Gold-induced nanowires on the Ge(100) surface yield a 2D, and not a 1D electronic structure

Atomic nanowires on semiconductor surfaces induced by the adsorption of metallic atoms have attracted a lot of attention as possible hosts of the elusive, Tomonaga-Luttinger liquid. The Au/Ge(100) system in particular is the subject of controversy as to whether the Au-induced nanowires do indeed host exotic, 1D metallic states. We report on a thorough study of the electronic properties of high quality nanowires formed at the Au/Ge(100) surface. High resolution ARPES data show the low-lying Au-induced electronic states to possess a dispersion relation that depends on two orthogonal directions in k-space. Comparison of the E(k$_x$,k$_y$) surface measured using ARPES to tight-binding calculations yields hopping parameters in the two different directions that differ by a factor of two. We find that the larger of the two hopping parameters corresponds, in fact, to the direction perpendicular to the nanowires (t$_{\perp}$). This, the topology of the $E$=$E_F$ contour in k$_{\||}$, and the fact that $t_{\||}$/$t_{\perp}\sim 0.5$ proves that the Au-induced electron pockets possess a 2D, closed Fermi surface, this firmly places the Au/Ge(100) nanowire system outside being a potential hosts of a Tomonaga-Luttinger liquid. We combine these ARPES data with STS measurements of the spatially-resolved electronic structure and find that the spatially straight conduction channels observed up to energies of order one electron volt below the Fermi level do not originate from the Au-induced states seen in the ARPES data. The former are more likely to be associated with bulk Ge states that are localized to the subsurface region. Despite our proof of the 2D nature of the Au-induced nanowire and sub-surface Ge-related states, an anomalous suppression of the density of states at the Fermi level is observed in both the STS and ARPES data, this phenomenon is discussed in the light of the effects of disorder.Comment: 17 pages, 8 figure

Memristors for the Curious Outsiders

We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their connection to machine learning and neural computation.Comment: Perpective paper for MDPI Technologies; 43 page

Appropriate methods to analyse power conversion harmonics

Nowadays, non-linear loads represent the majority of the residential electrical consumers. The limits on emission and immunity are imposed by IEC- standards, however there is a lack in the domain 2 – 150 kHz. Where power quality standards focus on the current, EMC standards use voltage limits. An appropriate method for measuring high frequency grid disturbances is explored. Measurement techniques described by the existing standards for power quality and EMC are investigated. The aim of this work is to find a robust measurement method for the considered frequency range 2 - 150 kHz. Experimental results are presented in order to validate the analyzed methods

Reactive control and reasoning assistance for scientific laboratory instruments

Scientific laboratory instruments that are involved in chemical or physical sample identification frequently require substantial human preparation, attention, and interactive control during their operation. Successful real-time analysis of incoming data that supports such interactive control requires: (1) a clear recognition of variance of the data from expected results; and (2) rapid diagnosis of possible alternative hypotheses which might explain the variance. Such analysis then aids in decisions about modifying the experiment protocol, as well as being a goal itself. This paper reports on a collaborative project at the NASA Ames Research Center between artificial intelligence researchers and planetary microbial ecologists. Our team is currently engaged in developing software that autonomously controls science laboratory instruments and that provides data analysis of the real-time data in support of dynamic refinement of the experiment control. the first two instruments to which this technology has been applied are a differential thermal analyzer (DTA) and a gas chromatograph (GC). coupled together, they form a new geochemicstry and microbial analysis tool that is capable of rapid identification of the organiz and mineralogical constituents in soils. The thermal decomposition of the minerals and organics, and the attendance release of evolved gases, provides data about the structural and molecular chemistry of the soil samples

Design of a fast computer-based partial discharge diagnostic system

Partial discharges cause progressive deterioration of insulating materials working in high voltage conditions and may lead ultimately to insulator failure. Experimental findings indicate that deterioration increases with the number of discharges and is consequently proportional to the magnitude and frequency of the applied voltage. In order to obtain a better understanding of the mechanisms of deterioration produced by partial discharges, instrumentation capable of individual pulse resolution is required. A new computer-based partial discharge detection system was designed and constructed to conduct long duration tests on sample capacitors. This system is capable of recording large number of pulses without dead time and producing valuable information related to amplitude, polarity, and charge content of the discharges. The operation of the system is automatic and no human supervision is required during the testing stage. Ceramic capacitors were tested at high voltage in long duration tests. The obtained results indicated that the charge content of partial discharges shift towards high levels of charge as the level of deterioration in the capacitor increases