36 research outputs found
Power Management for Deep Submicron Microprocessors
As VLSI technology scales, the enhanced performance of smaller transistors comes at the expense of increased power consumption. In addition to the dynamic power consumed by the circuits there is a tremendous increase in the leakage power consumption which is further exacerbated by the increasing operating temperatures. The total power consumption of modern processors is distributed between the processor core, memory and interconnects. In this research two novel power management techniques are presented targeting the functional units and the global interconnects.
First, since most leakage control schemes for processor functional units are based on circuit level techniques, such schemes inherently lack information about the operational profile of higher-level components of the system. This is a barrier to the pivotal task of predicting standby time. Without this prediction, it is extremely difficult to assess the value of any leakage control scheme. Consequently, a methodology that can predict the standby time is highly beneficial in bridging the gap between the information available at the application level and the circuit implementations.
In this work, a novel Dynamic Sleep Signal Generator (DSSG) is presented. It utilizes the usage traces extracted from cycle accurate simulations of benchmark programs to predict the long standby periods associated with the various functional units. The DSSG bases its decisions on the current and previous standby state of the functional units to accurately predict the length of the next standby period. The DSSG presents an alternative to Static Sleep Signal Generation (SSSG) based on static counters that trigger the generation of the sleep signal when the functional units idle for a prespecified number of cycles.
The test results of the DSSG are obtained by the use of a modified RISC superscalar processor, implemented by SimpleScalar, the most widely accepted open source vehicle for architectural analysis. In addition, the results are further verified by a Simultaneous Multithreading simulator implemented by SMTSIM. Leakage saving results shows an increase of up to 146% in leakage savings using the DSSG versus the SSSG, with an accuracy of 60-80% for predicting long standby periods.
Second, chip designers in their effort to achieve timing closure, have focused on achieving the lowest possible interconnect delay through buffer insertion and routing techniques. This approach, though, taxes the power budget of modern ICs, especially those intended for wireless applications. Also, in order to achieve more functionality, die sizes are constantly increasing. This trend is leading to an increase in the average global interconnect length which, in turn, requires more buffers to achieve timing closure. Unconstrained buffering is bound to adversely affect the overall chip performance, if the power consumption is added as a major performance metric. In fact, the number of global interconnect buffers is expected to reach hundreds of thousands to achieve an appropriate timing closure.
To mitigate the impact of the power consumed by the interconnect buffers, a power-efficient multi-pin routing technique is proposed in this research. The problem is based on a graph representation of the routing possibilities, including buffer insertion and identifying the least power path between the interconnect source and set of sinks.
The novel multi-pin routing technique is tested by applying it to the ISPD and IBM benchmarks to verify the accuracy, complexity, and solution quality. Results obtained indicate that an average power savings as high as 32% for the 130-nm technology is achieved with no impact on the maximum chip frequency
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Variation-Tolerant and Voltage-Scalable Integrated Circuits Design
Ultra-low-voltage (ULV) operation where the supply voltage of the digital computing hardware is scaled down to the level near or below transistor threshold voltage (e.g. 300-500mV) is a key technique to achieve high computing energy efficiency. It has enabled many new exciting applications in the field of Internet of Things (IoT) devices and energy-constrained applications such as medical implants, environment sensors, and micro-robots. Ultra-low-voltage (ULV) operation is also commonly used with the emerging architectures that are often non Von-Neumann style to empower energy-efficient cognitive computing.
One the biggest challenge in realizing ULV design is the large circuit delay variability. To guarantee functionality in the worst-case process, voltage, and temperature (PVT) condition, the traditional safety margin approach requires operating at a slower clock frequency or higher supply voltage which significantly limits the achievable energy efficiency of the hardware. To fully claim the energy efficiency of ULV, the large circuit delay variation needs to be adaptively handled. However, the existing adaptive techniques that are optimized for nominal supply voltage operation and traditional Von-Neumann architectures become inefficient for ULV designs and emerging architectures.
This thesis presents adaptive techniques based on timing error detection and correction (EDAC) that are more suitable for the energy-constrained ULV designs and the emerging architectures. The proposed techniques are demonstrated in three test chips: (1) R-Processor: A 0.4V resilient processor with a voltage-scalable and low-overhead in-situ EDAC technique. It achieves 38% energy efficiency improvement or 2.3X throughput improvement as compared to the traditional safety margin approach. (2) A 450mV timing-margin-free waveform sorter for brain computer interface (BCI) microsystem. It achieves 49.3% higher energy efficiency and 35.6% higher throughput than the traditional safety margin approach. (3) Ultra-low-power and robust power-management system which consists of a microprocessor employing ULV EDAC, 63-ratio integrated switched-capacitor DC-DC converter, and a fully-digital error based regulation controller.
In this thesis, we also explore circuits for emerging techniques. The first is temperature sensors for dynamic-thermal-management (DTM). The modern high-performance microprocessors suffer from ever-increasing power densities which has led to reliability concerns and increased cooling costs from excessive heat. In order to monitor and manage the thermal behavior, DTM techniques embed multiple temperature sensors and use its information. The size, accuracy, and voltage-scalability of the sensor are critical for the performance of DTM. Therefore, we propose a temperature sensor that directly senses transistor threshold voltage and the test chip demonstrates 9X smaller area, 3X higher accuracy, and 200mV lower voltage scalability (down to 400mV) than the previous state-of-art.
Another area of exploration is interconnect design for ultra-dynamic-voltage-scaling (UDVS) systems. UDVS has been proposed for applications that require both high performance and high energy efficiency. UDVS can provide peak performance with nominal supply voltage when work load is high. When work load is moderate or low, UDVS systems can switch to ULV operation for higher energy efficiency. One of the critical challenges for developing UDVS systems is the inflexibility in various circuit fabrics that are often optimized for a single supply voltage. One critical example is conventional repeater based long interconnects which suffers from non-optimal performance and energy efficiency in UDVS systems. Therefore, in this thesis, we propose a reconfigurable interconnect design based on regenerators and demonstrate near optimal performance and energy efficiency across the supply voltage of 0.3V and 1V
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Ultra-Low Leakage, Energy-Efficient Digital Integrated Circuit and System Design
The advances of the complementary metal-oxide-semiconductor (CMOS) technology manufacturing and design over the years have enabled a diverse range of applications across the power consumption, performance, and area (PPA) spectra. Many of the recent and prospective applications rely on the availability of energy-autonomous, miniaturized systems, i.e., ultra-low power (ULP) VLSI systems, which are generally characterized by extreme resource limitations. Some examples of applications are wireless sensing platforms, body-area sensor networks (BASN), biomedical and implantable devices, wearables, hearables, and monitors. Within the context of such applications, the key requirements are long lifetime and miniaturized size (sub-/millimeter-scale). In order to enable both requirements, energy-efficiency is the key metric. It allows for extended battery lifetime and operation with the energy that can be harvested from the environment, and it limits the size (volume) of the energy sources utilized to power these systems.
Ultra-low voltage (ULV) operation is a key technique in which the VDD of circuits is reduced from nominal to near or below the threshold voltage of the transistor. It is a powerful knob that has been largely exploited by designers in order to achieve ultra-low power consumption and high energy-efficiency in CMOS. Existing ULP VLSI systems typically operate at a lower supply voltage thereby reducing their energy consumption by one to two orders of magnitude in order to enable the aforementioned applications.
While supply voltage scaling is a promising measure for achieving low power and reducing energy consumption, it brings up several challenges. One critical issue is the leakage energy dissipated by the devices, which is magnified in portion to the total energy consumption at ULV. The reason is that, as VDD scales from nominal to near-threshold and sub-threshold, transistors become increasingly slower and they accumulate more leakage (i.e., static) power over longer cycle times. This energy waste accounts for a significant portion of the system's total energy consumption, offsets the gains provided by voltage scaling, defines the minimum energy per operation, and poses a practical limit for the system's energy-efficiency.
This thesis presents selected research works on ultra-low leakage, energy-efficient digital integrated circuit design. More specifically, it describes novel and key techniques for minimizing the energy waste of idle/underutilized and always-on hardware. The main goal of such techniques is to push the envelope of energy-efficiency in energy-autonomous, miniaturized VLSI systems. Such techniques are applied to key building blocks of emerging mobile and embedded computing devices resulting in state-of-the-art energy-efficiencies
Doctor of Philosophy
dissertationCommunication surpasses computation as the power and performance bottleneck in forthcoming exascale processors. Scaling has made transistors cheap, but on-chip wires have grown more expensive, both in terms of latency as well as energy. Therefore, the need for low energy, high performance interconnects is highly pronounced, especially for long distance communication. In this work, we examine two aspects of the global signaling problem. The first part of the thesis focuses on a high bandwidth asynchronous signaling protocol for long distance communication. Asynchrony among intellectual property (IP) cores on a chip has become necessary in a System on Chip (SoC) environment. Traditional asynchronous handshaking protocol suffers from loss of throughput due to the added latency of sending the acknowledge signal back to the sender. We demonstrate a method that supports end-to-end communication across links with arbitrarily large latency, without limiting the bandwidth, so long as line variation can be reliably controlled. We also evaluate the energy and latency improvements as a result of the design choices made available by this protocol. The use of transmission lines as a physical interconnect medium shows promise for deep submicron technologies. In our evaluations, we notice a lower energy footprint, as well as vastly reduced wire latency for transmission line interconnects. We approach this problem from two sides. Using field solvers, we investigate the physical design choices to determine the optimal way to implement these lines for a given back-end-of-line (BEOL) stack. We also approach the problem from a system designer's viewpoint, looking at ways to optimize the lines for different performance targets. This work analyzes the advantages and pitfalls of implementing asynchronous channel protocols for communication over long distances. Finally, the innovations resulting from this work are applied to a network-on-chip design example and the resulting power-performance benefits are reported
Design of Variation-Tolerant Circuits for Nanometer CMOS Technology: Circuits and Architecture Co-Design
Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime.
To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages. The derived models are simple, scalable, bias dependent and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit/architecture optimization as well as technology prediction (especially in low-power and low-voltage operation). The derived models are verified using Monte Carlo SPICE simulations using industrial 90nm technology.
Random variations in nanometer technologies are considered one of the largest design considerations. This is especially true for SRAM, due to the large variations in bitcell characteristics. Typically, SRAM bitcells have the smallest device sizes on a chip. Therefore, they show the largest sensitivity to different sources of variations. With the drastic increase in memory densities, lower supply voltages and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. In this research, we present a methodology for statistical simulation of SRAM read access yield, which is tightly related to SRAM performance and power consumption. The proposed flow accounts for the impact of bitcell read current variation, sense amplifier offset distribution, timing window variation and leakage variation on functional yield. The methodology overcomes the pessimism existing in conventional worst-case design techniques that are used in SRAM design. The proposed statistical yield estimation methodology allows early yield prediction in the design cycle, which can be used to trade off performance and power requirements for SRAM. The methodology is verified using measured silicon yield data from a 1Mb memory fabricated in an industrial 45nm technology.
Embedded SRAM dominates modern SoCs and there is a strong demand for SRAM with lower power consumption while achieving high performance and high density. However, in the presence of large process variations, SRAMs are expected to consume larger power to ensure correct read operation and meet yield targets. We propose a new architecture that significantly reduces array switching power for SRAM. The proposed architecture combines built-in self-test (BIST) and digitally controlled delay elements to reduce the wordline pulse width for memories while ensuring correct read operation; hence, reducing switching power. A new statistical simulation flow was developed to evaluate the power savings for the proposed architecture. Monte Carlo simulations using a 1Mb SRAM macro from an industrial 45nm technology was used to examine the power reduction achieved by the system. The proposed architecture can reduce the array switching power significantly and shows large power saving - especially as the chip level memory density increases. For a 48Mb memory density, a 27% reduction in array switching power can be achieved for a read access yield target of 95%. In addition, the proposed system can provide larger power saving as process variations increase, which makes it a very attractive solution for 45nm and below technologies.
In addition to its impact on bitcell read current, the increase of local variations in nanometer technologies strongly affect SRAM cell stability. In this research, we propose a novel single supply voltage read assist technique to improve SRAM static noise margin (SNM). The proposed technique allows precharging different parts of the bitlines to VDD and GND and uses charge sharing to precisely control the bitline voltage, which improves the bitcell stability. In addition to improving SNM, the proposed technique also reduces memory access time. Moreover, it only requires one supply voltage, hence, eliminates the need of large area voltage shifters. The proposed technique has been implemented in the design of a 512kb memory fabricated in 45nm technology. Results show improvements in SNM and read operation window which confirms the effectiveness and robustness of this technique
Multi-Threshold Low Power-Delay Product Memory and Datapath Components Utilizing Advanced FinFET Technology Emphasizing the Reliability and Robustness
Indiana University-Purdue University Indianapolis (IUPUI)In this thesis, we investigated the 7 nm FinFET technology for its delay-power product performance. In our study, we explored the ASAP7 library from Arizona State University, developed in collaboration with ARM Holdings. The FinFET technology was chosen since it has a subthreshold slope of 60mV/decade that enables cells to function at 0.7V supply voltage at the nominal corner. An emphasis was focused on characterizing the Non-Ideal effects, delay variation, and power for the FinFET device. An exhaustive analysis of the INVx1 delay variation for different operating conditions was also included, to assess the robustness.
The 7nm FinFET device was then employed into 6T SRAM cells and 16 function ALU. The SRAM cells were approached with advanced multi-corner stability evaluation. The system-level architecture of the ALU has demonstrated an ultra-low power system operating at 1 GHz clock frequency
Bascules à impulsion robustes en technologie 28nm FDSOI pour circuits numériques basse consommation à très large gamme de tension d'alimentation
The explosion market of the mobile application and the paradigm of the Internet of Things lead to a huge demand for energy-efficient systems. To overcome the limit of Moore's law due to bulk technology, a new transistor technology has appeared recently in industrial process: the fully-depleted silicon on insulator, or FDSOI.In modern ASIC designs, a large portion of the total power consumption is due to the leaves of the clock tree: the flip-flops. Therefore, the appropriate flip-flop architecture is a major choice to reach the speed and energy constraints of mobile and ultra-low power applications. After a thorough overview of the literature, the explicit pulse-triggered flip-flop topology is pointed out as a very interesting flip-flop architecture for high-speed and low-power systems. However, it is today only used in high-performances circuits mainly because of its poor robustness at ultra-low voltage.In this work, explicit pulse-triggered flip-flops architecture design is developed and studied in order to improve their robustness and their energy-efficiency. A large comparison of resettable and scannable latch architecture is performed in the energy-delay domain by modifying the sizing of the transistors, both at nominal and ultra-low voltage. Then, it is shown that the back biasing technique allowed by the FDSOI technology provides better energy and delay performances than the sizing methodology. As the pulse generator is the main cause of functional failure, we proposed a new architecture which provides both a good robustness at ultra-low voltage and an energy efficiency. A selected topology of explicit pulse-triggered flip-flop was implemented in a 16x32b register file which exhibits better speed, energy consumption and area performances than a version with master-slave flip-flops, mainly thanks to the sharing of the pulse generator over several latches.Avec l'explosion du marché des applications portables et le paradigme de l'Internet des objets, la demande pour les circuits à très haute efficacité énergétique ne cesse de croître. Afin de repousser les limites de la loi de Moore, une nouvelle technologie est apparue très récemment dans les procédés industriels afin de remplacer la technologie en substrat massif ; elle est nommée fully-depleted silicon on insulator ou FDSOI. Dans les circuits numériques synchrones modernes, une grande portion de la consommation totale du circuit provient de l'arbre d'horloge, et en particulier son extrémité : les bascules. Dès lors, l'architecture adéquate de bascules est un choix crucial pour atteindre les contraintes de vitesse et d'énergie des applications basse-consommation. Après un large aperçu de l'état de l'art, les bascules à impulsion explicite sont reconnues les plus prometteuses pour les systèmes demandant une haute performance et une basse consommation. Cependant, cette architecture est pour l'instant fortement utilisée dans les circuits à haute performance et pratiquement absente des circuits à basse tension d'alimentation, principalement à cause de sa faible robustesse face aux variations.Dans ce travail, la conception d'architecture de bascule à impulsion explicite est étudiée dans le but d'améliorer la robustesse et l'efficacité énergétique. Un large panel d'architectures de bascule, avec les fonctions reset et scan, a été comparé dans le domaine énergie-délais, à haute et basse tension d'alimentation, grâce à une méthodologie de dimensionnement des transistors. Il a été montré que la technique dite de « back bias », l'un des principaux avantages de la technologie FDSOI, permettait des meilleures performances en énergie et délais que la méthodologie de dimensionnement. Ensuite, comme le générateur d'impulsion est la principale raison de dysfonctionnement, nous avons proposé une nouvelle architecture qui permet un très bon compromis entre robustesse à faible tension et consommation énergétique. Une topologie de bascule à impulsion explicite a été choisie pour être implémentée dans un banc de registres et, comparé aux bascules maître-esclave, elle présente une plus grande vitesse, une plus faible consommation énergétique et une plus petite surface
SWIFT: A Low-Power Network-On-Chip Implementing the Token Flow Control Router Architecture With Swing-Reduced Interconnects
A 64-bit, 8 × 8 mesh network-on-chip (NoC) is presented that uses both new architectural and circuit design techniques to improve on-chip network energy-efficiency, latency, and throughput. First, we propose token flow control, which enables bypassing of flit buffering in routers, thereby reducing buffer size and their power consumption. We also incorporate reduced-swing signaling in on-chip links and crossbars to minimize datapath interconnect energy. The 64-node NoC is experimentally validated with a 2 × 2 test chip in 90 nm, 1.2 V CMOS that incorporates traffic generators to emulate the traffic of the full network. Compared with a fully synthesized baseline 8 × 8 NoC architecture designed to meet the same peak throughput, the fabricated prototype reduces network latency by 20% under uniform random traffic, when both networks are run at their maximum operating frequencies. When operated at the same frequencies, the SWIFT NoC reduces network power by 38% and 25% at saturation and low loads, respectively
Cross-Layer Optimization for Power-Efficient and Robust Digital Circuits and Systems
With the increasing digital services demand, performance and power-efficiency
become vital requirements for digital circuits and systems. However, the
enabling CMOS technology scaling has been facing significant challenges of
device uncertainties, such as process, voltage, and temperature variations. To
ensure system reliability, worst-case corner assumptions are usually made in
each design level. However, the over-pessimistic worst-case margin leads to
unnecessary power waste and performance loss as high as 2.2x. Since
optimizations are traditionally confined to each specific level, those safe
margins can hardly be properly exploited.
To tackle the challenge, it is therefore advised in this Ph.D. thesis to
perform a cross-layer optimization for digital signal processing circuits and
systems, to achieve a global balance of power consumption and output quality.
To conclude, the traditional over-pessimistic worst-case approach leads to
huge power waste. In contrast, the adaptive voltage scaling approach saves
power (25% for the CORDIC application) by providing a just-needed supply
voltage. The power saving is maximized (46% for CORDIC) when a more aggressive
voltage over-scaling scheme is applied. These sparsely occurred circuit errors
produced by aggressive voltage over-scaling are mitigated by higher level error
resilient designs. For functions like FFT and CORDIC, smart error mitigation
schemes were proposed to enhance reliability (soft-errors and timing-errors,
respectively). Applications like Massive MIMO systems are robust against lower
level errors, thanks to the intrinsically redundant antennas. This property
makes it applicable to embrace digital hardware that trades quality for power
savings.Comment: 190 page