Weak coupling limits in a stochastic model of heat conduction

We study the Brownian momentum process, a model of heat conduction, weakly coupled to heat baths. In two different settings of weak coupling to the heat baths, we study the non-equilibrium steady state and its proximity to the local equilibrium measure in terms of the strength of coupling. For three and four site systems, we obtain the two-point correlation function and show it is generically not multilinear.Comment: 18 page

Superconductivity of disordered Dirac fermions

We study the effect of disorder on massless, spinful Dirac fermions in two spatial dimensions with attractive interactions, and show that the combination of disorder and attractive interactions is deadly to the Dirac semimetal phase. First, we derive the zero temperature phase diagram of a clean Dirac fermion system with tunable doping level ({\mu}) and attraction strength (g). We show that it contains two phases: a superconductor and a Dirac semimetal. Then, we show that arbitrarily weak disorder destroys the Dirac semimetal, turning it into a superconductor. We discuss the strength of the superconductivity for both long range and short range disorder. For long range disorder, the superconductivity is exponentially weak in the disorder strength. For short range disorder, a uniform mean field analysis predicts that superconductivity should be doubly exponentially weak in the disorder strength. However, a more careful treatment of mesoscopic fluctuations suggests that locally superconducting puddles should form at a much higher temperature, and should establish global phase coherence at a temperature that is only exponentially small in weak disorder. We also discuss the effect of disorder on the quantum critical point of the clean system, building in the effect of disorder through a replica field theory. We show that disorder is a relevant perturbation to the supersymmetric quantum critical point. We expect that in the presence of attractive interactions, the flow away from the critical point ends up in the superconducting phase, although firm conclusions cannot be drawn since the renormalization group analysis flows to strong coupling. We argue that although we expect the quantum critical point to get buried under a superconducting phase, signatures of the critical point may be visible in the finite temperature quantum critical regime.Comment: Added some discussion, particularly pertaining to proximity effec

Avoided Critical Behavior in a Uniformly Frustrated System

We study the effects of weak long-ranged antiferromagnetic interactions of strength $Q$ on a spin model with predominant short-ranged ferromagnetic interactions. In three dimensions, this model exhibits an avoided critical point in the sense that the critical temperature $T_c(Q=0)$ is strictly greater than $\lim_{Q\to 0} T_c(Q)$. The behavior of this system at temperatures less than $T_c(Q=0)$ is controlled by the proximity to the avoided critical point. We also quantize the model in a novel way to study the interplay between charge-density wave and superconducting order.Comment: 32 page Latex file, figures available from authors by reques

Boosting proximity spin orbit coupling in graphene/WSe2_2 heterostructures via hydrostatic pressure

Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changing the interlayer distance via hydrostatic pressure can be utilized to enhance the interlayer coupling between the layers. In this work, we report measurements on a graphene/WSe$_2$ heterostructure exposed to increasing hydrostatic pressure. A clear transition from weak localization to weak anti-localization is visible as the pressure increases, demonstrating the increase of induced SOC in graphene

Boosting proximity spin orbit coupling in graphene/WSe2 heterostructures via hydrostatic pressure

Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changing the interlayer distance via hydrostatic pressure can be utilized to enhance the interlayer coupling between the layers. In this work, we report measurements on a graphene/WSe2 heterostructure exposed to increasing hydrostatic pressure. A clear transition from weak localization to weak anti-localization is visible as the pressure increases, demonstrating the increase of induced SOC in graphene

Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures

Graphene/MoS2 heterostructures are formed by combining the nanosheets of graphene and monolayer MoS2. The electronic features of both constituent monolayers are rather well-preserved in the resultant heterostructure due to the weak van der Waals interaction between the layers. However, the proximity of MoS2 induces strong spin orbit coupling effect of strength ~1 meV in graphene, which is nearly three orders of magnitude larger than the intrinsic spin orbit coupling of pristine graphene. This opens a bandgap in graphene and further causes anticrossings of the spin-nondegenerate bands near the Dirac point. Lattice incommensurate graphene/MoS2 heterostructure exhibits interesting moire' patterns which have been observed in experiments. The electronic bandstructure of heterostructure is very sensitive to biaxial strain and interlayer twist. Although the Dirac cone of graphene remains intact and no charge-transfer between graphene and MoS2 layers occurs at ambient conditions, a strain-induced charge-transfer can be realized in graphene/MoS2 heterostructure. Application of a gate voltage reveals the occurrence of a topological phase transition in graphene/MoS2 heterostructure. In this chapter, we discuss the crystal structure, interlayer effects, electronic structure, spin states, and effects due to strain and substrate proximity on the electronic properties of graphene/MoS2 heterostructure. We further present an overview of the distinct topological quantum phases of graphene/MoS2 heterostructure and review the recent advancements in this field.Comment: 31 pages, 12 figure