEDs was aided by numerical modelling, and good agreement is observed between the simulated and experimental results. Electro-Luminescence measurements, carried out at room temperature, confirm that the emission of each LED peaks at a different wavelength. Peak wavelengths of 3.40 μm, 3.50 μm, 3.95 μm, and 4.18 μm are observed in the bulk, 2 nm, 4 nm, and 6 nm quantum well LEDs, respectively. Under zero bias, Fourier Transform Infrared photo-response measurements indicate that these fabricated diodes can also be operated as mid-IR photodetectors with an extended cut-off wavelength up to 4.6 μm