Interconnect Planning for Physical Design of 3D Integrated Circuits

Vertical stacking—based on modern manufacturing and integration technologies—of multiple 2D chips enables three-dimensional integrated circuits (3D ICs). This exploitation of the third dimension is generally accepted for aiming at higher packing densities, heterogeneous integration, shorter interconnects, reduced power consumption, increased data bandwidth, and realizing highly-parallel systems in one device. However, the commercial acceptance of 3D ICs is currently behind its expectations, mainly due to challenges regarding manufacturing and integration technologies as well as design automation. This work addresses three selected, practically relevant design challenges: (i) increasing the constrained reusability of proven, reliable 2D intellectual property blocks, (ii) planning different types of (comparatively large) through-silicon vias with focus on their impact on design quality, as well as (iii) structural planning of massively-parallel, 3D-IC-specific interconnect structures during 3D floorplanning. A key concept of this work is to account for interconnect structures and their properties during early design phases in order to support effective and high-quality 3D-IC-design flows. To tackle the above listed challenges, modular design-flow extensions and methodologies have been developed. Experimental investigations reveal the effectiveness and efficiency of the proposed techniques, and provide findings on 3D integration with particular focus on interconnect structures. We suggest consideration of these findings when formulating guidelines for successful 3D-IC design automation.:1 Introduction 1.1 The 3D Integration Approach for Electronic Circuits 1.2 Technologies for 3D Integrated Circuits 1.3 Design Approaches for 3D Integrated Circuits 2 State of the Art in Design Automation for 3D Integrated Circuits 2.1 Thermal Management 2.2 Partitioning and Floorplanning 2.3 Placement and Routing 2.4 Power and Clock Delivery 2.5 Design Challenges 3 Research Objectives 4 Planning Through-Silicon Via Islands for Block-Level Design Reuse 4.1 Problems for Design Reuse in 3D Integrated Circuits 4.2 Connecting Blocks Using Through-Silicon Via Islands 4.2.1 Problem Formulation and Methodology Overview 4.2.2 Net Clustering 4.2.3 Insertion of Through-Silicon Via Islands 4.2.4 Deadspace Insertion and Redistribution 4.3 Experimental Investigation 4.3.1 Wirelength Estimation 4.3.2 Configuration 4.3.3 Results and Discussion 4.4 Summary and Conclusions 5 Planning Through-Silicon Vias for Design Optimization 5.1 Deadspace Requirements for Optimized Planning of Through-Silicon Vias 5.2 Multiobjective Design Optimization of 3D Integrated Circuits 5.2.1 Methodology Overview and Configuration 5.2.2 Techniques for Deadspace Optimization 5.2.3 Design-Quality Analysis 5.2.4 Planning Different Types of Through-Silicon Vias 5.3 Experimental Investigation 5.3.1 Configuration 5.3.2 Results and Discussion 5.4 Summary and Conclusions 6 3D Floorplanning for Structural Planning of Massive Interconnects 6.1 Block Alignment for Interconnects Planning in 3D Integrated Circuits 6.2 Corner Block List Extended for Block Alignment 6.2.1 Alignment Encoding 6.2.2 Layout Generation: Block Placement and Alignment 6.3 3D Floorplanning Methodology 6.3.1 Optimization Criteria and Phases and Related Cost Models 6.3.2 Fast Thermal Analysis 6.3.3 Layout Operations 6.3.4 Adaptive Optimization Schedule 6.4 Experimental Investigation 6.4.1 Configuration 6.4.2 Results and Discussion 6.5 Summary and Conclusions 7 Research Summary, Conclusions, and Outlook Dissertation Theses Notation Glossary BibliographyDreidimensional integrierte Schaltkreise (3D-ICs) beruhen auf neuartigen Herstellungs- und Integrationstechnologien, wobei vor allem “klassische” 2D-ICs vertikal zu einem neuartigen 3D-System gestapelt werden. Dieser Ansatz zur Erschließung der dritten Dimension im Schaltkreisentwurf ist nach Expertenmeinung dazu geeignet, höhere Integrationsdichten zu erreichen, heterogene Integration zu realisieren, kürzere Verdrahtungswege zu ermöglichen, Leistungsaufnahmen zu reduzieren, Datenübertragungsraten zu erhöhen, sowie hoch-parallele Systeme in einer Baugruppe umzusetzen. Aufgrund von technologischen und entwurfsmethodischen Schwierigkeiten bleibt jedoch bisher die kommerzielle Anwendung von 3D-ICs deutlich hinter den Erwartungen zurück. In dieser Arbeit werden drei ausgewählte, praktisch relevante Problemstellungen der Entwurfsautomatisierung von 3D-ICs bearbeitet: (i) die Verbesserung der (eingeschränkten) Wiederverwendbarkeit von zuverlässigen 2D-Intellectual-Property-Blöcken, (ii) die komplexe Planung von verschiedenartigen, verhältnismäßig großen Through-Silicion Vias unter Beachtung ihres Einflusses auf die Entwurfsqualität, und (iii) die strukturelle Einbindung von massiv-parallelen, 3D-IC-spezifischen Verbindungsstrukturen während der Floorplanning-Phase. Das Ziel dieser Arbeit besteht darin, Verbindungsstrukturen mit deren wesentlichen Eigenschaften bereits in den frühen Phasen des Entwurfsprozesses zu berücksichtigen. Dies begünstigt einen qualitativ hochwertigen Entwurf von 3D-ICs. Die in dieser Arbeit vorgestellten modularen Entwurfsprozess-Erweiterungen bzw. -Methodiken dienen zur effizienten Lösung der oben genannten Problemstellungen. Experimentelle Untersuchungen bestätigen die Wirksamkeit sowie die Effektivität der erarbeiten Methoden. Darüber hinaus liefern sie praktische Erkenntnisse bezüglich der Anwendung von 3D-ICs und der Planung deren Verbindungsstrukturen. Diese Erkenntnisse sind zur Ableitung von Richtlinien für den erfolgreichen Entwurf von 3D-ICs dienlich.:1 Introduction 1.1 The 3D Integration Approach for Electronic Circuits 1.2 Technologies for 3D Integrated Circuits 1.3 Design Approaches for 3D Integrated Circuits 2 State of the Art in Design Automation for 3D Integrated Circuits 2.1 Thermal Management 2.2 Partitioning and Floorplanning 2.3 Placement and Routing 2.4 Power and Clock Delivery 2.5 Design Challenges 3 Research Objectives 4 Planning Through-Silicon Via Islands for Block-Level Design Reuse 4.1 Problems for Design Reuse in 3D Integrated Circuits 4.2 Connecting Blocks Using Through-Silicon Via Islands 4.2.1 Problem Formulation and Methodology Overview 4.2.2 Net Clustering 4.2.3 Insertion of Through-Silicon Via Islands 4.2.4 Deadspace Insertion and Redistribution 4.3 Experimental Investigation 4.3.1 Wirelength Estimation 4.3.2 Configuration 4.3.3 Results and Discussion 4.4 Summary and Conclusions 5 Planning Through-Silicon Vias for Design Optimization 5.1 Deadspace Requirements for Optimized Planning of Through-Silicon Vias 5.2 Multiobjective Design Optimization of 3D Integrated Circuits 5.2.1 Methodology Overview and Configuration 5.2.2 Techniques for Deadspace Optimization 5.2.3 Design-Quality Analysis 5.2.4 Planning Different Types of Through-Silicon Vias 5.3 Experimental Investigation 5.3.1 Configuration 5.3.2 Results and Discussion 5.4 Summary and Conclusions 6 3D Floorplanning for Structural Planning of Massive Interconnects 6.1 Block Alignment for Interconnects Planning in 3D Integrated Circuits 6.2 Corner Block List Extended for Block Alignment 6.2.1 Alignment Encoding 6.2.2 Layout Generation: Block Placement and Alignment 6.3 3D Floorplanning Methodology 6.3.1 Optimization Criteria and Phases and Related Cost Models 6.3.2 Fast Thermal Analysis 6.3.3 Layout Operations 6.3.4 Adaptive Optimization Schedule 6.4 Experimental Investigation 6.4.1 Configuration 6.4.2 Results and Discussion 6.5 Summary and Conclusions 7 Research Summary, Conclusions, and Outlook Dissertation Theses Notation Glossary Bibliograph

Through-silicon-via-aware prediction and physical design for multi-granularity 3D integrated circuits

The main objective of this research is to predict the wirelength, area, delay, and power of multi-granularity three-dimensional integrated circuits (3D ICs), to develop physical design methodologies and algorithms for the design of multi-granularity 3D ICs, and to investigate the impact of through-silicon vias (TSVs) on the quality of 3D ICs. This dissertation supports these objectives by addressing six research topics. The first pertains to analytical models that predict the interconnects of multi-granularity 3D ICs, and the second focuses on the development of analytical models of the capacitive coupling of TSVs. The third and the fourth topics present design methodologies and algorithms for the design of gate- and block-level 3D ICs, and the fifth topic pertains to the impact of TSVs on the quality of 3D ICs. The final topic addresses topography variation in 3D ICs. The first section of this dissertation presents TSV-aware interconnect prediction models for multi-granularity 3D ICs. As previous interconnect prediction models for 3D ICs did not take TSV area into account, they were not capable of predicting many important characteristics of 3D ICs related to TSVs. This section will present several previous interconnect prediction models that have been improved so that the area occupied by TSVs is taken into account. The new models show numerous important predictions such as the existence of the number of TSVs minimizing wirelength. The second section presents fast estimation of capacitive coupling of TSVs and wires. Since TSV-to-TSV and TSV-to-wire coupling capacitance is dependent on their relative locations, fast estimation of the coupling capacitance of a TSV is essential for the timing optimization of 3D ICs. Simulation results show that the analytical models presented in this section are sufficiently accurate for use at various design steps that require the computation of TSV capacitance. The third and fourth sections present design methodologies and algorithms for gate- and block-level 3D ICs. One of the biggest differences in the design of 2D and 3D ICs is that the latter requires TSV insertion. Since no widely-accepted design methodology designates when, where, and how TSVs are inserted, this work develops and presents several design methodologies for gate- and block-level 3D ICs and physical design algorithms supporting them. Simulation results based on GDSII-level layouts validate the design methodologies and present evidence of their effectiveness. The fifth section explores the impact of TSVs on the quality of 3D ICs. As TSVs become smaller, devices are shrinking, too. Since the relative size of TSVs and devices is more critical to the quality of 3D ICs than the absolute size of TSVs and devices, TSVs and devices should be taken into account in the study of the impact of TSVs on the quality of 3D ICs. In this section, current and future TSVs and devices are combined to produce 3D IC layouts and the impact of TSVs on the quality of 3D ICs is investigated. The final section investigates topography variation in 3D ICs. Since landing pads fabricated in the bottommost metal layer are attached to TSVs, they are larger than TSVs, so they could result in serious topography variation. Therefore, topography variation, especially in the bottommost metal layer, is investigated and two layout optimization techniques are applied to a global placement algorithm that minimizes the topography variation of the bottommost metal layer of 3D ICs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin Sean; Committee Member: Mukhopadhyay, Saiba

On Mitigation of Side-Channel Attacks in 3D ICs: Decorrelating Thermal Patterns from Power and Activity

Various side-channel attacks (SCAs) on ICs have been successfully demonstrated and also mitigated to some degree. In the context of 3D ICs, however, prior art has mainly focused on efficient implementations of classical SCA countermeasures. That is, SCAs tailored for up-and-coming 3D ICs have been overlooked so far. In this paper, we conduct such a novel study and focus on one of the most accessible and critical side channels: thermal leakage of activity and power patterns. We address the thermal leakage in 3D ICs early on during floorplanning, along with tailored extensions for power and thermal management. Our key idea is to carefully exploit the specifics of material and structural properties in 3D ICs, thereby decorrelating the thermal behaviour from underlying power and activity patterns. Most importantly, we discuss powerful SCAs and demonstrate how our open-source tool helps to mitigate them.Comment: Published in Proc. Design Automation Conference, 201

Placement techniques in automatic analog layout generation.

模擬電路版圖設計是一個非常複雜和耗時的過程。通常情況下，設計一個高質量的模擬電路版圖需要電子工程師花費幾週甚至更長的時間。模擬電路的電子特性對於電路的細節設計非常敏感，因此，減小電路中的失配現象成為模擬電路版圖設計中一個非常重要的課題。在本論文中，我們提出了一系列實際的佈局技術，來降低電路的失配並提高繞線的成功率。我們可以非常容易的將這些技術整合至一個完整的模擬佈局和佈線的工具中，此工具可以在幾分鐘內生成一個完整的、高質量的模擬電路版圖。同時，該版圖能夠通過設計規則驗證（DRC）和佈局與電路設計一致性檢測（LVS）。模擬結果顯示，它的電路性能能夠與達到甚至超出手工設計的電路版圖。我們的論文主要作出了以下兩方面貢獻。1. 平衡佈局：對於模擬電路中的電子元器件，如電容、電阻、晶體管等進行一維和二維的平衡佈局。電子工程師可以根據不同的設計需求，通過選擇不同的佈局參數來改變電路的佈局排列方式。同時，在模擬退火算法中，我們著重考慮了器件間的匹配以生成高質量的模擬電路佈局。2. 消除阻塞的電路佈局：在模擬電路設計中，我們期望盡量避免在電子元器件密度較高的區域進行繞線。因此，我們需要在電路佈局設計過程中在電子元器件間留有足夠的佈線空間。為達到這個目標，我們提出了更精確的阻塞估計方法和版圖拓展方法，使其能夠生成一個高質量、高繞線成功率的電路佈局結果。為了驗證生成的電路版圖的質量和匹配特性，我們利用蒙地卡羅方法來模擬電路中的製程偏差和失配特性。實驗結果顯示，我們的工具可以在幾分鐘內自動生成高質量的電路版圖，與人工設計通常需要花費數日至數週相比，設計時間大幅縮短，同時電路的匹配特性得以提升。Analog layout design is a complicated and time-consuming process. It often takes couples of weeks for the layout designers to generate a qualied layout. The elec-trical properties of analog circuit are very sensitive to the layout details, and mis-match reduction becomes a very important issue in analog layout design.In this thesis, we will present some practical placement techniques to reduce mismatch and improve routability. These techniques can be easily integrated into a complete analog placement and routing ow, which can produce in just a few min-utes a complete and high quality layout for analog circuits that passes the design rule check, layout-schematic check and with performance veried by simulations. The contents of this thesis will focus on the following two issues:(1) Symmetry Placement: We consider symmetric placement of transistors, re-sistors and capacitors, which includes 1-D symmetry and 2-D symmetry (or called common centroid). Different symmetric placement congurations, derived accord-ing to the practical needs in analog design, are considered for the matching devices in the simulated annealing engine of the placer in order to generate a placement with high quality.(2) Congestion-driven Placement: In analog design, wires are preferred not be routed over active devices, so we need to leave enough spaces properly for routing between the devices during the placement process. To achieve this, we explore congestion estimation and layout expansion during the placement step in order to produce a good and routable solution.In order to verify the quality of the generated layouts in terms of mismatch, we will run Monte Carlo simulations on them with variations in process and mismatch. Experiments show that our methodology can generate high quality layout automatically in just a few minutes while manual design may take couples of days.Detailed summary in vernacular field only.Detailed summary in vernacular field only.Detailed summary in vernacular field only.Detailed summary in vernacular field only.Detailed summary in vernacular field only.Cui, Guxin.Thesis (M.Phil.)--Chinese University of Hong Kong, 2012.Abstracts also in Chinese.Abstract --- p.iAcknowledgement --- p.ivChapter 1 --- Introduction --- p.1Chapter 1.1 --- Background --- p.1Chapter 1.2 --- Physical Design --- p.2Chapter 1.3 --- Analog Placement --- p.4Chapter 1.3.1 --- Methodologies of Analog Placement --- p.4Chapter 1.3.2 --- Symmetry Constraints of Analog Placement --- p.5Chapter 1.4 --- Process Variation and Layout Mismatch --- p.6Chapter 1.4.1 --- Process Variation --- p.6Chapter 1.4.2 --- Random Mismatch and Systematic Mismatch --- p.7Chapter 1.5 --- Monte Carlo Simulation Procedure --- p.9Chapter 1.6 --- Problem Formulation of Placement --- p.9Chapter 1.7 --- Motivations --- p.10Chapter 1.8 --- Contributions --- p.11Chapter 1.9 --- Thesis Organization --- p.12Chapter 2 --- Literature Review on Analog Placement --- p.13Chapter 2.1 --- Topological Representations Handling Symmetry Constraints --- p.14Chapter 2.1.1 --- Symmetry within the Sequence-Pair (SP) Representation . --- p.14Chapter 2.1.2 --- Block Placement with Symmetry Constraints Based on the O-Tree Non-Slicing Representation --- p.16Chapter 2.1.3 --- Placement with Symmetry Constraints for Analog Layout Design Using TCG-S --- p.17Chapter 2.1.4 --- Modeling Non-Slicing Floorplans with Binary Trees --- p.19Chapter 2.1.5 --- Segment Trees Handle Symmetry Constraints --- p.20Chapter 2.1.6 --- Center-based Corner Block List --- p.22Chapter 2.2 --- Other Works on Analog Placement Constraints --- p.25Chapter 2.2.1 --- Deterministic Analog Placement with Hierarchically Bounded Enumeration and Enhanced Shape Functions --- p.25Chapter 2.2.2 --- Analog Placement Based on Symmetry-Island Formulation --- p.27Chapter 2.2.3 --- Heterogeneous B*-Trees for Analog Placement with Symmetry and Regularity Considerations --- p.28Chapter 2.3 --- Summary --- p.31Chapter 3 --- Common-Centroid Analog Placement --- p.32Chapter 3.1 --- Problem Formulation --- p.33Chapter 3.2 --- Overview of Our Work --- p.35Chapter 3.3 --- Handling Common Centroid Constraints in Different Devices --- p.37Chapter 3.3.1 --- Common Centroid Placement of Resistors --- p.38Chapter 3.3.2 --- Common Centroid Placement of Transistors --- p.44Chapter 3.3.3 --- Common Centroid Placement of Capacitors --- p.47Chapter 3.4 --- Congestion Estimation and Layout Expansion --- p.50Chapter 3.4.1 --- Blockage-Aware Congestion Estimation --- p.51Chapter 3.4.2 --- Layout Expansion --- p.56Chapter 3.5 --- Simulated Annealing --- p.59Chapter 3.5.1 --- Types of Moves --- p.59Chapter 3.5.2 --- Handling Devices in Symmetry Group --- p.59Chapter 3.5.3 --- Cost Function of Simulated Annealing --- p.61Chapter 3.6 --- Summary --- p.62Chapter 4 --- Experimental Results and Monte-Carlo Simulations --- p.64Chapter 4.1 --- Study of Congestion-driven Layout Expansion --- p.64Chapter 4.2 --- Monte Carlo Simulations --- p.70Chapter 4.2.1 --- Devices Modeling --- p.70Chapter 4.2.2 --- Study of Layouts with and without Symmetry Groups --- p.71Chapter 4.2.3 --- Study of Layouts with and without Self-Symmetry Devices --- p.73Chapter 4.2.4 --- Study of Layouts with Different Number of Symmetry Groups --- p.74Chapter 4.2.5 --- Study of Large and Small Size Capacitors Array --- p.76Chapter 4.3 --- Comparison of Automatic and Manual Layouts using Monte Carlo Simulations --- p.79Chapter 5 --- Conclusion --- p.86Bibliography --- p.8

Multiphysics modeling and simulation for large-scale integrated circuits

This dissertation is a process of seeking solutions to two important and challenging problems related to the design of modern integrated circuits (ICs): the ever increasing couplings among the multiphysics and the large problem size arising from the escalating complexity of the designs. A multiphysics-based computer-aided design methodology is proposed and realized to address multiple aspects of a design simultaneously, which include electromagnetics, heat transfer, fluid dynamics, and structure mechanics. The multiphysics simulation is based on the finite element method for its unmatched capabilities in handling complicate geometries and material properties. The capability of the multiphysics simulation is demonstrated through its applications in a variety of important problems, including the static and dynamic IR-drop analyses of power distribution networks, the thermal-ware high-frequency characterization of through-silicon-via structures, the full-wave electromagnetic analysis of high-power RF/microwave circuits, the modeling and analysis of three-dimensional ICs with integrated microchannel cooling, the characterization of micro- and nanoscale electrical-mechanical systems, and the modeling of decoupling capacitor derating in the power integrity simulations. To perform the large-scale analysis in a highly efficient manner, a domain decomposition scheme, parallel computing, and an adaptive time-stepping scheme are incorporated into the proposed multiphysics simulation. Significant reduction in computation time is achieved through the two numerical schemes and the parallel computing with multiple processors

Physical design methodologies for monolithic 3D ICs

The objective of this research is to develop physical design methodologies for monolithic 3D ICs and use them to evaluate the improvements in the power-performance envelope offered over 2D ICs. In addition, design-for-test (DfT) techniques essential for the adoption of shorter term through-silicon-via (TSV) based 3D ICs are explored. Testing of TSV-based 3D ICs is one of the last challenges facing their commercialization. First, a pre-bond testable 3D scan chain construction technique is developed. Next, a transition-delay-fault test architecture is presented, along with a study on how to mitigate IR-drop. Finally, to facilitate partitioning, a quick and accurate framework for test-TSV estimation is developed. Block-level monolithic 3D ICs will be the first to emerge, as significant IP can be reused. However, no physical design flows exist, and hence a monolithic 3D floorplanning framework is developed. Next, inter-tier performance differences that arise due to the not yet mature fabrication process are investigated and modeled. Finally, an inter-tier performance-difference aware floorplanner is presented, and it is demonstrated that high quality 3D floorplans are achievable even under these inter-tier differences. Monolithic 3D offers sufficient integration density to place individual gates in three dimensions and connect them together. However, no tools or techniques exist that can take advantage of the high integration density offered. Therefore, a gate-level framework that leverages existing 2D ICs tools is presented. This framework also provides congestion modeling and produces results that minimize routing congestion. Next, this framework is extended to commercial 2D IC tools, so that steps such as timing optimization and clock tree synthesis can be applied. Finally, a voltage-drop-aware partitioning technique is presented that can alleviate IR-drop issues, without any impact on the performance or maximum operating temperature of the chip.Ph.D

Design of LCOS microdisplay backplanes for projection applications

De evolutie van licht emitterende diodes (LED) heeft ervoor gezorgd dat het op dit moment interessant wordt om deze componenten als lichtbron te gebruiken in projectiesystemen. LED’s hebben belangrijke voordelen vergeleken met klassieke booglampen. Ze zijn compact, ze hebben een veel grotere levensduur en ogenblikkelijke schakeltijden, ze werken op lage spanningen, etc. LED’s zijn smalbandig en kunnen een groterekleurenbereik realiseren. Ze hebben momenteel echter een beperkte helderheid. Naast de lichtbron is het type van de lichtklep ook bepalend voor de kwaliteit van een projectiesysteem. Er bestaan verschillende lichtkleptechnologieën waaronder die van de reflectieve LCOS-panelen. Deze lichtkleppen kunnen zeer hoge resoluties hebben en wordenvaak gebruikt in kwalitatieve, professionele projectiesystemen. LED’s zijn echter totaal verschillend van booglampen. Ze hebben een andere vorm, package, stralingspatroon, aansturing, fysische en thermische eigenschappen, etc. Hoewel er een twintigtal optische architecturen bekend zijn voor reflectieve beeldschermen (met een booglamp als lichtbron), zijn ze niet geschikt voor LED-projectoren en moeten nieuwe optische architecturen en een elektronische aansturing ontwikkeld worden. In dit doctoraat werd er hieromtrent onderzoek gedaan. Er werd uiteindelijk een driekleurenprojector (R, G, B) met een efficiënt LED-belichtingssysteem gebouwd met twee LCOS-lichtkleppen. Deze LEDprojector heeft superieure eigenschappen (zeer lange levensduur, beeldkwaliteit, etc.) en een matige lichtopbrengst

Temperature-Aware Design and Management for 3D Multi-Core Architectures

Vertically-integrated 3D multiprocessors systems-on-chip (3D MPSoCs) provide the means to continue integrating more functionality within a unit area while enhancing manufacturing yields and runtime performance. However, 3D MPSoCs incur amplified thermal challenges that undermine the corresponding reliability. To address these issues, several advanced cooling technologies, alongside temperature-aware design-time optimizations and run-time management schemes have been proposed. In this monograph, we provide an overall survey on the recent advances in temperature-aware 3D MPSoC considerations. We explore the recent advanced cooling strategies, thermal modeling frameworks, design-time optimizations and run-time thermal management schemes that are primarily targeted for 3D MPSoCs. Our aim of proposing this survey is to provide a global perspective, highlighting the advancements and drawbacks on the recent state-of-the-ar