Application of Radiation Technologies for Quality Improvement of LEDs Based upon AlGaAs

The investigation results of the radiation resistance and reliability of light-emitting diodes (LEDs) based upon AlGaAs are presented. The radiation model and the reliability model are described for LEDs. Preliminary irradiation by gamma-quanta and fast neutrons makes it possible to improve the radiation resistance and reliability of the LEDs during further operation. Based on the developed models, radiation technologies are proposed, and the use of which allows increasing the service properties of the LEDs. The suggested technologies can be used for other types of semiconductor devices

Main principles of developing exploitation models of semiconductor devices

The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IRLEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties

Main principles of developing exploitation models of semiconductor devices

The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IRLEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties

Система оборотного водоснабжения на ОСП "Юргинский ферросплавный завод"

В статье даётся характеристика системы оборотного водоснабжения ОСП «Юргинский ферросплавный завод» АО "Кузнецкие ферросплавы". Охарактеризованы причины аварий на водоводах, приведены способы борьбы с гидравлическими ударами.The article describes the system of circulating water supply of the OSP "Yurginsky Ferroalloy Plant" of JSC "Kuznetsk Ferroalloys". The causes of accidents on water pipelines are characterized, and methods of dealing with hydraulic shocks are given

Понятие пожарного риска и уровня пожарной опасности

В статье описываются понятие пожарного риска и уровня пожарной опасности. Рассматривается оценка и расчет пожарного риска, который выявляет фактический уровень возможной опасности в случае возникновения возгорания. При расчёте пожарного риска либо его оценке определяется уровень эффективности мер пожарной безопасности, а также возможные последствия пожара для безопасности людей и имущества. Результаты оценки и расчета пожарного риска позволяют своевременно предпринять действия для усиления защитных мер и повышения уровня безопасности.The article describes the concept of fire risk and the level of fire danger. The article considers the assessment and calculation of fire risk, which reveals the actual level of possible danger in the event of a fire. When calculating the fire risk or evaluating it, the level of effectiveness of fire safety measures is determined, as well as the possible consequences of a fire for the safety of people and property. The results of the fire risk assessment and calculation allow timely actions to be taken to strengthen protective measures and increase the level of safety

Effects of 30 MEV electron irradation on InGaAsp LEDS and InGaAs photodiodes.

http://archive.org/details/effectsof30mevel00ore

1996 Laboratory directed research and development annual report

This report summarizes progress from the Laboratory Directed Research and Development (LDRD) program during fiscal year 1996. In addition to a programmatic and financial overview, the report includes progress reports from 259 individual R&D projects in seventeen categories. The general areas of research include: engineered processes and materials; computational and information sciences; microelectronics and photonics; engineering sciences; pulsed power; advanced manufacturing technologies; biomedical engineering; energy and environmental science and technology; advanced information technologies; counterproliferation; advanced transportation; national security technology; electronics technologies; idea exploration and exploitation; production; and science at the interfaces - engineering with atoms