Threshold plasticity of hybrid Si-VO2 microring resonators

We theoretically simulate the threshold plasticity of a high-Q-factor silicon-on-insulator microring resonator integrated with VO 2 . The proposed structure can perform excitatory and inhibitory learning by tuning the initial working condition

Towards Oxide Electronics:a Roadmap

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics

The design and analysis of novel integrated phase-change photonic memory and computing devices

The current massive growth in data generation and communication challenges traditional computing and storage paradigms. The integrated silicon photonic platform may alleviate the physical limitations resulting from the use of electrical interconnects and the conventional von Neuman computing architecture, due to its intrinsic energy and bandwidth advantages. This work focuses on the development of the phase-change all-photonic memory (PPCM), a device potentially enabling the transition from the electrical to the optical domain by providing the (previously unavailable) non-volatile all-photonic storage functionality. PPCM devices allow for all-optical encoding of the information on the crystal fraction of a waveguide-implemented phase-change material layer, here Ge2Sb2Te5, which in turn modulates the transmitted signal amplitude. This thesis reports novel developments of the numerical methods necessary to emulate the physics of PPCM device operation and performance characteristics, illustrating solutions enabling the realization of a simulation framework modelling the inherently three-dimensional and self-influencing optical, thermal and phase-switching behaviour of PPCM devices. This thesis also depicts an innovative, fast and cost-effective method to characterise the key optical properties of phase-change materials (upon which the performance of PPCM devices depend), exploiting the reflection pattern of a purposely built layer stack, combined with a smart fit algorithm adapting potential solutions drawn from the scientific literature. The simulation framework developed in the thesis is used to analyse reported PPCM experimental results. Numerous sources of uncertainty are underlined, whose systematic analysis reduced to the peculiar non-linear optical properties of Ge2Sb2Te5. Yet, the data fit process validates both the simulation tool and the remaining physical assumptions, as the model captures the key aspects of the PPCM at high optical intensity, and reliably and accurately predicts its behaviour at low intensity, enabling to investigate its underpinning physical mechanisms. Finally, a novel PPCM memory architecture, exploiting the interaction of a much-reduced Ge2Sb2Te5 volume with a plasmonic resonant nanoantenna, is proposed and numerically investigated. The architecture concept is described and the memory functionality is demonstrated, underlining its potential energy and speed improvement on the conventional device by up to two orders of magnitude.Engineering and Physical Sciences Research Council (EPSRC