Optical Properties of Bismuth Nanostructures Towards the Ultrathin Film Regime

Bulk bismuth presents outstanding optical properties, such as a giant infrared refractive index (n near 10) and a negative ultraviolet visible permittivity induced by giant interband electronic transitions. Although such properties are very appealing for applications in nanophotonics, the dielectric function of bismuth nanostructures has been scarcely studied. Here, we determine by spectroscopic ellipsometry the far infrared to ultraviolet dielectric function of pulsed laser deposited bismuth thin films with nominal thickness tBi varied from near 10 nm to several tens of nm. For tBi above 15 nm, the films display a continuous structure and their dielectric function is comparable with that of bulk bismuth. For tBi below 15 nm, the film structure is discontinuous, and the dielectric function differs markedly from that of bulk bismuth. It is proposed from FDTD simulations that this marked difference arises mainly from effective medium effects induced by the discontinuous film structure, where quantum electronic confinement does not play a dominant role. This suggests that ultrathin and continuous bismuth films should present the same outstanding optical properties as bulk bismuth for high performance nanophotonic devices

The optical properties of bismuth nanowires

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.Includes bibliographical references (p. 170-177).The optical absorption of bismuth nanowires in the energy (wavenumber) range of 600 - 4000cm-1 is studied. Optical reflection and transmission spectra reveal that bismuth nanowires have a large and intense absorption peak as well as several smaller absorption peaks which are not measured in bulk bismuth. The smaller absorption peaks fit reasonably well to theoretical models for intersubband absorption in bismuth nanowires. The wire diameter, polarization, and doping dependencies as well as the spectral shape of the dominant peak agree with simulations of the optical absorption resulting from an L-point valence to T-point valence band electronic transition. The large absorption peak is present even for nanowires too large to exhibit quantum confinement, thus showing that the absorption results from a surface-induced effect and not from quantum confinement. The enhanced optical absorption in nanowires over bulk bismuth is attributed to a surface term in the matrix element which results from the spacial gradient of the dielectric function and the large dielectric mismatch between bismuth and the surrounding alumina or air. A comparison of the measured spectra with simulations of optical absorption resulting from direct L-point electronic transitions demonstrated that this absorption mechanism is not dominant in our materials. In order to explore the optical properties of bismuth nanowires, two methods were developed. First, effective medium theory applied in reverse was used to deduce the dielectric function of materials smaller than the wavelength of light. Second, a technique to fabricate nanowires with diameters above 200nm was transfered into our laboratory.(cont.) The enhanced coupling between the L-T point valence bands in nanowires may lead to a very accurate measurement of the band gap and band overlap in bismuth as a function of doping and temperature. In addition, the discovery of the enhanced interband coupling resulting from the surface contribution to the matrix element has many implications, especially if this result is applicable to other systems.by Marcie R. Black.Ph.D

Composite THz materials using aligned metallic and semiconductor microwires, experiments and interpretation

We report fabrication method and THz characterization of composite films containing either aligned metallic (tin alloy) microwires or chalcogenide As2Se3 microwires. The microwire arrays are made by stack-and-draw fiber fabrication technique using multi-step co-drawing of low-melting-temperature metals or semiconductor glasses together with polymers. Fibers are then stacked together and pressed into composite films. Transmission through metamaterial films is studied in the whole THz range (0.1-20 THz) using a combination of FTIR and TDS. Metal containing metamaterials are found to have strong polarizing properties, while semiconductor containing materials are polarization independent and could have a designable high refractive index. Using the transfer matrix theory, we show how to retrieve the complex polarization dependent refractive index of the composite films. We then detail the selfconsistent algorithm for retrieving the optical properties of the metal alloy used in the fabrication of the metamaterial layers by using an effective medium approximation. Finally, we study challenges in fabrication of metamaterials with sub-micrometer metallic wires by repeated stack-and-draw process by comparing samples made using 2, 3 and 4 consecutive drawings. When using metallic alloys we observe phase separation effects and nano-grids formation on small metallic wires

Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires

We report the experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3). The value of the exponent in the hopping equation was extracted as ~ 1/2 for different widths of nanowires, which is the proof of the presence of Efros-Shklovskii hopping transport mechanism in a strongly disordered system. High localization lengths (0.5nm, 20nm) were calculated for the devices. A careful analysis of the temperature dependent fluctuations present in the magnetoresistance curves, using the standard Universal Conductance Fluctuation theory, indicates the presence of 2D topological surface states. Also, the surface state contribution to the conductance was found very close to one conductance quantum. We believe that our experimental findings shed light on the understanding of quantum transport in disordered topological insulator based nanostructures.Comment: 14pages, 4 figure

High-Q bismuth silicate nonlinear glass microsphere resonators

The fabrication and characterization of a bismuth-silicate glass microsphere resonator has been demonstrated. At wavelengths near 1550 nm, high-modes can be efficiently excited in a 179 µm diameter bismuth-silicate glass microsphere via evanescent coupling using a tapered silica fiber with a waist diameter of circa 2 µm. Resonances with Q-factors as high as were observed. The dependence of the spectral response on variations in the input power level was studied in detail to gain an insight into power-dependent thermal resonance shifts. Because of their high nonlinearity and high- factors, bismuth-silicate glass microspheres offer the potential for robustly assembled fully integrated all-optical switching devices