A Non-invasive Technique to Detect Authentic/Counterfeit SRAM Chips

Many commercially available memory chips are fabricated worldwide in untrusted facilities. Therefore, a counterfeit memory chip can easily enter into the supply chain in different formats. Deploying these counterfeit memory chips into an electronic system can severely affect security and reliability domains because of their sub-standard quality, poor performance, and shorter lifespan. Therefore, a proper solution is required to identify counterfeit memory chips before deploying them in mission-, safety-, and security-critical systems. However, a single solution to prevent counterfeiting is challenging due to the diversity of counterfeit types, sources, and refinement techniques. Besides, the chips can pass initial testing and still fail while being used in the system. Furthermore, existing solutions focus on detecting a single counterfeit type (e.g., detecting recycled memory chips). This work proposes a framework that detects major counterfeit static random-access memory (SRAM) types by attesting/identifying the origin of the manufacturer. The proposed technique generates a single signature for a manufacturer and does not require any exhaustive registration/authentication process. We validate our proposed technique using 345 SRAM chips produced by major manufacturers. The silicon results show that the test scores ($F_{1}$ score) of our proposed technique of identifying memory manufacturer and part-number are 93% and 71%, respectively.Comment: This manuscript has been submitted for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessibl

Non-invasive Techniques Towards Recovering Highly Secure Unclonable Cryptographic Keys and Detecting Counterfeit Memory Chips

Due to the ubiquitous presence of memory components in all electronic computing systems, memory-based signatures are considered low-cost alternatives to generate unique device identifiers (IDs) and cryptographic keys. On the one hand, this unique device ID can potentially be used to identify major types of device counterfeitings such as remarked, overproduced, and cloned. On the other hand, memory-based cryptographic keys are commercially used in many cryptographic applications such as securing software IP, encrypting key vault, anchoring device root of trust, and device authentication for could services. As memory components generate this signature in runtime rather than storing them in memory, an attacker cannot clone/copy the signature and reuse them in malicious activity. However, to ensure the desired level of security, signatures generated from two different memory chips should be completely random and uncorrelated from each other. Traditionally, memory-based signatures are considered unique and uncorrelated due to the random variation in the manufacturing process. Unfortunately, in previous studies, many deterministic components of the manufacturing process, such as memory architecture, layout, systematic process variation, device package, are ignored. This dissertation shows that these deterministic factors can significantly correlate two memory signatures if those two memory chips share the same manufacturing resources (i.e., manufacturing facility, specification set, design file, etc.). We demonstrate that this signature correlation can be used to detect major counterfeit types in a non-invasive and low-cost manner. Furthermore, we use this signature correlation as side-channel information to attack memory-based cryptographic keys. We validate our contribution by collecting data from several commercially available off-the-shelf (COTS) memory chips/modules and considering different usage-case scenarios

Current Air Quality Issues

Air pollution is thus far one of the key environmental issues in urban areas. Comprehensive air quality plans are required to manage air pollution for a particular area. Consequently, air should be continuously sampled, monitored, and modeled to examine different action plans. Reviews and research papers describe air pollution in five main contexts: Monitoring, Modeling, Risk Assessment, Health, and Indoor Air Pollution. The book is recommended to experts interested in health and air pollution issues

Design of Variation-Tolerant Circuits for Nanometer CMOS Technology: Circuits and Architecture Co-Design

Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime. To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages. The derived models are simple, scalable, bias dependent and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit/architecture optimization as well as technology prediction (especially in low-power and low-voltage operation). The derived models are verified using Monte Carlo SPICE simulations using industrial 90nm technology. Random variations in nanometer technologies are considered one of the largest design considerations. This is especially true for SRAM, due to the large variations in bitcell characteristics. Typically, SRAM bitcells have the smallest device sizes on a chip. Therefore, they show the largest sensitivity to different sources of variations. With the drastic increase in memory densities, lower supply voltages and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. In this research, we present a methodology for statistical simulation of SRAM read access yield, which is tightly related to SRAM performance and power consumption. The proposed flow accounts for the impact of bitcell read current variation, sense amplifier offset distribution, timing window variation and leakage variation on functional yield. The methodology overcomes the pessimism existing in conventional worst-case design techniques that are used in SRAM design. The proposed statistical yield estimation methodology allows early yield prediction in the design cycle, which can be used to trade off performance and power requirements for SRAM. The methodology is verified using measured silicon yield data from a 1Mb memory fabricated in an industrial 45nm technology. Embedded SRAM dominates modern SoCs and there is a strong demand for SRAM with lower power consumption while achieving high performance and high density. However, in the presence of large process variations, SRAMs are expected to consume larger power to ensure correct read operation and meet yield targets. We propose a new architecture that significantly reduces array switching power for SRAM. The proposed architecture combines built-in self-test (BIST) and digitally controlled delay elements to reduce the wordline pulse width for memories while ensuring correct read operation; hence, reducing switching power. A new statistical simulation flow was developed to evaluate the power savings for the proposed architecture. Monte Carlo simulations using a 1Mb SRAM macro from an industrial 45nm technology was used to examine the power reduction achieved by the system. The proposed architecture can reduce the array switching power significantly and shows large power saving - especially as the chip level memory density increases. For a 48Mb memory density, a 27% reduction in array switching power can be achieved for a read access yield target of 95%. In addition, the proposed system can provide larger power saving as process variations increase, which makes it a very attractive solution for 45nm and below technologies. In addition to its impact on bitcell read current, the increase of local variations in nanometer technologies strongly affect SRAM cell stability. In this research, we propose a novel single supply voltage read assist technique to improve SRAM static noise margin (SNM). The proposed technique allows precharging different parts of the bitlines to VDD and GND and uses charge sharing to precisely control the bitline voltage, which improves the bitcell stability. In addition to improving SNM, the proposed technique also reduces memory access time. Moreover, it only requires one supply voltage, hence, eliminates the need of large area voltage shifters. The proposed technique has been implemented in the design of a 512kb memory fabricated in 45nm technology. Results show improvements in SNM and read operation window which confirms the effectiveness and robustness of this technique

Sub-10nm Transistors for Low Power Computing: Tunnel FETs and Negative Capacitance FETs

One of the major roadblocks in the continued scaling of standard CMOS technology is its alarmingly high leakage power consumption. Although circuit and system level methods can be employed to reduce power, the fundamental limit in the overall energy efficiency of a system is still rooted in the MOSFET operating principle: an injection of thermally distributed carriers, which does not allow subthreshold swing (SS) lower than 60mV/dec at room temperature. Recently, a new class of steep-slope devices like Tunnel FETs (TFETs) and Negative-Capacitance FETs (NCFETs) have garnered intense interest due to their ability to surpass the 60mV/dec limit on SS at room temperature. The focus of this research is on the simulation and design of TFETs and NCFETs for ultra-low power logic and memory applications. Using full band quantum mechanical model within the Non-Equilibrium Greens Function (NEGF) formalism, source-underlapping has been proposed as an effective technique to lower the SS in GaSb-InAs TFETs. Band-tail states, associated with heavy source doping, are shown to significantly degrade the SS in TFETs from their ideal value. To solve this problem, undoped source GaSb-InAs TFET in an i-i-n configuration is proposed. A detailed circuit-to-system level evaluation is performed to investigate the circuit level metrics of the proposed devices. To demonstrate their potential in a memory application, a 4T gain cell (GC) is proposed, which utilizes the low-leakage and enhanced drain capacitance of TFETs to realize a robust and long retention time GC embedded-DRAMs. The device/circuit/system level evaluation of proposed TFETs demonstrates their potential for low power digital applications. The second part of the thesis focuses on the design space exploration of hysteresis-free Negative Capacitance FETs (NCFETs). A cross-architecture analysis using HfZrOx ferroelectric (FE-HZO) integrated on bulk MOSFET, fully-depleted SOI-FETs, and sub-10nm FinFETs shows that FDSOI and FinFET configurations greatly benefit the NCFET performance due to their undoped body and improved gate-control which enables better capacitance matching with the ferroelectric. A low voltage NC-FinFET operating down to 0.25V is predicted using ultra-thin 3nm FE-HZO. Next, we propose one-transistor ferroelectric NOR type (Fe-NOR) non-volatile memory based on HfZrOx ferroelectric FETs (FeFETs). The enhanced drain-channel coupling in ultrashort channel FeFETs is utilized to dynamically modulate memory window of storage cells thereby resulting in simple erase-, program-and read-operations. The simulation analysis predicts sub-1V program/erase voltages in the proposed Fe-NOR memory array and therefore presents a significantly lower power alternative to conventional FeRAM and NOR flash memories

NASA Tech Briefs, July 1993

Topics include: Data Acquisition and Analysis: Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery; Fabrication Technology; Mathematics and Information Sciences; Life Sciences

Innovative Techniques for Testing and Diagnosing SoCs

We rely upon the continued functioning of many electronic devices for our everyday welfare, usually embedding integrated circuits that are becoming even cheaper and smaller with improved features. Nowadays, microelectronics can integrate a working computer with CPU, memories, and even GPUs on a single die, namely System-On-Chip (SoC). SoCs are also employed on automotive safety-critical applications, but need to be tested thoroughly to comply with reliability standards, in particular the ISO26262 functional safety for road vehicles. The goal of this PhD. thesis is to improve SoC reliability by proposing innovative techniques for testing and diagnosing its internal modules: CPUs, memories, peripherals, and GPUs. The proposed approaches in the sequence appearing in this thesis are described as follows: 1. Embedded Memory Diagnosis: Memories are dense and complex circuits which are susceptible to design and manufacturing errors. Hence, it is important to understand the fault occurrence in the memory array. In practice, the logical and physical array representation differs due to an optimized design which adds enhancements to the device, namely scrambling. This part proposes an accurate memory diagnosis by showing the efforts of a software tool able to analyze test results, unscramble the memory array, map failing syndromes to cell locations, elaborate cumulative analysis, and elaborate a final fault model hypothesis. Several SRAM memory failing syndromes were analyzed as case studies gathered on an industrial automotive 32-bit SoC developed by STMicroelectronics. The tool displayed defects virtually, and results were confirmed by real photos taken from a microscope. 2. Functional Test Pattern Generation: The key for a successful test is the pattern applied to the device. They can be structural or functional; the former usually benefits from embedded test modules targeting manufacturing errors and is only effective before shipping the component to the client. The latter, on the other hand, can be applied during mission minimally impacting on performance but is penalized due to high generation time. However, functional test patterns may benefit for having different goals in functional mission mode. Part III of this PhD thesis proposes three different functional test pattern generation methods for CPU cores embedded in SoCs, targeting different test purposes, described as follows: a. Functional Stress Patterns: Are suitable for optimizing functional stress during I Operational-life Tests and Burn-in Screening for an optimal device reliability characterization b. Functional Power Hungry Patterns: Are suitable for determining functional peak power for strictly limiting the power of structural patterns during manufacturing tests, thus reducing premature device over-kill while delivering high test coverage c. Software-Based Self-Test Patterns: Combines the potentiality of structural patterns with functional ones, allowing its execution periodically during mission. In addition, an external hardware communicating with a devised SBST was proposed. It helps increasing in 3% the fault coverage by testing critical Hardly Functionally Testable Faults not covered by conventional SBST patterns. An automatic functional test pattern generation exploiting an evolutionary algorithm maximizing metrics related to stress, power, and fault coverage was employed in the above-mentioned approaches to quickly generate the desired patterns. The approaches were evaluated on two industrial cases developed by STMicroelectronics; 8051-based and a 32-bit Power Architecture SoCs. Results show that generation time was reduced upto 75% in comparison to older methodologies while increasing significantly the desired metrics. 3. Fault Injection in GPGPU: Fault injection mechanisms in semiconductor devices are suitable for generating structural patterns, testing and activating mitigation techniques, and validating robust hardware and software applications. GPGPUs are known for fast parallel computation used in high performance computing and advanced driver assistance where reliability is the key point. Moreover, GPGPU manufacturers do not provide design description code due to content secrecy. Therefore, commercial fault injectors using the GPGPU model is unfeasible, making radiation tests the only resource available, but are costly. In the last part of this thesis, we propose a software implemented fault injector able to inject bit-flip in memory elements of a real GPGPU. It exploits a software debugger tool and combines the C-CUDA grammar to wisely determine fault spots and apply bit-flip operations in program variables. The goal is to validate robust parallel algorithms by studying fault propagation or activating redundancy mechanisms they possibly embed. The effectiveness of the tool was evaluated on two robust applications: redundant parallel matrix multiplication and floating point Fast Fourier Transform

Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre

Single event effects have been an issue in microelectronic devices and circuits for some time, especially those used in radiation-intense environments such as space. Traditionally, devices have been tested using particle accelerator facilities for evaluation of the various single event effects phenomena. However, testing at these facilities can be prohibitive to many research groups due to costs and time availability. As a result, pulsed laser testing has evolved to become a standard, additional testing methodology for evaluating single event effects. Not only do pulsed laser facilities generally offer more flexibility in terms of cost, but it is also possible to gain additional information about the spatial and temporal nature of single event effect generation in sensitive areas of a device. To meet the needs of the radiation effects community, pulsed laser facilities have continued to be set up around the world. One of these includes the facility at the Saskatchewan Structural Sciences Centre. An earlier iteration of the facility previously existed which utilized a different equipment set and did not have the two photon absorption capabilities that the current version does. In this thesis, a sample of the work performed at the facility using both the single and two photon absorption capabilities are provided to demonstrate its capabilities; the devices tested for single event effect response included two Hall effect sensors and a Xilinx Virtex-5 FPGA. Additionally, a description of the main features of the facility in its current form is given. Through this work, the feasibility of the facility to provide results to users, both academic and industrial, is demonstrated

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems