Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 mn MOSFETs. The simulations have been performed using a three-dimensional (3-D) implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantization but also the lateral confinement effects related to current filamentation in the “valleys” of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D 'atomistic' simulation study

A three-dimensional (3-D) 'atomistic' simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFETs is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. The effects of various MOSFET design parameters, including the channel length and width, oxide thickness and channel doping, on the threshold voltage lowering and fluctuations are studied using typical samples of 200 atomistically different MOSFETs. The atomistic results for the threshold voltage fluctuations were compared with two analytical models based on dopant number fluctuations. Although the analytical models predict the general trends in the threshold voltage fluctuations, they fail to describe quantitatively the magnitude of the fluctuations. The distribution of the atomistically calculated threshold voltage and its correlation with the number of dopants in the channel of the MOSFETs was analyzed based on a sample of 2500 microscopically different devices. The detailed analysis shows that the threshold voltage fluctuations are determined not only by the fluctuation in the dopant number, but also in the dopant positio

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed

A Study on SPICE Modeling of Non-Resonant Plasmonic Terahertz Detector

Department Of Electrical EngineeringThe terahertz (sub-millimeter wave) is the frequency resource, ranging from 100 GHz ~ 10 THz band, located in the middle region of the infrared and millimeter waves in the electromagnetic spectrum. Terahertz waves has unique physical characteristics, which is transparency of radio waves and straightness of light waves, simultaneously. The terahertz wave is applied to the basic science, such as device, spectroscopy, and imaging technology. And also adjust in the applied science, such as biomedical engineering, security, environment, information and communication. Which importance already verified. In the new shape of future market is expected to be formed broadly. For this application, operating in the THz frequency detecting device essential. Recently, Current elements operating in terahertz are present, such as compound semiconductor (???-???HBT, HEMT). But, there are disadvantage to use as a high price. Therefore, research have been made of silicon based THz detector in many research groups. Silicon-based nano-technology utilizes a plasma wave transistor technology. Which is using the space-time change of the channel charge density. That causes plasma wave oscillation in the MOSFET (Metal oxide semiconductor field effect transistor) channel and this effect available MOSET operating terahertz regime beyond MOSFET cut-off frequency. So, PWT (plasma wave transistor) is available terahertz detection and oscillation. For integrated possible post processing circuit development in these of terahertz applications system, silicon based PWT compact model is essential thing. For this compact model for spice simulation beyond cut-off frequency, we consider charge time variance model which is NQS (non-quasi-static) model, not quasi-static model. For NQS model two kinds of model exist, first is RC ladder model. That is seral connect MOSFET get rid of parasitic elements. And these complex circuit making the equivalent circuit model, it called New Elmore model. For post processing circuit simulation, fast simulation speed is essential, RC ladder model has a disadvantage (for simulating each segment). In this thesis we using New Elmore model based on Non-resonant plasmonic THz detector modeling, And verified physical validity of our NQS model using the our TCAD model based on Quasi-plasma 2DEG. And we propose fast and accurate compact modelingope

A Study on SPICE Modeling of Non-Resonant Plasmonic Terahertz Detector

Department Of Electrical EngineeringThe terahertz (sub-millimeter wave) is the frequency resource, ranging from 100 GHz ~ 10 THz band, located in the middle region of the infrared and millimeter waves in the electromagnetic spectrum. Terahertz waves has unique physical characteristics, which is transparency of radio waves and straightness of light waves, simultaneously. The terahertz wave is applied to the basic science, such as device, spectroscopy, and imaging technology. And also adjust in the applied science, such as biomedical engineering, security, environment, information and communication. Which importance already verified. In the new shape of future market is expected to be formed broadly. For this application, operating in the THz frequency detecting device essential. Recently, Current elements operating in terahertz are present, such as compound semiconductor (???-???HBT, HEMT). But, there are disadvantage to use as a high price. Therefore, research have been made of silicon based THz detector in many research groups. Silicon-based nano-technology utilizes a plasma wave transistor technology. Which is using the space-time change of the channel charge density. That causes plasma wave oscillation in the MOSFET (Metal oxide semiconductor field effect transistor) channel and this effect available MOSET operating terahertz regime beyond MOSFET cut-off frequency. So, PWT (plasma wave transistor) is available terahertz detection and oscillation. For integrated possible post processing circuit development in these of terahertz applications system, silicon based PWT compact model is essential thing. For this compact model for spice simulation beyond cut-off frequency, we consider charge time variance model which is NQS (non-quasi-static) model, not quasi-static model. For NQS model two kinds of model exist, first is RC ladder model. That is seral connect MOSFET get rid of parasitic elements. And these complex circuit making the equivalent circuit model, it called New Elmore model. For post processing circuit simulation, fast simulation speed is essential, RC ladder model has a disadvantage (for simulating each segment). In this thesis we using New Elmore model based on Non-resonant plasmonic THz detector modeling, And verified physical validity of our NQS model using the our TCAD model based on Quasi-plasma 2DEG. And we propose fast and accurate compact modelingope

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

International audienc

Compact modeling of the rf and noise behavior of multiple-gate mosfets

La reducción de la tecnología MOSFET planar ha sido la opción tecnológica dominante en las últimas décadas. Sin embargo, hemos llegado a un punto en el que los materiales y problemas en los dispositivos surgen, abriendo la puerta para estructuras alternativas de los dispositivos. Entre estas estructuras se encuentran los dispositivos DG, SGT y Triple-Gate. Estas tres estructuras están estudiadas en esta tesis, en el contexto de rducir las dimensiones de los dispositivos a tamaños tales que los mecanismos cuánticos y efectos de calan coro deben tenerse n cuenta. Estos efectos vienen con una seria de desafíos desde el pun to de vista de modelación, unos de los más grandes siendo el tiempo y los recursos comprometidos para ejecutar las simulaciones. para resolver este problema, esta tesis propone modelos comlets analíticos y compactos para cada una de las geometrías, validos desde DC hasta el modo de operación en Rf para los nodos tecnológicos futuros. Dichos modelos se han extendido para analizar el ruido de alta frecuencia en estos diapositivos

Time-domain simulation of the full hydrodynamic model

A simple upwind discretization of the highly coupled non-linear differential equations which define the hydrodynamic model for semiconductors is given in full detail. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of opto- and microelectronics. A silicon $n^+ - n - n^+$ - structure is simulated, using the energy-balance model and the full hydrodynamic model. Results for stationary cases are then compared, and it is pointed out where the energy-balance model, which is implemented in most of today's commercial semiconductor device simulators, fails to describe accurately the electron dynamics. Additionally, a GaAs $n^+ - n - n^+$-structure is simulated in time-domain in order to illustrate the importance of inertia effects at high frequencies in modern submicron devices.Comment: 15 pages, 8 figures, prepared using jnmauth.cl