Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as an alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger short-circuit currents, it is also observed that flat solar cell architectures allow for passivation of the V2O5/n-Si interface, giving significant carrier lifetimes of 200 µs (equivalent to a surface recombination velocity of Seff ~140 cm s-1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ¿FTMO occurs during the heterojunction formation with the consequent dipole layer enlargement ¿’=¿+¿FTMO. Our results provide new insights into the TMO/c-Si contact energetics, carrier transport across the interface and surface recombination allowing for further understanding of the nature of TMO/c-Si heterojunctions.Peer ReviewedPostprint (published version

Design and analysis of a broadband SIS-mixer for the Heterodyne Instrument for the Far Infrared (HIFI) on the Herschel Space Observatory

In this thesis the design and analysis of SIS-mixers (SIS: superconductor-isolator-superconductor) for the use as low-noise and broad-band detectors in the submm-region for astronomical observations is described. The SIS-mixers have been developed for the frequency band 2 (636-802 GHz) of the Heterodyne Instrument for the Far Infrared (HIFI) on ESA’s space-observatory Herschel. The required performance baseline has been defined by the HIFI-consortium in terms of the estimated noise temperature contribution of the mixer to be 110 K at 636 GHz and 150 K at 802 GHz. In the frequency region between 80 GHz and 900 GHz Heterodyne SIS mixers are established as the best devices for low noise mixing with a high spectral resolution (mixing of the signal radiation with local oscillator, LO). For the HIFI band 2 mixers, the technology of Nb/Al-Al2O3/Nb-junctions has been used with junction areas of 0.5-1.0 um2, a target value for the current density jc of 15 kA/cm2 and a gap-voltage of 2.75-2.77 mV. For the compensation of the SIS-junction’s intrinsic capacitance and the optimized power coupling to the tunnel junction, two types of matching circuits have been theoretically modelled and experimentally studied: (1) three-step transformer single junction devices and (2) double-junction devices. This has been done for two material combinations: for an all-superconductive micro strip NbTiN/SiO2/Nb, and for the superconductor/normal-conductor combination NbTiN/SiO2/Al...thesi

Nanoscale Au-ZnO heterostructure developed by atomic layer deposition towards amperometric H2O2 detection

Nanoscale Au-ZnO heterostructures were fabricated on 4-in. SiO2/Si wafers by the atomic layer deposition (ALD) technique. Developed Au-ZnO heterostructures after post-deposition annealing at 250 degrees C were tested for amperometric hydrogen peroxide (H2O2) detection. The surface morphology and nanostructure of Au-ZnO heterostructures were examined by field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), etc. Additionally, the electrochemical behavior of Au-ZnO heterostructures towards H2O2 sensing under various conditions is assessed by chronoamperometry and electrochemical impedance spectroscopy (EIS). The results showed that ALD-fabricated Au-ZnO heterostructures exhibited one of the highest sensitivities of 0.53 mu A mu M(-1)cm(-2), the widest linear H2O2 detection range of 1.0 mu M-120mM, a low limit of detection (LOD) of 0.78 mu M, excellent selectivity under the normal operation conditions, and great long-term stability. Utilization of the ALD deposition method opens up a unique opportunity for the improvement of the various capabilities of the devices based on Au-ZnO heterostructures for amperometric detection of different chemicals