75,988 research outputs found
Comparison of coherent and weakly incoherent transport models for the interlayer magnetoresistance of layered Fermi liquids
The interlayer magnetoresistance of layered metals in a tilted magnetic field
is calculated for two distinct models for the interlayer transport. The first
model involves coherent interlayer transport and makes use of results of
semi-classical or Bloch-Boltzmann transport theory. The second model involves
weakly incoherent interlayer transport where the electron is scattered many
times within a layer before tunneling into the next layer. The results are
relevant to the interpretation of experiments on angular-dependent
magnetoresistance oscillations (AMRO) in quasi-one- and quasi-two-dimensional
metals. We find that the dependence of the magnetoresistance on the direction
of the magnetic field is identical for both models except when the field is
almost parallel to the layers. An important implication of this result is that
a three-dimensional Fermi surface is not necessary for the observation of the
Yamaji and Danner oscillations seen in quasi-two- and quasi-one-dimensional
metals, respectively. A universal expression is given for the dependence of the
resistance at AMRO maxima and minima on the magnetic field and scattering time
(and thus the temperature). We point out three distinctive features of coherent
interlayer transport: (i) a beat frequency in the magnetic oscillations of
quasi-two-dimensional systems, (ii) a peak in the angular-dependent
magnetoresistance when the field is sufficiently large and parallel to the
layers, and (iii) a crossover from a linear to a quadratic field dependence for
the magnetoresistance when the field is parallel to the layers. Properties (i)
and (ii) are compared with published experimental data for a range of
quasi-two-dimensional organic metals and for Sr2RuO4.Comment: 21 pages, RevTeX + epsf, 4 figures. Published version. Subsection
added. References update
Multiperiodic magnetic structures in Hubbard superlattices
We consider fermions in one-dimensional superlattices (SL's), modeled by
site-dependent Hubbard-U couplings arranged in a repeated pattern of repulsive
(i.e., U>0) and free (U=0) sites. Density Matrix Renormalization Group (DMRG)
diagonalization of finite systems is used to calculate the local moment and the
magnetic structure factor in the ground state. We have found four regimes for
magnetic behavior: uniform local moments forming a spin-density wave (SDW),
`floppy' local moments with short-ranged correlations, local moments on
repulsive sites forming long-period SDW's superimposed with short-ranged
correlations, and local moments on repulsive sites solely with long-period
SDW's; the boundaries between these regimes depend on the range of electronic
densities, rho, and on the SL aspect ratio. Above a critical electronic
density, rho_{uparrow downarrow}, the SDW period oscillates both with rho and
with the spacer thickness. The former oscillation allows one to reproduce all
SDW wave vectors within a small range of electronic densities, unlike the
homogeneous system. The latter oscillation is related to the exchange
oscillation observed in magnetic multilayers. A crossover between regimes of
`thin' to `thick' layers has also been observed.Comment: 9 two-column pages, 10 figure
Quantum Hall Effect induced by electron-electron interaction in disordered GaAs layers with 3D spectrum
It is shown that the observed Quantum Hall Effect in epitaxial layers of
heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path
of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional
single-particle spectrum is induced by the electron-electron interaction. The
Hall resistance R_xy of the thinnest sample reveals a wide plateau at small
activation energy E_a=0.4 K found in the temperature dependence of the
transverse resistance R_xx. The different minima in the transverse conductance
G_xx of the different samples show a universal temperature dependence
(logarithmic in a large range of rescaled temperatures T/T_0) which is
reminiscent of electron-electron-interaction effects in coherent diffusive
transport.Comment: 6 pages, 3 figures, 1 tabl
Aspects of Defect Topology in Smectic Liquid Crystals
We study the topology of smectic defects in two and three dimensions. We give
a topological classification of smectic point defects and disclination lines in
three dimensions. In addition we describe the combination rules for smectic
point defects in two and three dimensions, showing how the broken translational
symmetry of the smectic confers a path dependence on the result of defect
addition.Comment: 19 pages, 13 figure
Friedel oscillations responsible for stacking fault of adatoms: The case of Mg(0001) and Be(0001)
We perform a first-principles study of Mg adatom and adislands on the
Mg(0001) surface, and Be adatom on Be(0001), to obtain further insights into
the previously reported energetic preference of the fcc faulty stacking of Mg
monomers on Mg(0001). We first provide a viewpoint on how Friedel oscillations
influence ionic relaxation on these surfaces. Our three-dimensional
charge-density analysis demonstrates that Friedel oscillations have maxima
which are more spatially localized than what one-dimensional average density or
two-dimensional cross sectional plots could possibly inform: The well-known
charge-density enhancement around the topmost surface layer of Mg(0001) is
strongly localized at its fcc hollow sites. The charge accumulation at this
site explains the energetically preferred stacking fault of the Mg monomer,
dimer and trimer. Yet, larger islands prefer the normal hcp stacking.
Surprisingly, the mechanism by which the fcc site becomes energetically more
favorable is not that of enhancing the surface-adatom bonds but rather those
between surface atoms. To confirm our conclusions, we analyze the stacking of
Be adatom on Be(0001) - a surface also largely influenced by Friedel
oscillations. We find, in fact, a much stronger effect: The charge enhancement
at the fcc site is even larger and, consequently, the stacking-fault energy
favoring the fcc site is quite large, 44 meV.Comment: Submitted to Physical Review
Topological correction of hypertextured implicit surfaces for ray casting
Hypertextures are a useful modelling tool in that they
can add three-dimensional detail to the surface of otherwise
smooth objects. Hypertextures can be rendered as implicit
surfaces, resulting in objects with a complex but well
defined boundary. However, representing a hypertexture as
an implicit surface often results in many small parts being
detached from the main surface, turning an object into a
disconnected set. Depending on the context, this can detract
from the realism in a scene where one usually does not
expect a solid object to have clouds of smaller objects floating around it. We present a topology correction technique, integrated in a ray casting algorithm for hypertextured implicit surfaces, that detects and removes all the surface components that have become disconnected from the main surface. Our method works with implicit surfaces that are C2 continuous and uses Morse theory to find the critical points of the surface. The method follows the separatrix lines joining the critical points to isolate disconnected components
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