A 12GHz 30mW 130nm CMOS Rotary Travelling Wave Voltage Controlled Oscillator

This paper reports a 12GHz Rotary Travelling Wave (RTW) Voltage Controlled Oscillator designed in a 130nm CMOS technology. The phase noise and power consumption performances were compared with the literature and with telecommunication standards for broadcast satellite applications. The RTW VCO exhibits a -106dBc/Hz@1MHz and a 30mW power consumption with a sensibility of 400 MHz/V. Finally, requirements are given for a PLL implementation of the RTW VCO and simulated results are presented

Collective Pulse Dynamics: A New Timing Circuit Strategy

This work presents a novel CMOS behavior of self stabilization of ring oscillators using collective dynamics. It shows that phase error correction can occur in ring oscillators over multiple cycles without an external reference via the collective dynamics of pulses. In time domain this shows up as timing stability improvement in oscillators. Different timing stability metrics were analyzed to determine the correct methodology to analyze this stability improvement. Behavioral models were made to capture the effects of local dynamics and its collective effects. These models were shown to have a good correlation with the HSPICE circuit simulations and measured values. Multiple oscillator topologies and architectures were fabricated to test the model, behavior and subsequent analysis. Different pulse amplifier based ring oscillators show trends similar to that predicted by simulations and empirical relationships developed using behavioral simulations. Further transmission line stabilized traveling wave version of the pulse oscillators show a higher stability improvement. This work opens up a new design space in the timing circuits design where all the other conventional tricks are still applicable. It also opens up an application space due to the timing stability improvement in the order of 1000 cycles where conventional ADC’s and TDC’s work. Finally this work eases up the constraints of loop filter and source phase noise when oscillators are operated in a phase locked loop

Ku band rotary traveling-wave voltage controlled oscillator

Voltage-controlled oscillator (VCO) plays a key role in determination of the link budget of wireless communication, and consequently the performance of the transceiver. Lowering the noise contribution from the VCO to the entire system is always challenging and remains the active research area. Motivated by high demands for the low-phase noise, low-power consumption VCO in the application of 5G, radar-sensing system, implantable device, to name a few, this research focused on the design of a rotary travelling-wave oscillator (RTWO). A power conscious RTWO with reliable direction control of the wave propagation was investigated. The phase noise was analyzed based on the proposed RTWO. The phase noise reduction technique was introduced by using tail current source filtering technique in which a figure-8 inductors were employed. Three RTWO were implemented based on GF 130 nm standard CMOS process and TSMC 130 nm standard CMOS process. The first design was achieving 16-GHz frequency with power consumption of 5.8-mW with 190.3 dBc/Hz FoM at 1 MHz offset. The second and third design were operating at 14-GHz with a power consumption range of 13-18.4mW and 14.6-20.5mW, respectively. The one with filtering technique achieved FoM of 184.8 dBc/Hz at 1 MHz whereas the one without inudctor filtering obtained FoM of 180.8 dBc/Hz at 1 MHz offset based on simulation

Cmos Rotary Traveling Wave Oscillators (Rtwos)

Rotary Traveling Wave Oscillator (RTWO) represents a transmission line based technology for multi-gigahertz multiple phase clock generation. RTWO is known for providing low jitter and low phase noise signals but the issue of high power consumption is a major drawback in its application. Direction of wave propagation is random and is determined by the least resistance path in the absence of an external direction control circuit. The objective of this research is to address some of the problems of RTWO design, including high power consumption, uncertainty of propagation direction and optimization of design variables. Included is the modeling of RTWO for sensitivity, phase noise and power analysis. Research objectives were met through design, simulation and implementation. Different designs of RTWO in terms of ring size and number of amplifier stages were implemented and tested. Design tools employed include Agilent ADS, Cadence EDA, SONNET and Altium PCB Designer. Test chip was fabricated using IBM 0.18 μm RF CMOS technology. Performance measures of interest are tuning range, phase noise and power consumption. Agilent ADS and SONNET were used for electromagnetic modeling of transmission lines and electromagnetic field radiation. For each design, electromagnetic simulations were carried out followed by oscillation synthesis based on circuit simulation in Cadence Spectre. RTWO frequencies between 2 GHz and 12 GHz were measured based on the ring size of transmission lines. Simulated microstrip transmission line segments had a quality factor between 5.5 and 18. For the various designs, power consumption ranged from 20 mW to 120 mW. Measured phase noise ranged between -123 dBc/Hz and -87 dBc/Hz at 1 MHz offset. Development also included the design of a wide band buffer and a printed circuit board with high signal integrity for accurate measurement of oscillation frequency and other performance measures. Simulated performance, schematics and measurement results are presented

Multi-Loop-Ring-Oscillator Design and Analysis for Sub-Micron CMOS

Ring oscillators provide a central role in timing circuits for today?s mobile devices and desktop computers. Increased integration in these devices exacerbates switching noise on the supply, necessitating improved supply resilience. Furthermore, reduced voltage headroom in submicron technologies limits the number of stacked transistors available in a delay cell. Hence, conventional single-loop oscillators offer relatively few design options to achieve desired specifications, such as supply rejection. Existing state-of-the-art supply-rejection- enhancement methods include actively regulating the supply with an LDO, employing a fully differential or current-starved delay cell, using a hi-Z voltage-to-current converter, or compensating/calibrating the delay cell. Multiloop ring oscillators (MROs) offer an additional solution because by employing a more complex ring-connection structure and associated delay cell, the designer obtains an additional degree of freedom to meet the desired specifications. Designing these more complex multiloop structures to start reliably and achieve the desired performance requires a systematic analysis procedure, which we attack on two fronts: (1) a generalized delay-cell viewpoint of the MRO structure to assist in both analysis and circuit layout, and (2) a survey of phase-noise analysis to provide a bank of methods to analyze MRO phase noise. We distill the salient phase-noise-analysis concepts/key equations previously developed to facilitate MRO and other non-conventional oscillator analysis. Furthermore, our proposed analysis framework demonstrates that all these methods boil down to obtaining three things: (1) noise modulation function (NMF), (2) noise transfer function (NTF), and (3) current-controlled-oscillator gain (KICO). As a case study, we detail the design, analysis, and measurement of a proposed multiloop ring oscillator structure that provides improved power-supply isolation (more than 20dB increase in supply rejection over a conventional-oscillator control case fabricated on the same test chip). Applying our general multi-loop-oscillator framework to this proposed MRO circuit leads both to design-oriented expressions for the oscillation frequency and supply rejection as well as to an efficient layout technique facilitating cross-coupling for improved quadrature accuracy and systematic, substantially simplified layout effort

RF CMOS Oscillators for Modern Wireless Applications

While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include: Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMO

Multi-Loop-Ring-Oscillator Design and Analysis for Sub-Micron CMOS

Ring oscillators provide a central role in timing circuits for today?s mobile devices and desktop computers. Increased integration in these devices exacerbates switching noise on the supply, necessitating improved supply resilience. Furthermore, reduced voltage headroom in submicron technologies limits the number of stacked transistors available in a delay cell. Hence, conventional single-loop oscillators offer relatively few design options to achieve desired specifications, such as supply rejection. Existing state-of-the-art supply-rejection- enhancement methods include actively regulating the supply with an LDO, employing a fully differential or current-starved delay cell, using a hi-Z voltage-to-current converter, or compensating/calibrating the delay cell. Multiloop ring oscillators (MROs) offer an additional solution because by employing a more complex ring-connection structure and associated delay cell, the designer obtains an additional degree of freedom to meet the desired specifications. Designing these more complex multiloop structures to start reliably and achieve the desired performance requires a systematic analysis procedure, which we attack on two fronts: (1) a generalized delay-cell viewpoint of the MRO structure to assist in both analysis and circuit layout, and (2) a survey of phase-noise analysis to provide a bank of methods to analyze MRO phase noise. We distill the salient phase-noise-analysis concepts/key equations previously developed to facilitate MRO and other non-conventional oscillator analysis. Furthermore, our proposed analysis framework demonstrates that all these methods boil down to obtaining three things: (1) noise modulation function (NMF), (2) noise transfer function (NTF), and (3) current-controlled-oscillator gain (KICO). As a case study, we detail the design, analysis, and measurement of a proposed multiloop ring oscillator structure that provides improved power-supply isolation (more than 20dB increase in supply rejection over a conventional-oscillator control case fabricated on the same test chip). Applying our general multi-loop-oscillator framework to this proposed MRO circuit leads both to design-oriented expressions for the oscillation frequency and supply rejection as well as to an efficient layout technique facilitating cross-coupling for improved quadrature accuracy and systematic, substantially simplified layout effort

RF CMOS Oscillators for Modern Wireless Applications

While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include: Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMO

Microwave CMOS VCOs and Front-Ends - using integrated passives on-chip and on-carrier

The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on receiver front-ends composed of Low Noise Amplifiers (LNAs), Mixers, and Voltage Controlled Oscillators (VCOs) operating at microwave frequencies. Traditionally, microwave electronics has used exclusive and more expensive semiconductor technologies (III-V materials). However, the rapid development of consumer electronics (e.g. video game consoles) the last decade has pushed the silicon CMOS IC technology towards even smaller feature sizes. This has resulted in high speed transistors (high fT and fmax) with low noise figures. However, as the breakdown voltages have decreased, a lower supply voltage must be used, which has had a negative impact on linearity and dynamic range. Nonetheless, todays downscaled CMOS technology is a feasible alternative for many microwave and even millimeter wave applications. The low quality factor (Q) of passive components on-chip usually limits the high frequency performance. For inductors realized in a standard CMOS process the substrate coupling results in a degraded Q. The quality factor can, however, be improved by moving the passive components off-chip and integrating them on a low loss carrier. This thesis therefore features microwave front-end and VCO designs in CMOS, where some designs have been flip-chip mounted on carriers featuring high Q inductors and low loss baluns. The thesis starts with an introduction to wireless communication, receiver architectures, front-end receiver blocks, and low loss carrier technology, followed by the included papers. The six included papers show the capability of CMOS and carrier technology at microwave frequencies: Papers II, III, and VI demonstrate fully integrated CMOS circuit designs. An LC-VCO using an accumulation mode varactor is presented in Paper II, a QVCO using 4-bit switched tuning is shown in Paper III, and a quadrature receiver front-end (including QVCO) is demonstrated in paper VI. Papers I and IV demonstrate receiver front-ends using low loss baluns on carrier for the LO and RF signals. Paper IV also includes a front-end using single-ended RF input which is converted to differential form in a novel merged LNA and balun. A VCO demonstrating the benefits of a high Q inductor on carrier is presented in Paper V