Three dimensional magnetic field sensors and array in BiCMOS technology

This thesis presents new designs of three dimensional magnetic field sensors in BiCMOS technology. The detailed design of the merged structure device by common diffusion and the high gain transduction circuit are presented. The merged structure has the advantage of less area, less external contacts and less parasitic capacitance. Cross-sensitivity is also eliminated by employing the merged structure. Three active on-chip loads are introduced to improve the sensitivity. The SPICE simulation results show that when a relative change in current ΔI/I is 0.001, about 13.6 mV and 8.5mV can be detected at the output in X(or Y) and Z directions, respectively. The experimental results from a standard (non-merged) BiCMOS magnetic sensor is presented. The 3-D sensor element has been integrated with the signal processing circuits to build a monolithic 8 x 8 sensor array. The detailed SPICE simulation results on the critical path shows the array can be operated with elimination of column-to-column offset voltages under a maximum scanning clock speed of about 0.5MHz. The array structure can find application in precise manufacturing as a position sensor

Мультифункціональний сенсор на інтегральній магнітотранзисторній структурі

Представлені нові підходи реалізації мультифункціонального сенсора на основі інтегральної структури латерального магнітотранзистора. Сенсор забезпечує вимірювання трьох параметрів – двох ортогональних проекцій вектора індукції магнітного поля та температури. Інформативними сигналами параметрів магнітного поля є різницева та сумарна складова колекторних струмів магнітотранзистора, а температури – падіння напруги на прямо-зміщеному колекторному p-n переході в інверсному режимі живлення.The work gives new approaches to implementation of a multifunctional sensor based on the lateral magnetotransistor’s integral structure. The sensor provides measurement of three parameters – two orthogonal magnetic-field vector’s projections and temperature. The informative signals of the magnetic field parameters are the differential and summed collector currents of a magnetotransistor whereas the temperature informative signal is the voltage drop on the forward-biased collector p-n-junction in reverse operation mode

High-sensitivity field emission magnetometers and other applications of field emission technologies.

The feasibility and development of a field emission based anisotropic vector magnetometer is presented. Within this scope current magnetic sensing technology is investigated and compared. The advantages of, and need for, a field emission based magnetic sensor are then discussed. Background theory, simulation, fabrication, testing, and future developments of field emission magnetometers are presented. The possible applications of field emission to other technologies are also investigated. The magnetic sensing device presented uses a sharp field emitting tip with a radius of the order of 100nm which is fabricated using standard silicon processing techniques on highly n-doped silicon. Under a vacuum level of 10"6 mBar and at room temperature, a potential applied to a surrounding gate electrode extracts from this tip a beam of electrons which is incident upon two separate anode electrodes. In the absence of an external magnetic field the electron current incident on each of these two electrodes is equal, while in the presence of a magnetic field the Lorenz force skews the beam towards one of the electrodes, resulting in a differential current which is proportional to the magnetic field

Високостабільний гальваномагнітний сенсор з часовим перетворенням на комутованих конденсаторах

The article concerns the new construction principles and circuitry of galvanomagnetic sensors with time conversion. The objective of the research is to stabilize modes of a signal transducer of the sensor of magnetic field based on the lateral double-collector magnetic transistor. The usage of the circuitry on the switching capacitors in the signal transducer of the sensor devices on the magnetic transistors has the particular relevance - unlike other galvanomagnetic transducers, including Hall sensors, the informative signals of magnetic transistors are not potential, but current circles. Thus, the replacement of the traditional resistive load of the collector circles of the magnetic transistors on the capacitors allows the realization of the time method of the measuring conversion. The informative value of the measuring conversion is duration of time, during which voltage on the load capacitors of the collector circles of the magnetic transistors reaches a given threshold level. A counter, controlled by a comparator of voltage level, forms a digital code, which counts the number of the clock pulses, during which the capacitor is being charged. The main result is the new circuit solution of the high stable magnetic transistor sensor with time transformation on the switching capacitors, which stabilizes the operation of the device at the voltage drift. The hardware-software complex for the adjustment and examination of stability of the measuring transducer was designed. The results can be used in the magnetic field sensors that meet the requirements of the modern low-voltage energy efficient electronicsПредставлены новые подходы стабилизации режимов работы гальваномагнитных преобразователей устройств измерения магнитного поля на интегральных структурах латеральных магнитотранзисторов. Основными результатами работы есть схемные решения микропроцессорных сигнальных преобразователей временного типа на коммутированных конденсаторах в коллекторных цепях магнитотранзистораПредставлені нові підходи стабілізації режимів роботи гальваномагнітних перетворювачів пристроїв вимірювання магнітного поля на інтегральних структурах латеральних магнітотранзисторів. Основними результатами роботи є схемні рішення мікропроцесорних сигнальних перетворювачів часового типу на комутованих конденсаторах в колекторних колах магнітотранзистор

Three Dimensional Nanowire Array Piezo-phototronic and Piezo-photo-magnetotronic Sensors

Piezotronic and piezo-phototronic is a burgeoning field of study which emerges from the coupling of intrinsic materials properties exhibited by non-centrosymmetric semiconductors. In the past decade research efforts were mainly focused on the wurtzite family of 1D nanostructures, with major emphasis on ZnO nanowire nanogenerators, MS piezotronic transistors, LEDs and photodetectors mainly integrated on single nanowires. In view of previously known advantages of charge carrier separation in radial heterojunctions, particularly in type-II core/shell nanowires, it can be anticipated that the performance of photosensing devices can be largely enhanced by piezo-phototronic effect. Moreover, the performance metrics can be further improved in an array of nanowires where geometrical feature enabled multiple reflection can efficiently trap incident illumination. The crux of this dissertation lies in the development of 3D type-II core/shell nanowire array based piezo-phototronic device and also to investigate the effect of magnetic field on ZnO nanowire arrays based piezotronic and piezo-phototronic device for new class of sensors. In this regard, prototype piezo-phototronic broadband photodetectors integrated on two material systems, namely type-II CdSe/ZnTe 3D core/shell nanowire arrays and fully wide band gap type-II ZnO/ZnS 3D core/shell nanowire arrays have been developed where the photodetection performance of each device exhibits high sensitivity, fast response and large responsivity. The application of piezo-phototronic effect further improves the device performance by three to four orders of magnitude change numerically calculated from absolute responsivities at multiple wavelengths. A 3D ZnO nanowire array based new class of piezo-photo-magnetotronic sensor is also developed for detection of pressure, illumination and magnetic field suggesting multiple functionality of a single device where more than one effect can be coupled together to exhibit piezo-magnetotronic or piezo-photo-magnetotronic type of device behavior

Three Dimensional Nanowire Array Piezo-phototronic and Piezo-photo-magnetotronic Sensors

Piezotronic and piezo-phototronic is a burgeoning field of study which emerges from the coupling of intrinsic materials properties exhibited by non-centrosymmetric semiconductors. In the past decade research efforts were mainly focused on the wurtzite family of 1D nanostructures, with major emphasis on ZnO nanowire nanogenerators, MS piezotronic transistors, LEDs and photodetectors mainly integrated on single nanowires. In view of previously known advantages of charge carrier separation in radial heterojunctions, particularly in type-II core/shell nanowires, it can be anticipated that the performance of photosensing devices can be largely enhanced by piezo-phototronic effect. Moreover, the performance metrics can be further improved in an array of nanowires where geometrical feature enabled multiple reflection can efficiently trap incident illumination. The crux of this dissertation lies in the development of 3D type-II core/shell nanowire array based piezo-phototronic device and also to investigate the effect of magnetic field on ZnO nanowire arrays based piezotronic and piezo-phototronic device for new class of sensors. In this regard, prototype piezo-phototronic broadband photodetectors integrated on two material systems, namely type-II CdSe/ZnTe 3D core/shell nanowire arrays and fully wide band gap type-II ZnO/ZnS 3D core/shell nanowire arrays have been developed where the photodetection performance of each device exhibits high sensitivity, fast response and large responsivity. The application of piezo-phototronic effect further improves the device performance by three to four orders of magnitude change numerically calculated from absolute responsivities at multiple wavelengths. A 3D ZnO nanowire array based new class of piezo-photo-magnetotronic sensor is also developed for detection of pressure, illumination and magnetic field suggesting multiple functionality of a single device where more than one effect can be coupled together to exhibit piezo-magnetotronic or piezo-photo-magnetotronic type of device behavior

EUROSENSORS XVII : book of abstracts

Fundação Calouste Gulbenkien (FCG).Fundação para a Ciência e a Tecnologia (FCT)

Research and Development of Super Permeability NiFe/Cu Composite Wires for Micro Magnetic Sensors

Ph.DDOCTOR OF PHILOSOPH

Прикладна фізика : українсько-російсько-англійський тлумачний словник. У 4 т. Т. 2. З – Н

Словник охоплює близько 30 тис. термінів з прикладної фізики і дотичних до неї галузей знань та їх тлумачення трьома мовами (українською, російською та англійською). Багато термінів і визначень, наведених у словнику, якими послуговуються у відповідній галузі знань, досі не входили до жодного зі спеціалізованих словників. Словник призначений для викладачів, науковців, інженерів, аспірантів, студентів вищих навчальних закладів, перекладачів з природничих і технічних дисциплін