Design And Analysis Of Cmos Based Rfic Bandpass Filter (BPF) For 1.9GHz Range For CDMA Applications

The rapid development of wireless applications has created a demand for low-cost, compact, low-power hardware solutions. This demand has driven efforts to realize fully integrated, “single-chip” solution systems. While substantial progress had been made in the integration of many RF and baseband processing elements through the development of new technologies and refinements of existing technologies, progress in the area of fully integrated filters has been limited due to the losses (low Q) associated with integrated passive elements in standard IC process. The work in this report focuses on the design and analysis of CMOS based RFIC bandpass filter for center frequency of 1.90Hz. The entire design and analysis of the filter circuit have been carried out by ultilizing Cadence IC Design Tools (version 5.033). This report present a methodology for designing a Q-enhanced bandpass filter with active negative resistance generator circuitry to compensate for the filter losses due to the low quality factor of monolithic spiral inductors. The first phase of this work focus on the design and simulation of an ideal, fully integrated second order Butterworth bandpass filter (with -3dB bandwidth of 200MHz centered at 1.9GHz, corrensponding to the CDMA2000 Standard) ultilizing Cadence IC Design Tools with Silterra 0.18um Design Kit. The ideal bandpass filter which based on the paper work calculation is first constructed by using Silterra SMCMOS ideal component and the simulation results are observed. The ideal circuit is then simulated by using Silterra RF component (which include all parasitic effects) to show the actual filter performance. In the second phase of this work, a FET-based active negative resistance circuit is developed and being added into the bandpass filter circuitry to compensate the filter loss. With features of Cadence IC Design Tools, the filter is analyzed and optimized to obtain the best response. The best filter design achieves ≈ 0dB of passband gain or insertion loss while consuming 8.8mA of current from a ± 1.8V source (31.69mW). The filter provides more than 10dB of rejection at 1.5GHz and 2.5GHz. In the filter passband, the noise figure is 5.25dB and input return loss is -20dB. The filter response only suffered a minor frequency shift for a wide range of operating temperature. The bandpass filter has potential application as RF filters in CMOS integrated transceiver designs

An Extremely Miniaturized Two-stage Bandpass

Bandpass filters are key components in RF/microwave communication systems. As the system goes smaller and lighter, size reduction becomes more and more important. In addition, impedance matching and high performance is also crucial to a communication system. Thus, a two-stage bandpass filter with both small size and automatically matching is more desirable. In this thesis, a novel miniaturized CMOS bandpass filter will be introduced. It is based on the structure of diagonally short-ended coupled line with loaded capacitors for size reduction and using multilayer conductors for high quality factor. In this structure, the ground plane is capsulated around the filter, which enables it avoid the coupling to other basic components in the transceiver system. In addition, as another major advantage, it was proven to have an impedance matching automatically. The greater difference between the simulation and measurement in CMOS fabrication is also analysed and it will be proven to be caused by transmission losses and quality factors in the lossy distributed inductor of shunt resonator. Design equations and method will be fully explained in this thesis. A lot of simulated results and measured results are also presented. The method of enhancing the performance of the bandpass filters and automatically impedance matching will be described. Four kinds of circuits which based on the MagnaChip 0.18μm process are fabricated. Many simulated and measured data are collected and provided here to show the advantages of the proposed bandpass filter.Contents Nomenclature List of Figures Abstract CHAPTER 1 Introduction 1.1 An introduction to the filters at present 1.2 Organization of the thesis CHAPTER 2 The Bandpass Filter Design Theory 2.1 Size reduction method 2.2 The two-stage filter 2.3 The inter-stage signal line enhancement method CHAPTER 3 The Simulation , fabrication and results analysis 3.1 The inter-stage signal line improvement 3.2 Simulation and fabrication 3.3 The quality factor effect on the resonance frequency shift CHAPTER 4 Conclusion References Acknowledgemen

Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits

© 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).Peer reviewe

A Differential 4-Path Highly Linear Widely Tunable On-Chip Band-Pass Filter

A passive switched capacitor RF band-pass filter with clock controlled center frequency is realized in 65nm CMOS. An off-chip transformer which acts as a balun, improves filter-Q and realizes impedance matching. The differential architecture reduces clock-leakage and suppresses selectivity around even harmonics of the clock. The filter has a constant -3dB bandwidth of 35MHz and can be tuned from 100MHz up to 1GHz. IIP3 is better than 19dBm, P1dB=2dBm and NF<;5.5dB at Pdiss=2mW to 16mW.\u

Analysis of Internally Bandlimited Multistage Cubic-Term Generators for RF Receivers

Adaptive feedforward error cancellation applied to correct distortion arising from third-order nonlinearities in RF receivers requires low-noise low-power reference cubic nonidealities. Multistage cubic-term generators utilizing cascaded nonlinear operations are ideal in this regard, but the frequency response of the interstage circuitry can introduce errors into the cubing operation. In this paper, an overview of the use of cubic-term generators in receivers relative to other applications is presented. An interstage frequency response plan is presented for a receiver cubic-term generator and is shown to function for arbitrary three-signal third-order intermodulation generation. The noise of such circuits is also considered and is shown to depend on the total incoming signal power across a particular frequency band. Finally, the effects of the interstage group delay are quantified in the context of a relevant communication standard requirement

Photonic RF and microwave reconfigurable filters and true time delays based on an integrated optical Kerr frequency comb source

We demonstrate advanced transversal radio frequency (RF) and microwave functions based on a Kerr optical comb source generated by an integrated micro-ring resonator. We achieve extremely high performance for an optical true time delay aimed at tunable phased array antenna applications, as well as reconfigurable microwave photonic filters. Our results agree well with theory. We show that our true time delay would yield a phased array antenna with features that include high angular resolution and a wide range of beam steering angles, while the microwave photonic filters feature high Q factors, wideband tunability, and highly reconfigurable filtering shapes. These results show that our approach is a competitive solution to implementing reconfigurable, high performance and potentially low cost RF and microwaveComment: 15 pages, 11 Figures, 60 Reference

Compact Millimeter-Wave Bandpass Filters Using Quasi-Lumped Elements in 0.13-um (Bi)-CMOS Technology for 5G Wireless Systems

© 2019 IEEE.A design methodology for a compact millimeter-wave on-chip bandpass filter (BPF) is presented in this paper. Unlike the previously published works in the literature, the presented method is based on quasi-lumped elements, which consists of a resonator with enhanced self-coupling and metal-insulator-metal capacitors. Thus, this approach provides inherently compact designs comparing with the conventional distributed elements-based ones. To fully understand the insight of the approach, simplified LC-equivalent circuit models are developed. To further demonstrate the feasibility of using this approach in practice, the resonator and two compact BPFs are designed using the presented models. All three designs are fabricated in a standard 0.13- \mu \text{m} (Bi)-CMOS technology. The measured results show that the resonator can generate a notch at 47 GHz with the attenuation better than 28 dB due to the enhanced self-coupling. The chip size, excluding the pads, is only 0.096 \times 0.294 mm 2. In addition, using the resonator for BPF designs, the first BPF has one transmission zero at 58 GHz with a peak attenuation of 23 dB. The center frequency of this filter is 27 GHz with an insertion loss of 2.5 dB, while the return loss is better than 10 dB from 26 to 31 GHz. The second BPF has two transmission zeros, and a minimum insertion loss of 3.5 dB is found at 29 GHz, while the return loss is better than 10 dB from 26 GHz to 34 GHz. Also, more than 20-dB stopband attenuation is achieved from dc to 20.5 GHz and from 48 to 67 GHz. The chip sizes of these two BPFs, excluding the pads, are only 0.076\times 0.296 mm 2 and 0.096\times 0.296 mm 2, respectively.Peer reviewe

Tunable n-path notch filters for blocker suppression: modeling and verification

N-path switched-RC circuits can realize filters with very high linearity and compression point while they are tunable by a clock frequency. In this paper, both differential and single-ended N-path notch filters are modeled and analyzed. Closed-form equations provide design equations for the main filtering characteristics and nonidealities such as: harmonic mixing, switch resistance, mismatch and phase imbalance, clock rise and fall times, noise, and insertion loss. Both an eight-path single-ended and differential notch filter are implemented in 65-nm CMOS technology. The notch center frequency, which is determined by the switching frequency, is tunable from 0.1 to 1.2 GHz. In a 50- environment, the N-path filters provide power matching in the passband with an insertion loss of 1.4–2.8 dB. The rejection at the notch frequency is 21–24 dB,P1 db> + 2 dBm, and IIP3 > + 17 dBm

Design and characterization of a low voltage CMOS ASIC for medical instrumentation

The acquisition of biomedical signals requires analogue to digital converters of high resolution, low voltage of power and low consumption. The solution for this need is the use of new sigma delta conversion architectures such as the one tested in this Bachelor Thesis. This work covers the design of the instrumentation necessary for the operation of Application-Specific Integrated Circuit Sigma Delta Analog-to-Digital Converter (ASIC ADC) that is already manufactured and its integration into a Printed Circuit Board (PCB). It also includes the development of the necessary software that facilitates the accomplishment of the necessary tests and the analysis of the data that will allow to characterize the operation of the fabricated prototype. Finally, the results and conclusions of the project will be described. The ASIC to be tested in this Bachelor Thesis consists of a180-nm Complementary Metal-Oxide Semiconductor (CMOS) bandpass ADC developed to fulfil the specifications of a fully-integrated receiver for Magnetic Resonance Imaging (MRI). Integrating an integrated CMOS receiver into a single chip will help improve image quality by avoiding the use of many coaxial cables that are used to connect the Radio Frequency (RF) coils to the scanning hardware. The proposal made is a very simple Low-IF receiver characteristics in which a continuous time Low-IF bandpass ADC is the most efficient architecture. The circuit in continuous time replaces the classic filter only thus, an anti-alias filter would be necessary. In addition, the bandpass filter assists in the attenuation of the quantization noise in the bandwidth of interest, while at the same time the stability of the system is easily achieved due to the selected Low-IF.Ingeniería Biomédic