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Application of the SEM to the measurement of solar cell parameters
Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths
Porous silicon solar cells
We developed a new process for the fabrication of crystalline solar cell, based on an ultrathin silicon membrane, taking advantage of porous silicon technology. The suggested architecture allows the costs reduction of silicon based solar cell reusing the same wafer to produce a great number of membranes. The architectures combines the efficiency of crystalline silicon solar cell, with the great absorption of porous silicon, and with a more efficient way to use the material. The new process faces the main challenge to achieve an effective and not expensive passivation of the porous silicon surface, in order to achieve an efficient photovoltaic device. At the same time the process suggests a smart way to selective doping of the macroporous silicon layers despite the through-going pores. © 2015 IEEE.
SciVal Topic Prominence
Topic: Porous silicon | Silicon | macroporous silicon
Prominence percentile: 66.984
Author keywords
nanofabricationporous siliconsilicon nanoelectronicssolar cells
Indexed keywords
Engineering controlled terms:
Crystalline materialsNanoelectronicsNanostructured materialsNanotechnologyPorous siliconSiliconSilicon wafersSolar cells
Engineering uncontrolled terms
Crystalline silicon solar cellsCrystalline solar cellsMacro porous siliconPhotovoltaic devicesPorous silicon surfacesPorous silicon technologySilicon nanoelectronicsUltrathin silicon membrane
Engineering main heading:
Silicon solar cells
ISBN: 978-146738155-0
Source Type: Conference Proceeding
Original language: English
DOI: 10.1109/NANO.2015.7388710
Document Type: Conference Paper
Sponsors: Nanotechnology Council
Publisher: Institute of Electrical and Electronics Engineers Inc.
References (9)
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1
(2012) International Technology Roadmap for Photovoltaics Results 2012. Cited 24 times.
ITRPV, Third Edition, Berlin 2012
www.ITRPV.net
2
Lehmann, V., Honlein, W., Stengl, R., Willer, J., Wendt, H.
(1992) Verfahren Zur Herstellung Einer Solarzelle Aus Einer Substratscheibe. Cited 6 times.
German patent DE4204455C1; Filing date: 29. 01.
3
Brendel, R., Ernst, M.
Macroporous Si as an absorber for thin-film solar cells
(2010) Physica Status Solidi - Rapid Research Letters, 4 (1-2), pp. 40-42. Cited 22 times.
http://www3.interscience.wiley.com/cgi-bin/fulltext/123215552/PDFSTART
doi: 10.1002/pssr.200903372
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4
Ernst, M., Brendel, R., Ferré, R., Harder, N.-P.
Thin macroporous silicon heterojunction solar cells
(2012) Physica Status Solidi - Rapid Research Letters, 6 (5), pp. 187-189. Cited 16 times.
doi: 10.1002/pssr.201206113
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5
Ernst, M., Brendel, R.
Macroporous silicon solar cells with an epitaxial emitter
(2013) IEEE Journal of Photovoltaics, 3 (2), art. no. 6472253, pp. 723-729. Cited 7 times.
doi: 10.1109/JPHOTOV.2013.2247094
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6
Ernst, M., Schulte-Huxel, H., Niepelt, R., Kajari-Schröder, S., Brendel, R.
Thin crystalline macroporous silicon solar cells with ion implanted emitter (Open Access)
(2013) Energy Procedia, 38, pp. 910-918. Cited 2 times.
http://www.sciencedirect.com/science/journal/18766102
doi: 10.1016/j.egypro.2013.07.364
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7
Nenzi, P., Kholostov, K., Crescenzi, R., Bondarenka, H., Bondarenko, V., Balucani, M.
Electrochemically etched TSV for porous silicon interposer technologies
(2013) Proceedings - Electronic Components and Technology Conference, art. no. 6575887, pp. 2201-2207. Cited 2 times.
ISBN: 978-147990233-0
doi: 10.1109/ECTC.2013.6575887
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8
Perticaroli, S., Varlamava, V., Palma, F.
Microwave sensing of nanostructured semiconductor surfaces
(2014) Applied Physics Letters, 104 (1), art. no. 013110. Cited 3 times.
doi: 10.1063/1.4861424
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9
De Cesare, G., Caputo, D., Tucci, M.
Electrical properties of ITO/crystalline-silicon contact at different deposition temperatures
(2012) IEEE Electron Device Letters, 33 (3), art. no. 6142006, pp. 327-329. Cited 28 times.
doi: 10.1109/LED.2011.2180356
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We developed a new process for the fabrication of crystalline solar cell, based on an ultrathin silicon membrane, taking advantage of porous silicon technology. The suggested architecture allows the costs reduction of silicon based solar cell reusing the same wafer to produce a great number of membranes. The architectures combines the efficiency of crystalline silicon solar cell, with the great absorption of porous silicon, and with a more efficient way to use the material. The new process faces the main challenge to achieve an effective and not expensive passivation of the porous silicon surface, in order to achieve an efficient photovoltaic device. At the same time the process suggests a smart way to selective doping of the macroporous silicon layers despite the through-going pores
Spin-Orbit induced phase-shift in BiSe Josephson junctions
The transmission of Cooper pairs between two weakly coupled superconductors
produces a superfluid current and a phase difference; the celebrated Josephson
effect. Because of time-reversal and parity symmetries, there is no Josephson
current without a phase difference between two superconductors. Reciprocally,
when those two symmetries are broken, an anomalous supercurrent can exist in
the absence of phase bias or, equivalently, an anomalous phase shift
can exist in the absence of a superfluid current. We report on the
observation of an anomalous phase shift in hybrid Josephson
junctions fabricated with the topological insulator BiSe submitted to
an in-plane magnetic field. This anomalous phase shift is observed
directly through measurements of the current-phase relationship in a Josephson
interferometer. This result provides a direct measurement of the spin-orbit
coupling strength and open new possibilities for phase-controlled Josephson
devices made from materials with strong spin-orbit coupling
Fabrication and analogue applications of nanoSQUIDs using Dayem bridge junctions
We report here recent work at the U.K. National Physical Laboratory on developing nanoscale SQUIDs using Dayem bridge Josephson junctions. The advantages are simplicity of fabrication, exceptional low-noise performance, toward the quantum limit, and a range of novel applications. Focused ion beam patterned Nb SQUID, possessing exceptionally low noise (∼200 nΦ0/Hz1/2 above 1 kHz), and operating above 4.2 K can be applied to measurement of nanoscale magnetic objects or coupled to nanoelectromechanical resonators, as well as single particle detection of photons, protons, and ions. The limited operating temperature range may be extended by exposing the Dayem bridges to carefully controlled ion beam implantation, leading to nonreversible changes in junction transition temperature.The work reported here was supported in part by the EMRP projects ‘MetNEMS’ NEW-08 and ‘BioQUART’SIB-06. The EMRP is jointly funded by the EMRP participating countries within EURAMET and the European Union
Proximity induced superconductivity by Bi in topological and films: Evidence for a robust zero energy bound state possibly due to Majorana Fermions
Point contact conductance measurements on topological and
films reveal a signature of superconductivity below 2-3 K. In
particular, critical current dips and a robust zero bias conductance peak are
observed. The latter suggests the presence of zero energy bound states which
could be assigned to Majorana Fermions in an unconventional topological
superconductor. We attribute these novel observations to proximity induced
local superconductivity in the films by small amounts of superconducting Bi
inclusions or segregation to the surface, and provide supportive evidence for
these effects.Comment: Accepted for publication in Physical Review B (Dec. 20, 2011), 15
figures. Version V1: arXiv:1111.3445v1 [cond-mat.supr-con] 15 Nov 201
Josephson supercurrent in a topological insulator without a bulk shunt
A Josephson supercurrent has been induced into the three-dimensional
topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in
Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that
the bulk conductivity can be neglected at the temperatures where we study the
proximity induced superconductivity. We prepared Josephson junctions with
widths in the order of 40 nm and lengths in the order of 50 to 80 nm on several
Bi1.5Sb0.5Te1.7Se1.3 flakes and measured down to 30 mK. The Fraunhofer patterns
unequivocally reveal that the supercurrent is a Josephson supercurrent. The
measured critical currents are reproducibly observed on different devices and
upon multiple cooldowns, and the critical current dependence on temperature as
well as magnetic field can be well explained by diffusive transport models and
geometric effects
Recommended from our members
Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures
A key feature of two-dimensional materials is that the sign and concentration of their carriers can be externally controlled with techniques such as electrostatic gating. However, conventional electrostatic gating has limitations, including a maximum carrier density set by the dielectric breakdown, and ionic liquid gating and direct chemical doping also suffer from drawbacks. Here, we show that an electron-beam-induced doping technique can be used to reversibly write high-resolution doping patterns in hexagonal boron nitride-encapsulated graphene and molybdenum disulfide (MoS2) van der Waals heterostructures. The doped MoS2 device exhibits an order of magnitude decrease of subthreshold swing compared with the device before doping, whereas the doped graphene devices demonstrate a previously inaccessible regime of high carrier concentration and high mobility, even at room temperature. We also show that the approach can be used to write high-quality p–n junctions and nanoscale doping patterns, illustrating that the technique can create nanoscale circuitry in van der Waals heterostructures
Investigating the intrinsic noise limit of Dayem bridge NanoSQUIDs
NanoSQUIDs made from Nb thin films have been produced with nanometre loop sizes down to 200 nm, using weak-link junctions with dimensions less than 60 nm. These composite (W/Nb) single layer thin film devices, patterned by FIB milling, show extremely good low-noise performance ∼170 nΦ0 at temperatures between 5 and 8.5 K and can operate in rather high magnetic fields (at least up to 1 T). The devices produced so far have a limited operating temperature range, typically only 1–2 K. We have the goal of achieving operation at 4.2 K, to be compatible with the best SQUID series array (SSA) preamplifier available. Using the SSA to readout the nanoSQUIDs provides us with a means of investigating the intrinsic noise of the former. In this paper we report improved white noise levels of these nanoSQUIDs, enabling potential detection of a single electronic spin flip in a 1-Hz bandwidth. At low frequencies the noise performance is already limited by SSA preamplifier noise
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