Understanding the thermal implications of multicore architectures

Multicore architectures are becoming the main design paradigm for current and future processors. The main reason is that multicore designs provide an effective way of overcoming instruction-level parallelism (ILP) limitations by exploiting thread-level parallelism (TLP). In addition, it is a power and complexity-effective way of taking advantage of the huge number of transistors that can be integrated on a chip. On the other hand, today's higher than ever power densities have made temperature one of the main limitations of microprocessor evolution. Thermal management in multicore architectures is a fairly new area. Some works have addressed dynamic thermal management in bi/quad-core architectures. This work provides insight and explores different alternatives for thermal management in multicore architectures with 16 cores. Schemes employing both energy reduction and activity migration are explored and improvements for thread migration schemes are proposed.Peer ReviewedPostprint (published version

Thermo-mechanical analysis of flexible and stretchable systems

This paper presents a summary of the modeling and technology developed for flexible and stretchable electronics. The integration of ultra thin dies at package level, with thickness in the range of 20 to 30 μ m, into flexible and/or stretchable materials are demonstrated as well as the design and reliability test of stretchable metal interconnections at board level are analyzed by both experiments and finite element modeling. These technologies can achieve mechanically bendable and stretchable subsystems. The base substrate used for the fabrication of flexible circuits is a uniform polyimide layer, while silicones materials are preferred for the stretchable circuits. The method developed for chip embedding and interconnections is named Ultra Thin Chip Package (UTCP). Extensions of this technology can be achieved by stacking and embedding thin dies in polyimide, providing large benefits in electrical performance and still allowing some mechanical flexibility. These flexible circuits can be converted into stretchable circuits by replacing the relatively rigid polyimide by a soft and elastic silicone material. We have shown through finite element modeling and experimental validation that an appropriate thermo mechanical design is necessary to achieve mechanically reliable circuits and thermally optimized packages

Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

Evaluation of the impact of solder die attach versus epoxy die attach in a state of the art power package

Subject of this paper is the thermal investigation of epoxy (EDA) and solder (SDA) die attaches by a comparison of an ASIC with multiple heat sources in different package assemblies. Static and transient thermal measurements and simulations were performed to investigate the thermal behavior of two samples in a state of the art QFP power package differing only in the die attach material (EDA and SDA).Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Improving processor efficiency through thermal modeling and runtime management of hybrid cooling strategies

One of the main challenges in building future high performance systems is the ability to maintain safe on-chip temperatures in presence of high power densities. Handling such high power densities necessitates novel cooling solutions that are significantly more efficient than their existing counterparts. A number of advanced cooling methods have been proposed to address the temperature problem in processors. However, tradeoffs exist between performance, cost, and efficiency of those cooling methods, and these tradeoffs depend on the target system properties. Hence, a single cooling solution satisfying optimum conditions for any arbitrary system does not exist. This thesis claims that in order to reach exascale computing, a dramatic improvement in energy efficiency is needed, and achieving this improvement requires a temperature-centric co-design of the cooling and computing subsystems. Such co-design requires detailed system-level thermal modeling, design-time optimization, and runtime management techniques that are aware of the underlying processor architecture and application requirements. To this end, this thesis first proposes compact thermal modeling methods to characterize the complex thermal behavior of cutting-edge cooling solutions, mainly Phase Change Material (PCM)-based cooling, liquid cooling, and thermoelectric cooling (TEC), as well as hybrid designs involving a combination of these. The proposed models are modular and they enable fast and accurate exploration of a large design space. Comparisons against multi-physics simulations and measurements on testbeds validate the accuracy of our models (resulting in less than 1C error on average) and demonstrate significant reductions in simulation time (up to four orders of magnitude shorter simulation times). This thesis then introduces temperature-aware optimization techniques to maximize energy efficiency of a given system as a whole (including computing and cooling energy). The proposed optimization techniques approach the temperature problem from various angles, tackling major sources of inefficiency. One important angle is to understand the application power and performance characteristics and to design management techniques to match them. For workloads that require short bursts of intense parallel computation, we propose using PCM-based cooling in cooperation with a novel Adaptive Sprinting technique. By tracking the PCM state and incorporating this information during runtime decisions, Adaptive Sprinting utilizes the PCM heat storage capability more efficiently, achieving 29\% performance improvement compared to existing sprinting policies. In addition to the application characteristics, high heterogeneity in on-chip heat distribution is an important factor affecting efficiency. Hot spots occur on different locations of the chip with varying intensities; thus, designing a uniform cooling solution to handle worst-case hot spots significantly reduces the cooling efficiency. The hybrid cooling techniques proposed as part of this thesis address this issue by combining the strengths of different cooling methods and localizing the cooling effort over hot spots. Specifically, the thesis introduces LoCool, a cooling system optimizer that minimizes cooling power under temperature constraints for hybrid-cooled systems using TECs and liquid cooling. Finally, the scope of this work is not limited to existing advanced cooling solutions, but it also extends to emerging technologies and their potential benefits and tradeoffs. One such technology is integrated flow cell array, where fuel cells are pumped through microchannels, providing both cooling and on-chip power generation. This thesis explores a broad range of design parameters including maximum chip temperature, leakage power, and generated power for flow cell arrays in order to maximize the benefits of integrating this technology with computing systems. Through thermal modeling and runtime management techniques, and by exploring the design space of emerging cooling solutions, this thesis provides significant improvements in processor energy efficiency.2018-07-09T00:00:00

Direct Cooled Ceramic Substrate for Thermal Control of Automotive Power Electronics

As electric vehicle technology develops, manufacturers would like to move toward hotter coolants for power electronic components to reduce system level costs. Thus, unique designs of inverter designs were sought to enable operation with 105°C coolant. The proposed solution in this research incorporated flow channels into the ceramic layer of the direct-bonded copper substrate typically found in power electronic packages. The focus of this research details the design and analysis of the direct cooled ceramic substrate from the perspective of its thermal performance and innovative packaging concept. The research was directed to pursue alumina as the substrate ceramic because of its low cost. Alumina, which has the lowest thermal conductivity among four materials considered, requires a larger substrate cross-sectional area to result in a viable design. Based on preliminary model parameters, two flow channel designs with larger alumina substrates were shown to meet the design goals. Experiments were conducted to characterize the pressure drop across metal foam inserts which were used to enhance the heat transfer in the flow channels. Other experiments were conducted to validate the thermal performance and model configuration. The results of thermal validation experiment showed that the assumed effective thermal conductivity of the metal foam – fluid matrix was too large. The small contact area between the metal foam inserts and ceramic substrate reduces the effective thermal conductivity. Based on the data reduction method, the model parameters were modified to produce temperature distributions that better reflected the experimental data. Simulations were updated with the modified model parameters. These models showed that the cross-sectional area of the alumina substrate had to increase further in order to adequately manage the heat load. In parallel efforts, the overall inverter package was considered. A linear manifold package resulted in the highest power density. Technical review of the inverter package raised concerns about stray inductance. Incorporating the entire inverter leg on one substrate would alleviate these losses. Future research can use the parameters determined in this work to more confidently predict the performance of direct cooled ceramic substrate designs

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed